发明授权
- 专利标题： Selective etching method of polyimide type resin film
- 专利标题（中）： 聚酰亚胺树脂薄膜的选择性蚀刻方法
-
申请号： US445576申请日： 1982-11-30
-
公开(公告)号： US4436583A公开(公告)日： 1984-03-13
- 发明人: Atsushi Saiki , Takao Iwayanagi , Saburo Nonogaki , Takashi Nishida , Seiki Harada
- 申请人： Atsushi Saiki , Takao Iwayanagi , Saburo Nonogaki , Takashi Nishida , Seiki Harada
- 申请人地址： JPX Tokyo
- 专利权人： Hitachi, Ltd.
- 当前专利权人： Hitachi, Ltd.
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX56-205326 19811221
- 主分类号： H01L21/30
- IPC分类号： H01L21/30 ; C08J7/02 ; H01L21/027 ; H01L21/308 ; H01L21/311 ; H01L21/312 ; H01L23/48 ; H05K1/03 ; H05K3/00 ; B44C1/22 ; C03C15/00 ; C03C25/06 ; B29C17/08
摘要：
Disclosed is a selective etching method of a polyimide type resin film which uses an etching mask consisting of a negative type photoresist material prepared by adding a photosensitive reagent to an unsaturated ketone polymer such as polymethylisopropenylketone as the base resin and an etching solution consisting of 20 to 40% by volume of hydrazine hydrate and the balance of a polyamine. The etching method of the present invention can provide the pattern of the polyimide type resin film having high dimensional accuracy by wet etching.
信息查询
IPC分类:
