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公开(公告)号：US4618844A
公开(公告)日：1986-10-21
申请号：US494075
申请日：1983-05-12
CPC分类号： G01L9/0054
摘要： In a semiconductor pressure transducer in accordance with the present invention, an oxide film is formed on a semiconductor base having a strain gauge resistor element for the purpose of protecting the strain gauge resistor element. Over the oxide film, a conductive metal film is formed which does not overlap with the strain gauge resistor element through said oxide film.
摘要翻译： 在根据本发明的半导体压力传感器中，为了保护应变计电阻元件，在具有应变计电阻元件的半导体基底上形成氧化膜。 在氧化物膜上形成导电金属膜，其不通过所述氧化膜与应变计电阻元件重叠。
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公开(公告)号：US4454771A
公开(公告)日：1984-06-19
申请号：US318361
申请日：1981-11-05
IPC分类号： G01L1/18
CPC分类号： G01L1/18
摘要： A load cell comprises a semiconductor diaphragm which includes an outer flange portion, a central rigid portion having a smaller thickness than the outer flange portion and a thin resilient portion provided between the outer flange portion and the central rigid portion. At least two piezo-resistors constituting at least part of a bridge circuit are formed in the resilient portion. The load cell further comprises a first glass block secured to the central rigid portion, and a second glass block for securing the outer flange portion. A load is applied to the semiconductor diaphragm through the first glass block, wherein measurement of the applied load is effected by detecting variation in resistance of the resistor bridge circuit.
摘要翻译： 测力传感器包括半导体膜片，其包括外凸缘部分，具有比外凸缘部分更小的厚度的中心刚性部分和设置在外凸缘部分和中心刚性部分之间的薄弹性部分。 构成桥接电路的至少一部分的至少两个压电电阻形成在弹性部分中。 测力传感器还包括固定到中心刚性部分的第一玻璃块和用于固定外凸缘部分的第二玻璃块。 通过第一玻璃块将负载施加到半导体膜片，其中通过检测电阻器桥接电路的电阻的变化来实现所施加的负载的测量。
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公开(公告)号：US4342231A
公开(公告)日：1982-08-03
申请号：US217025
申请日：1980-12-16
申请人： Yoshimi Yamamoto , Yoshitaka Matsuoka , Syozo Kasai , Yukio Takahashi , Takeo Nagata , Akira Nagasu , Tomomasa Yoshida , Satoshi Shimada
发明人： Yoshimi Yamamoto , Yoshitaka Matsuoka , Syozo Kasai , Yukio Takahashi , Takeo Nagata , Akira Nagasu , Tomomasa Yoshida , Satoshi Shimada
CPC分类号： G01L19/147 , G01L13/025 , G01L19/0038 , G01L19/0645 , G01L19/142
摘要： A differential pressure transmitter has a pressure receiving portion and a sensor portion which are constituted from separate parts separably jointed with each other. The sensor portion includes a semiconductor sensor having one side formed with a resistance pattern and the other side which has a thick-walled peripheral portion and a thick-walled central portion. The semiconductor sensor is incorporated in the sensor portion as being supported at the thick-walled peripheral portion thereof. The pressure receiving portion includes seal diaphragms disposed on both sides of the pressure receiving portion and a central diaphragm disposed therein. The semiconductor sensor is arranged such that the side thereof carrying the resistance pattern faces the pressure receiving portion.
摘要翻译： 差压变送器具有压力接收部分和传感器部分，该压力接收部分和传感器部分由可分离地彼此连接的分开的部分构成。 传感器部分包括半导体传感器，其一侧形成有电阻图案，另一侧具有厚壁周边部分和厚壁中心部分。 半导体传感器被并入传感器部分中，被支撑在其厚壁周边部分。 受压部分包括设置在压力接收部分两侧的密封膜片和设置在其中的中心膜片。 半导体传感器被布置成使得其携带电阻图案的一侧面向压力接收部分。
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公开(公告)号：US4264889A
公开(公告)日：1981-04-28
申请号：US113208
申请日：1980-01-18
申请人： Yoshimi Yamamoto , Mitsuo Ai , Yoshitaka Matsuoka , Takeo Nagata , Tsutomu Okayama , Akira Ikegami
发明人： Yoshimi Yamamoto , Mitsuo Ai , Yoshitaka Matsuoka , Takeo Nagata , Tsutomu Okayama , Akira Ikegami
CPC分类号： G01L19/148 , G01L13/025 , G01L19/0038 , G01L19/04 , G01L19/0645
摘要： A pressure transducer has at least one pressure transmitting space filled with liquid, a space for a pressure to be sensed connected to the pressure transmitting space through a diaphragm, and a pressure sensitive element in the pressure transmitting space for transducing a pressure transmitted from the space for the pressure to be sensed to the pressure transmitting space through the diaphragm to an electrical signal. A printed circuit board wired to electrically connect terminals of the pressure sensitive element is arranged closely to the element and thin temperature sensitive elements for temperature-compensating the pressure sensitive element are arranged on the printed circuit board.
