公开(公告)号：US4306460A

公开(公告)日：1981-12-22

申请号：US103407

申请日：1979-12-13

申请人： Yutaka Sakurai ,  Takeo Nagata ,  Yoshitaka Matsuoka ,  Satoshi Shimada ,  Mitsuo Ai

发明人： Yutaka Sakurai ,  Takeo Nagata ,  Yoshitaka Matsuoka ,  Satoshi Shimada ,  Mitsuo Ai

IPC分类号： G01L9/04 ,  G01L9/00 ,  G01L13/02 ,  G01L13/06 ,  G01L9/06

CPC分类号： G01L13/025 ,  G01L9/0052

摘要： A differential pressure transducer having a cantilever and a semiconductor strain gauge attached to each side of the cantilever at an intermediate portion of the latter. The cantilever has one end fixed by electron beam welding to a fixing member and the other end left for free displacement in response to a differential pressure. The displacement of the other end of the cantilever is detected as changes in the electric resistances of the semiconductor strain gauges.

摘要翻译： 一种差压传感器，其具有在后者的中间部分处连接到悬臂的每一侧的悬臂和半导体应变计。 悬臂具有通过电子束焊接固定到固定构件的一端，另一端响应于压差而离开自由位移。 悬臂的另一端的位移被检测为半导体应变计的电阻的变化。

公开(公告)号：US4166384A

公开(公告)日：1979-09-04

申请号：US940077

申请日：1978-09-06

申请人： Yasumasa Matsuda ,  Kazuji Yamada ,  Satoshi Shimada ,  Motohisa Nishihara ,  Tomio Yasuda ,  Masatoshi Tsuchiya ,  Ko Soeno ,  Mitsuo Ai ,  Takeo Nagata ,  Yoshitaka Matsuoka

发明人： Yasumasa Matsuda ,  Kazuji Yamada ,  Satoshi Shimada ,  Motohisa Nishihara ,  Tomio Yasuda ,  Masatoshi Tsuchiya ,  Ko Soeno ,  Mitsuo Ai ,  Takeo Nagata ,  Yoshitaka Matsuoka

IPC分类号： G01L1/26 ,  C21D8/00 ,  C22C38/00 ,  C22C38/10 ,  G01D5/16 ,  G01L1/22 ,  G01L9/00 ,  G01L1/04 ,  G01L1/18

CPC分类号： G01L1/2293 ,  G01L9/0055

摘要： A semiconductor transducer comprising an improved strain-yielding body yielding a strain in response to the impartation of a force or displacement, and a semiconductor strain gauge bonded to the strain-yielding body. The improved strain-yielding body is made of an iron-nickel-cobalt alloy containing 28.2 to 31.0% by weight of nickel and 15.0 to 19.5% by weight of cobalt. This iron-nickel-cobalt alloy is initially heated up to a temperature above 600.degree. C. for the purpose of standard heat treatment for removing its internal strain. After the standard heat treatment, the iron-nickel-cobalt alloy is subjected to cold working at a working rate of more than and including 60%, and is then subjected to heat treatment at a temperature between 350.degree. C. and 600.degree. C. The heat-treated iron-nickel-cobalt alloy is shaped into the predetermined form of the strain-yielding body.

摘要翻译： 一种半导体换能器，其包括响应于施加力或位移而产生应变的改进的应变屈服体以及结合到应变屈服体的半导体应变仪。 改进的应变产生体由含有28.2至31.0重量％的镍和15.0至19.5重量％的钴的铁镍钴合金制成。 为了去除其内部应变，这种铁镍钴合金最初被加热到高于600℃的温度以进行标准热处理。 经过标准热处理后，铁镍钴合金以大于60％的加工速度进行冷加工，然后在350℃〜600℃的温度下进行热处理。 热处理的铁镍钴合金被成形为应变产生体的预定形式。

公开(公告)号：US4264889A

公开(公告)日：1981-04-28

申请号：US113208

申请日：1980-01-18

申请人： Yoshimi Yamamoto ,  Mitsuo Ai ,  Yoshitaka Matsuoka ,  Takeo Nagata ,  Tsutomu Okayama ,  Akira Ikegami

发明人： Yoshimi Yamamoto ,  Mitsuo Ai ,  Yoshitaka Matsuoka ,  Takeo Nagata ,  Tsutomu Okayama ,  Akira Ikegami

IPC分类号： G01L9/04 ,  G01L9/00 ,  G01L13/02 ,  G01L19/04 ,  G01L1/22

CPC分类号： G01L19/148 ,  G01L13/025 ,  G01L19/0038 ,  G01L19/04 ,  G01L19/0645

摘要： A pressure transducer has at least one pressure transmitting space filled with liquid, a space for a pressure to be sensed connected to the pressure transmitting space through a diaphragm, and a pressure sensitive element in the pressure transmitting space for transducing a pressure transmitted from the space for the pressure to be sensed to the pressure transmitting space through the diaphragm to an electrical signal. A printed circuit board wired to electrically connect terminals of the pressure sensitive element is arranged closely to the element and thin temperature sensitive elements for temperature-compensating the pressure sensitive element are arranged on the printed circuit board.

