公开(公告)号：US4653176A

公开(公告)日：1987-03-31

申请号：US709465

申请日：1985-03-07

申请人： Alfred H. Van Ommen

发明人： Alfred H. Van Ommen

IPC分类号： H01L27/04 ,  H01L21/02 ,  H01L21/033 ,  H01L21/22 ,  H01L21/266 ,  H01L21/321 ,  H01L21/3215 ,  H01L21/822 ,  H01L21/38 ,  H01L21/425

CPC分类号： H01L28/20 ,  H01L21/033 ,  H01L21/321 ,  H01L21/32155 ,  Y10S148/077 ,  Y10S148/083 ,  Y10S148/136

摘要： A method of simultaneously manufacturing semiconductor regions having different doping concentrations, for example, for obtaining semiconductor resistors having differences values. Due to difference in the rate of oxidation, oxide edges of different widths can be formed by oxidation of n-type silicon regions thus obtained. According to the invention, ion implantation or deposition takes place through doping windows for each of which the ratio between the window surface area and the surface area to be doped is different. Subsequently, homogeneous doping concentrations are obtained by diffusion.

摘要翻译： 同时制造具有不同掺杂浓度的半导体区域的方法，例如用于获得具有差值的半导体电阻器。 由于氧化速率的差异，可以通过如此获得的n型硅区域的氧化形成不同宽度的氧化物边缘。 根据本发明，通过掺杂窗口进行离子注入或沉积，其中窗口表面积和待掺杂的表面积之间的比例不同。 随后，通过扩散获得均匀的掺杂浓度。