摘要翻译： 压力传感器具有填充有液体的至少一个压力传递空间，用于通过隔膜连接到压力传递空间的待感测压力的空间，以及压力传递空间中的用于传导从空间传递的压力的压力敏感元件 用于通过隔膜将压力传感到压力传递空间到电信号。 布线用于电连接压敏元件的端子的印刷电路板布置在元件上，并且用于温度补偿压敏元件的薄温敏元件布置在印刷电路板上。
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公开(公告)号：US4173900A
公开(公告)日：1979-11-13
申请号：US883589
申请日：1978-03-06
申请人： Masanori Tanabe , Satoshi Shimada , Motohisa Nishihara , Kazuji Yamada , Yasumasa Matsuda , Michitaka Shimazoe , Yoshitaka Matsuoka , Yukio Takahashi , Katsuya Katohgi , Mitsuo Ai
发明人： Masanori Tanabe , Satoshi Shimada , Motohisa Nishihara , Kazuji Yamada , Yasumasa Matsuda , Michitaka Shimazoe , Yoshitaka Matsuoka , Yukio Takahashi , Katsuya Katohgi , Mitsuo Ai
CPC分类号： G01L9/0054 , H01L29/84
摘要： A semiconductor pressure transducer comprising a disc-shaped pressure-responsive diaphragm; a pair of radial strain gauge units having a piezoresistance effect, formed by injecting an impurity in the radial direction in the surface of the diaphragm; and a pair of tangential strain gauge units having a piezoresistance effect, formed by injecting an impurity in the tangential direction in the surface of the diaphragm, wherein the distance from the pair of the radial strain gauge units to the center of the circular diaphragm is greater than the distance from the pair of the tangential strain gauge units to the center of the circular diaphragm.
摘要翻译： 一种半导体压力传感器，包括盘形压力响应膜片; 一对具有压阻效应的径向应变计单元，其通过在所述隔膜的表面中沿径向注入杂质而形成; 以及具有压阻效应的一对切向应变计单元，其通过在隔膜的表面中沿切线注入杂质形成，其中从一对径向应变计单元到圆形隔膜的中心的距离更大 比从一对切向应变计单元到圆形隔膜中心的距离。
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公开(公告)号：US07701282B2
公开(公告)日：2010-04-20
申请号：US12059348
申请日：2008-03-31
申请人： Yoshitaka Matsuoka
发明人： Yoshitaka Matsuoka
IPC分类号： H03F1/02
CPC分类号： H03F3/45179 , H03F3/45748 , H03F2203/45082 , H03F2203/45212 , H03F2203/45371
摘要： An offset canceling circuit includes a differential amplifier circuit configured to output a first output signal in response to a differential input signal; a latch circuit configured to hold a second output signal determined based on the first output signal; and an offset control circuit configured to supply a reference voltage to the differential amplifier circuit to adjust an offset of the differential amplifier circuit. The second output signal is a binary signal, and the latch circuit changes a signal level of the second output signal based on the first output signal. The offset control circuit acquires the second output signal from the latch circuit for every predetermined time and updates a voltage value of the reference voltage based on the signal levels of two of the second output signals which are acquired continuously in time series.
摘要翻译： 偏移消除电路包括：差分放大器电路，被配置为响应差分输入信号输出第一输出信号; 锁存电路，被配置为保持基于所述第一输出信号确定的第二输出信号; 以及偏移控制电路，被配置为向所述差分放大器电路提供参考电压以调整所述差分放大器电路的偏移。 第二输出信号是二进制信号，并且锁存电路基于第一输出信号改变第二输出信号的信号电平。 偏移控制电路每隔预定时间从锁存电路获取第二输出信号，并基于以时间序列连续获取的两个第二输出信号的信号电平来更新参考电压的电压值。
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公开(公告)号：US07622964B2
公开(公告)日：2009-11-24
申请号：US11387655
申请日：2006-03-23
申请人： Yoshitaka Matsuoka
发明人： Yoshitaka Matsuoka
CPC分类号： H03F3/505
摘要： An analog buffer circuit (10) includes a first p channel field effect transistor (11), an n channel field effect transistor (12) and a second p channel field effect transistor (13). The transistors are connected to one another in serial between power supplying terminals (VDD and GND). The transistors have gates connected to an input terminal (IN) in common. An output terminal (OUT) is connected to a connecting point between the n channel transistor and the second p channel transistor. With this structure, output voltage which appears on the output terminal is approximately proportional to input voltage supplied to the input terminal.
摘要翻译： 模拟缓冲电路（10）包括第一p沟道场效应晶体管（11），n沟道场效应晶体管（12）和第二p沟道场效应晶体管（13）。 晶体管在供电端子（VDD和GND）之间串联连接。 晶体管具有连接到输入端（IN）的门。 输出端子（OUT）连接到n沟道晶体管和第二p沟道晶体管之间的连接点。 利用这种结构，输出端子上出现的输出电压大致与输入端子的输入电压成比例。
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公开(公告)号：US20060214713A1
公开(公告)日：2006-09-28
申请号：US11388093
申请日：2006-03-23
申请人： Yoshitaka Matsuoka
发明人： Yoshitaka Matsuoka
IPC分类号： H03K3/017
CPC分类号： H03K5/1565 , H03K3/017
摘要： A duty ratio adjusting circuit has a differential buffer (11) to produce a pulse signal (Dout) according to an input sine wave signal (Ain) and a reference voltage. The pulse signal is inverted and filtered to be supplied to a first analog buffer (14) as a direct voltage. The first analog buffer outputs voltage equal to the direct voltage. A second analog buffer (15) has the same structure as the first analog buffer and outputs voltage equal to the reference voltage. A differential amplifying circuit (16) produces an output voltage (SDout) as the reference voltage according to the difference between voltages output from the first and the second analog buffers. Capacitor (17,19) connected to lines connecting between the first and the second analog buffers and the differential amplifying circuit.