摘要翻译： 压力传感器具有填充有液体的至少一个压力传递空间，用于通过隔膜连接到压力传递空间的待感测压力的空间，以及压力传递空间中的用于传导从空间传递的压力的压力敏感元件 用于通过隔膜将压力传感到压力传递空间到电信号。 布线用于电连接压敏元件的端子的印刷电路板布置在元件上，并且用于温度补偿压敏元件的薄温敏元件布置在印刷电路板上。

公开(公告)号：US4303903A

公开(公告)日：1981-12-01

申请号：US77838

申请日：1979-09-21

申请人： Yoshitaka Matsuoka ,  Michitaka Shimazoe ,  Yoshimi Yamamoto ,  Mitsuo Ai ,  Keiji Miyauchi ,  Hideyuki Nemoto ,  Masatoshi Tsuchiya ,  Masanori Tanabe

发明人： Yoshitaka Matsuoka ,  Michitaka Shimazoe ,  Yoshimi Yamamoto ,  Mitsuo Ai ,  Keiji Miyauchi ,  Hideyuki Nemoto ,  Masatoshi Tsuchiya ,  Masanori Tanabe

IPC分类号： G01L9/04 ,  G01L9/00 ,  H01L29/84

CPC分类号： G01L19/0645 ,  G01L19/147

摘要： A pressure transducer comprising a silicon diaphragm on which a semiconductor strain gauge is formed and which has a diaphragm portion deformable in response to a pressure, an insulating support which is made of borosilicate glass having the silicon diaphragm rigidly mounted thereon and which is provided with a pressure introducing hole in its central part, a metallic support which is cylindrical, which is made of an iron-nickel alloy similar in the thermal expansion coefficient to the borosilicate glass and on which the glass insulating support is rigidly mounted, and a metallic housing within which the integrated structure consisting of the silicon diaphragm, the glass insulating support and the metallic support is arranged; the silicon diaphragm, the insulating support and the metallic support being joined by the anodic bonding, the metallic support being rigidly welded to the metallic housing at its lower end part.

摘要翻译： 一种压力传感器，包括其上形成有半导体应变仪的硅膜片，并且具有响应于压力可变形的隔膜部分，由硼硅玻璃制成的绝缘支撑件，所述绝缘支撑件具有刚性地安装在其上的硅膜片，并且设置有 在其中心部分具有压力导入孔，金属支撑体是圆柱形的，其由热膨胀系数类似于铁硅镍合金的硼硅酸盐玻璃制成，玻璃绝缘支架刚性地安装在其上，金属壳体 设置由硅隔膜，玻璃绝缘支架和金属支架构成的集成结构; 硅隔膜，绝缘支撑件和金属支撑件通过阳极接合而接合，金属支撑件在其下端部处刚性地焊接到金属外壳。

公开(公告)号：US4173900A

公开(公告)日：1979-11-13

申请号：US883589

申请日：1978-03-06

申请人： Masanori Tanabe ,  Satoshi Shimada ,  Motohisa Nishihara ,  Kazuji Yamada ,  Yasumasa Matsuda ,  Michitaka Shimazoe ,  Yoshitaka Matsuoka ,  Yukio Takahashi ,  Katsuya Katohgi ,  Mitsuo Ai

发明人： Masanori Tanabe ,  Satoshi Shimada ,  Motohisa Nishihara ,  Kazuji Yamada ,  Yasumasa Matsuda ,  Michitaka Shimazoe ,  Yoshitaka Matsuoka ,  Yukio Takahashi ,  Katsuya Katohgi ,  Mitsuo Ai

IPC分类号： G01L9/00 ,  H01L29/84 ,  G01L9/06

CPC分类号： G01L9/0054 ,  H01L29/84

摘要： A semiconductor pressure transducer comprising a disc-shaped pressure-responsive diaphragm; a pair of radial strain gauge units having a piezoresistance effect, formed by injecting an impurity in the radial direction in the surface of the diaphragm; and a pair of tangential strain gauge units having a piezoresistance effect, formed by injecting an impurity in the tangential direction in the surface of the diaphragm, wherein the distance from the pair of the radial strain gauge units to the center of the circular diaphragm is greater than the distance from the pair of the tangential strain gauge units to the center of the circular diaphragm.

摘要翻译： 一种半导体压力传感器，包括盘形压力响应膜片; 一对具有压阻效应的径向应变计单元，其通过在所述隔膜的表面中沿径向注入杂质而形成; 以及具有压阻效应的一对切向应变计单元，其通过在隔膜的表面中沿切线注入杂质形成，其中从一对径向应变计单元到圆形隔膜的中心的距离更大 比从一对切向应变计单元到圆形隔膜中心的距离。