In a semiconductor device, for example a SPS memory having narrow coplanar silicon electrodes, the electrodes are formed by etching grooves or slots having a width in the submicron range into a polycrystalline silicon layer with the slot width being defined by the oxidized edge of a silicon auxiliary layer. The electrodes are alternately covered by silicon oxide and by a layer comprising silicon nitride. The covered electrodes are first interconnected pairwise, whereupon they are separated from each other, and are provided with self-aligned contact windows. Thus, the very narrow electrodes can be contracted without technological problems and memory cells of very small dimensions are provided.