发明授权
- 专利标题： Method of simultaneously manufacturing semiconductor regions having different dopings
- 专利标题（中）： 同时制造具有不同掺杂的半导体区域的方法
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申请号： US709465申请日： 1985-03-07
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公开(公告)号： US4653176A公开(公告)日： 1987-03-31
- 发明人: Alfred H. Van Ommen
- 申请人： Alfred H. Van Ommen
- 申请人地址： NY New York
- 专利权人： U.S. Philips Corporation
- 当前专利权人： U.S. Philips Corporation
- 当前专利权人地址： NY New York
- 优先权： NLX8400789 19840313
- 主分类号： H01L27/04
- IPC分类号： H01L27/04 ; H01L21/02 ; H01L21/033 ; H01L21/22 ; H01L21/266 ; H01L21/321 ; H01L21/3215 ; H01L21/822 ; H01L21/38 ; H01L21/425
摘要：
A method of simultaneously manufacturing semiconductor regions having different doping concentrations, for example, for obtaining semiconductor resistors having differences values. Due to difference in the rate of oxidation, oxide edges of different widths can be formed by oxidation of n-type silicon regions thus obtained. According to the invention, ion implantation or deposition takes place through doping windows for each of which the ratio between the window surface area and the surface area to be doped is different. Subsequently, homogeneous doping concentrations are obtained by diffusion.
公开/授权文献
- US5686035A Method for forming a cushion 公开/授权日：1997-11-11
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