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7 条记录 (耗时 0.036 秒)

    Semiconductor pressure transducer
    2.
    发明授权
    Semiconductor pressure transducer 失效
    半导体压力传感器

    公开(公告)号：US4050313A

    公开(公告)日：1977-09-27

    申请号：US692368

    申请日：1976-06-03

    申请人： Satoshi Shimada ,  Kazuji Yamada ,  Yasumasa Matsuda ,  Ichiro Kimura ,  Michitaka Shimazoe ,  Yukio Takahashi

    发明人： Satoshi Shimada ,  Kazuji Yamada ,  Yasumasa Matsuda ,  Ichiro Kimura ,  Michitaka Shimazoe ,  Yukio Takahashi

    IPC分类号： G01L9/00 ,  G01L9/06

    CPC分类号： G01L9/0054

    摘要： A semiconductor pressure transducer comprises a circular diaphragm formed of a single crystal semiconductor material, at least a first strain gauge element having a piezoresistance effect and formed by injecting an impurity into the diaphragm in a linear region extending in parallel with a predetermined axis which extends transversely of the surface of the diaphragm, at least a second strain gauge element having the piezoresistance effect and formed by injecting an impurity into the diaphragm in a linear region extending in the direction perpendicular to the axis, and means for securing the diaphragm at the outer peripheral portion thereof. The distance between the second strain gauge element and the center of the diaphragm is differed from the distance between the center of the first strain gauge element and the latter.

    摘要翻译： 半导体压力传感器包括由单晶半导体材料形成的圆形隔膜，至少第一应变计元件，具有压阻效应，并且通过在与横向延伸的预定轴线平行延伸的线性区域中注入杂质形成。 至少一个具有压电效应的第二应变计元件，并且通过在垂直于该轴线的方向上延伸的线性区域中将杂质注入到隔膜中而形成，以及用于将隔膜固定在外周的装置 部分。 第二应变计元件与隔膜的中心之间的距离与第一应变计元件的中心与后者之间的距离不同。

    Pressure sensitive apparatus
    3.
    发明授权
    Pressure sensitive apparatus 失效
    压敏设备

    公开(公告)号：US4303903A

    公开(公告)日：1981-12-01

    申请号：US77838

    申请日：1979-09-21

    申请人： Yoshitaka Matsuoka ,  Michitaka Shimazoe ,  Yoshimi Yamamoto ,  Mitsuo Ai ,  Keiji Miyauchi ,  Hideyuki Nemoto ,  Masatoshi Tsuchiya ,  Masanori Tanabe

    发明人： Yoshitaka Matsuoka ,  Michitaka Shimazoe ,  Yoshimi Yamamoto ,  Mitsuo Ai ,  Keiji Miyauchi ,  Hideyuki Nemoto ,  Masatoshi Tsuchiya ,  Masanori Tanabe

    IPC分类号： G01L9/04 ,  G01L9/00 ,  H01L29/84

    CPC分类号： G01L19/0645 ,  G01L19/147

    摘要： A pressure transducer comprising a silicon diaphragm on which a semiconductor strain gauge is formed and which has a diaphragm portion deformable in response to a pressure, an insulating support which is made of borosilicate glass having the silicon diaphragm rigidly mounted thereon and which is provided with a pressure introducing hole in its central part, a metallic support which is cylindrical, which is made of an iron-nickel alloy similar in the thermal expansion coefficient to the borosilicate glass and on which the glass insulating support is rigidly mounted, and a metallic housing within which the integrated structure consisting of the silicon diaphragm, the glass insulating support and the metallic support is arranged; the silicon diaphragm, the insulating support and the metallic support being joined by the anodic bonding, the metallic support being rigidly welded to the metallic housing at its lower end part.

    摘要翻译： 一种压力传感器，包括其上形成有半导体应变仪的硅膜片，并且具有响应于压力可变形的隔膜部分，由硼硅玻璃制成的绝缘支撑件，所述绝缘支撑件具有刚性地安装在其上的硅膜片，并且设置有 在其中心部分具有压力导入孔，金属支撑体是圆柱形的，其由热膨胀系数类似于铁硅镍合金的硼硅酸盐玻璃制成，玻璃绝缘支架刚性地安装在其上，金属壳体 设置由硅隔膜，玻璃绝缘支架和金属支架构成的集成结构; 硅隔膜，绝缘支撑件和金属支撑件通过阳极接合而接合，金属支撑件在其下端部处刚性地焊接到金属外壳。

    Semiconductor pressure transducer
    4.
    发明授权
    Semiconductor pressure transducer 失效
    半导体压力传感器

    公开(公告)号：US4065971A

    公开(公告)日：1978-01-03

    申请号：US701531

    申请日：1976-07-01

    申请人： Michitaka Shimazoe ,  Kousuke Nakamura ,  Yasuo Matsushita ,  Satoshi Shimada ,  Kazuji Yamada ,  Yukio Takahashi

