发明授权
- 专利标题： Dry etching patterning of electrical and optical materials
- 专利标题（中）： 电光学材料的干蚀刻图案化
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申请号： US73905申请日： 1987-07-13
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公开(公告)号： US4734152A公开(公告)日： 1988-03-29
- 发明人: Michael W. Geis , Nikolay N. Efremow , Stella W. Pang
- 申请人： Michael W. Geis , Nikolay N. Efremow , Stella W. Pang
- 申请人地址： MA Cambridge
- 专利权人： Massachusetts Institute of Technology
- 当前专利权人： Massachusetts Institute of Technology
- 当前专利权人地址： MA Cambridge
- 主分类号： H01L21/306
- IPC分类号： H01L21/306 ; H01L21/3065 ; H01L21/308 ; H01L21/311 ; H01L21/3213 ; H01L21/465 ; B44C1/22 ; C03C15/00 ; C23F1/02
摘要：
A new anisotropic dry etching system using a hot jet tube to heat and dissociate non-reactive source gas to form a directed flux of reactive specie or radicals for etching materials through openings in a resist or a reusable stencil of SiN.sub.x wherein x is in the range of 1.5 to 0.5. Si and GaAs may be etched using Cl.sub.2, F.sub.3, Br.sub.2 or SF.sub.6 source gasses. Pb or Hg, Cd, Te may be etched using n-butane, dimethyl ether or acetone as a source gas for CH.sub.3 radicals. The tube may be formed of tungsten or where fluorine is used as a source gas, an irridium tube is preferred. Alternatively, a tube formed of rhenium or an alloy of rhenium and tungsten is preferred for some applications.
公开/授权文献
- US5996305A Assembly of wood I-beams 公开/授权日：1999-12-07
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