发明授权
- 专利标题： Thin film capacitor with a dual bottom electrode structure
- 专利标题（中）： 具有双底电极结构的薄膜电容器
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申请号： US335136申请日： 1981-12-28
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公开(公告)号： US4423087A公开(公告)日： 1983-12-27
- 发明人: James K. Howard , Kris V. Srikrishnan
- 申请人： James K. Howard , Kris V. Srikrishnan
- 申请人地址： NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： NY Armonk
- 主分类号： H01L27/04
- IPC分类号： H01L27/04 ; H01G4/005 ; H01G4/008 ; H01G4/08 ; H01G4/33 ; H01L21/28 ; H01L21/822 ; H01L21/8242 ; H01L21/8246 ; H01L27/01 ; H01L27/105 ; H01L27/108 ; H01L29/43 ; H01L29/92 ; H01G1/01 ; H01G4/12
摘要：
A thin film capacitor having a dual bottom electrode is provided. The bottom electrode comprises a first layer of metal and a second layer of platinum, said metal of the first layer being of the nature of forming a stable intermetallic phase with the platinum during heat treatment. The metal of the first layer is typically selected from the group consisting of Hf, Zr, and Ta. The thin film capacitor is suitable for the decoupling capacitor of VLSI.
公开/授权文献
- US5518102A Diverter 公开/授权日：1996-05-21
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