    发明人： Michitaka Shimazoe ,  Kousuke Nakamura ,  Yasuo Matsushita ,  Satoshi Shimada ,  Kazuji Yamada ,  Yukio Takahashi

    IPC分类号： H01L29/84 ,  G01L9/00 ,  G01L9/06

    CPC分类号： G01L9/0054

    摘要： A semiconductor pressure transducer includes a monocrystalline semiconductor diaphragm, the outer edges of which are fixed. When subjected to pressure, the transducer produces radial strains of opposite polarity in a central portion thereof and a portion surrounding the central portion close to the edge of the strain inducing region. The diaphragm contains a plurality of elongated resistances formed of semiconductor material of the same conductivity type which are electrically isolated from the diaphragm, per se. Resistances of an individual set which lie in proximity to one another are combined in the form of a bridge. The longitudinal direction of resistances forming one set of opposing arms of the bridge extend along axes of the same crystal system as the longitudinal direction of the elongated resistances forming the other set of opposing arms of the bridge. However, the longitudinal directions of the separate sets of resistances forming the opposing arms of the bridge lie in directions so that they do not orthogonally intersect each other.

    摘要翻译： 半导体压力传感器包括其外边缘固定的单晶半导体膜片。 当经受压力时，换能器在其中心部分产生相反极性的径向应变，并且围绕中心部分的部分靠近应变诱导区域的边缘产生。 隔膜包含由与膜片电气隔离的相同导电类型的半导体材料形成的多个细长电阻。 位于彼此靠近的单个组的电阻以桥的形式组合。 形成桥的一组相对臂的电阻的纵向方向沿与构成桥的另一组相对臂的细长电阻的纵向相同的晶体系的轴线延伸。 然而，形成桥的相对臂的单独的电阻组的纵向方向在方向上，使得它们不会彼此正交相交。

    Semiconductor pressure transducer
    6.
    发明授权
    Semiconductor pressure transducer 失效
    半导体压力传感器

    公开(公告)号：US4618844A

    公开(公告)日：1986-10-21

    申请号：US494075

    申请日：1983-05-12

    申请人： Yukio Takahashi ,  Michitaka Shimazoe ,  Yoshitaka Matsuoka

    发明人： Yukio Takahashi ,  Michitaka Shimazoe ,  Yoshitaka Matsuoka

    IPC分类号： H01L29/84 ,  G01L9/00 ,  G01L9/04 ,  G01L1/22

    CPC分类号： G01L9/0054

    摘要： In a semiconductor pressure transducer in accordance with the present invention, an oxide film is formed on a semiconductor base having a strain gauge resistor element for the purpose of protecting the strain gauge resistor element. Over the oxide film, a conductive metal film is formed which does not overlap with the strain gauge resistor element through said oxide film.

    摘要翻译： 在根据本发明的半导体压力传感器中，为了保护应变计电阻元件，在具有应变计电阻元件的半导体基底上形成氧化膜。 在氧化物膜上形成导电金属膜，其不通过所述氧化膜与应变计电阻元件重叠。

    Load cell
    7.
    发明授权
    Load cell 失效
    称重传感器

    公开(公告)号：US4454771A

    公开(公告)日：1984-06-19

    申请号：US318361

    申请日：1981-11-05

    申请人： Michitaka Shimazoe ,  Yoshitaka Matsuoka

    发明人： Michitaka Shimazoe ,  Yoshitaka Matsuoka

    IPC分类号： G01L1/18

    CPC分类号： G01L1/18

    摘要： A load cell comprises a semiconductor diaphragm which includes an outer flange portion, a central rigid portion having a smaller thickness than the outer flange portion and a thin resilient portion provided between the outer flange portion and the central rigid portion. At least two piezo-resistors constituting at least part of a bridge circuit are formed in the resilient portion. The load cell further comprises a first glass block secured to the central rigid portion, and a second glass block for securing the outer flange portion. A load is applied to the semiconductor diaphragm through the first glass block, wherein measurement of the applied load is effected by detecting variation in resistance of the resistor bridge circuit.

    摘要翻译： 测力传感器包括半导体膜片，其包括外凸缘部分，具有比外凸缘部分更小的厚度的中心刚性部分和设置在外凸缘部分和中心刚性部分之间的薄弹性部分。 构成桥接电路的至少一部分的至少两个压电电阻形成在弹性部分中。 测力传感器还包括固定到中心刚性部分的第一玻璃块和用于固定外凸缘部分的第二玻璃块。 通过第一玻璃块将负载施加到半导体膜片，其中通过检测电阻器桥接电路的电阻的变化来实现所施加的负载的测量。