摘要翻译： 占空比调整电路具有根据输入正弦波信号（Ain）和参考电压产生脉冲信号（Dout）的差分缓冲器（11）。 脉冲信号被反相并被滤波以提供给第一模拟缓冲器（14）作为直流电压。 第一个模拟缓冲器输出等于直流电压的电压。 第二模拟缓冲器（15）具有与第一模拟缓冲器相同的结构，并输出等于参考电压的电压。 差分放大电路（16）根据从第一和第二模拟缓冲器输出的电压之间的差产生作为参考电压的输出电压（SDout）。 电容器（17,19）连接到连接在第一和第二模拟缓冲器与差动放大电路之间的线路。
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公开(公告)号：US4303903A
公开(公告)日：1981-12-01
申请号：US77838
申请日：1979-09-21
申请人： Yoshitaka Matsuoka , Michitaka Shimazoe , Yoshimi Yamamoto , Mitsuo Ai , Keiji Miyauchi , Hideyuki Nemoto , Masatoshi Tsuchiya , Masanori Tanabe
发明人： Yoshitaka Matsuoka , Michitaka Shimazoe , Yoshimi Yamamoto , Mitsuo Ai , Keiji Miyauchi , Hideyuki Nemoto , Masatoshi Tsuchiya , Masanori Tanabe
CPC分类号： G01L19/0645 , G01L19/147
摘要： A pressure transducer comprising a silicon diaphragm on which a semiconductor strain gauge is formed and which has a diaphragm portion deformable in response to a pressure, an insulating support which is made of borosilicate glass having the silicon diaphragm rigidly mounted thereon and which is provided with a pressure introducing hole in its central part, a metallic support which is cylindrical, which is made of an iron-nickel alloy similar in the thermal expansion coefficient to the borosilicate glass and on which the glass insulating support is rigidly mounted, and a metallic housing within which the integrated structure consisting of the silicon diaphragm, the glass insulating support and the metallic support is arranged; the silicon diaphragm, the insulating support and the metallic support being joined by the anodic bonding, the metallic support being rigidly welded to the metallic housing at its lower end part.
摘要翻译： 一种压力传感器，包括其上形成有半导体应变仪的硅膜片，并且具有响应于压力可变形的隔膜部分，由硼硅玻璃制成的绝缘支撑件，所述绝缘支撑件具有刚性地安装在其上的硅膜片，并且设置有 在其中心部分具有压力导入孔，金属支撑体是圆柱形的，其由热膨胀系数类似于铁硅镍合金的硼硅酸盐玻璃制成，玻璃绝缘支架刚性地安装在其上，金属壳体 设置由硅隔膜，玻璃绝缘支架和金属支架构成的集成结构; 硅隔膜，绝缘支撑件和金属支撑件通过阳极接合而接合，金属支撑件在其下端部处刚性地焊接到金属外壳。
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公开(公告)号：US20080238547A1
公开(公告)日：2008-10-02
申请号：US12059348
申请日：2008-03-31
申请人： Yoshitaka MATSUOKA
发明人： Yoshitaka MATSUOKA
IPC分类号： H03F3/45
CPC分类号： H03F3/45179 , H03F3/45748 , H03F2203/45082 , H03F2203/45212 , H03F2203/45371
摘要： An offset canceling circuit includes a differential amplifier circuit configured to output a first output signal in response to a differential input signal; a latch circuit configured to hold a second output signal determined based on the first output signal; and an offset control circuit configured to supply a reference voltage to the differential amplifier circuit to adjust an offset of the differential amplifier circuit. The second output signal is a binary signal, and the latch circuit changes a signal level of the second output signal based on the first output signal. The offset control circuit acquires the second output signal from the latch circuit for every predetermined time and updates a voltage value of the reference voltage based on the signal levels of two of the second output signals which are acquired continuously in time series.
摘要翻译： 偏移消除电路包括：差分放大器电路，被配置为响应差分输入信号输出第一输出信号; 锁存电路，被配置为保持基于所述第一输出信号确定的第二输出信号; 以及偏移控制电路，被配置为向所述差分放大器电路提供参考电压以调整所述差分放大器电路的偏移。 第二输出信号是二进制信号，并且锁存电路基于第一输出信号改变第二输出信号的信号电平。 偏移控制电路每隔预定时间从锁存电路获取第二输出信号，并基于以时间序列连续获取的两个第二输出信号的信号电平来更新参考电压的电压值。
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