发明授权
US4333226A Method of forming patterned refractory metal films by selective oxygen
implant and sublimation
失效
通过选择性氧注入和升华形成图案化的难熔金属膜的方法
- 专利标题： Method of forming patterned refractory metal films by selective oxygen implant and sublimation
- 专利标题（中）： 通过选择性氧注入和升华形成图案化的难熔金属膜的方法
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申请号： US209889申请日： 1980-11-24
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公开(公告)号： US4333226A公开(公告)日： 1982-06-08
- 发明人: Haruhiko Abe , Masao Nagatomo , Natsuro Tsubouchi , Hiroshi Harada , Junichi Mitsuhashi
- 申请人： Haruhiko Abe , Masao Nagatomo , Natsuro Tsubouchi , Hiroshi Harada , Junichi Mitsuhashi
- 申请人地址： JPX
- 专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址： JPX
- 优先权： JPX54/156504 19791130
- 主分类号： H01L21/3213
- IPC分类号： H01L21/3213 ; H01L21/28 ; H01L21/316 ; H01L21/321 ; H01L21/768 ; B05D3/06 ; B05D5/12 ; H01L21/312
摘要：
A thin film of a metal which is capable of oxidation and sublimation is formed on a major surface of a semiconductor substrate, and a portion of a major surface of the thin metallic film is irradiated with an oxygen ion beam to convert a portion of the thin metallic film to an oxide, and subsequently the thin metallic film is heat treated to remove the oxide by sublimation, whereby electrodes or wiring for a semiconductor integrated circuit are formed by the remaining thin metallic film.
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