公开(公告)号：US08025831B2

公开(公告)日：2011-09-27

申请号：US10852448

申请日：2004-05-24

申请人： Yen Peng Kong ,  Hong Yee Low ,  Stella W. Pang ,  Albert F. Yee

发明人： Yen Peng Kong ,  Hong Yee Low ,  Stella W. Pang ,  Albert F. Yee

IPC分类号： B27N3/08 ,  B28B5/00 ,  A61M25/00 ,  B28B5/02 ,  B32B3/00 ,  B32B5/16

CPC分类号： A61M25/00 ,  B27N3/08 ,  B28B3/06 ,  B81C99/0085 ,  B81C2201/034 ,  B81C2203/032 ,  B81C2203/038 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  Y10T428/24479 ,  Y10T428/254

摘要： The present invention is directed to micro- and nano-scale imprinting methods and the use of such methods to fabricate supported and/or free-standing 3-D micro- and/or nano-structures of polymeric, ceramic, and/or metallic materials. In some embodiments, a duo-mold approach is employed in the fabrication of these structures. In such methods, surface treatments are employed to impart differential surface energies to different molds and/or different parts of the mold(s). Such surface treatments permit the formation of three-dimensional (3-D) structures through imprinting and the transfer of such structures to a substrate. In some or other embodiments, such surface treatments and variation in glass transition temperature of the polymers used can facilitate separation of the 3-D structures from the molds to form free-standing micro- and/or nano-structures individually and/or in a film. In some or other embodiments, a “latch-on” assembly technique is utilized to form supported and/or free-standing stacked micro- and/or nano-structures that enable the assembly of polymers without a glass transition temperature and eliminate the heating required to assemble thermoplastic polymers.

摘要翻译： 本发明涉及微尺度和纳米级压印方法，并且使用这种方法来制造聚合物，陶瓷和/或金属材料的负载和/或独立的3-D微观和/或纳米结构 。 在一些实施例中，在制造这些结构中采用双模方法。 在这种方法中，使用表面处理以将不同的表面能赋予模具的不同模具和/或模具的不同部分。 这种表面处理允许通过压印形成三维（3-D）结构并将这种结构转移到基底上。 在一些或其它实施方案中，所使用的聚合物的这种表面处理和玻璃化转变温度的变化可促进3-D结构与模具的分离，以单独形成独立的和/或纳米结构，并且/ 电影。 在一些或其它实施方案中，使用“闭锁”组装技术来形成支撑和/或独立堆叠的微结构和/或纳米结构，其能够组装聚合物而不具有玻璃化转变温度并消除所需的加热 组装热塑性聚合物。

公开(公告)号：US5017403A

公开(公告)日：1991-05-21

申请号：US337299

申请日：1989-04-13

申请人： Stella W. Pang ,  Mark W. Horn

发明人： Stella W. Pang ,  Mark W. Horn

IPC分类号： C23C16/08 ,  C23C16/26 ,  C23C16/44 ,  C23C16/455 ,  C23C16/509 ,  H01L21/314 ,  H01L21/3205 ,  H01L21/768

CPC分类号： C23C16/45565 ,  C23C16/08 ,  C23C16/26 ,  C23C16/5096 ,  H01L21/314 ,  H01L21/32051 ,  H01L21/76819 ,  H01L21/7684

摘要： A planarization process and apparatus which employs plasma-enhanced chemical vapor deposition (PECVD) to form plarnarization films of dielectric or conductive carbonaceous material on step-like substrates.

摘要翻译： 使用等离子体增强化学气相沉积（PECVD）的平坦化工艺和装置在阶梯状衬底上形成电介质或导电碳质材料的片状化膜。

公开(公告)号：US07618510B2

公开(公告)日：2009-11-17

申请号：US10558032

申请日：2004-05-20

申请人： Li Tan ,  Yen-Peng Kong ,  Stella W. Pang ,  Albert F. Yee

发明人： Li Tan ,  Yen-Peng Kong ,  Stella W. Pang ,  Albert F. Yee

IPC分类号： B44C1/10 ,  B44C1/18 ,  B44C1/24 ,  B32B37/10 ,  B32B37/16 ,  B32B37/02 ,  B05D1/02 ,  B05D1/18 ,  H01L21/302 ,  B44C1/17 ,  B32B37/06 ,  B05D5/12 ,  B05D1/26 ,  H01L21/306

CPC分类号： B81C1/0046

摘要： A method of applying a pattern on a topography includes first applying a polymer film to an elastomer member, such as PDMS, to form a pad. The pad is then applied to a substrate having a varying topography under pressure. The polymer film is transferred to the substrate due to the plastic deformation of the polymer film under pressure compared to the elastic deformation of the PDMS member. Thus, upon removal of the pad from the substrate, the PDMS member pulls away from the polymer layer, thereby depositing the polymer layer upon the substrate.

摘要翻译： 在图形上施加图案的方法包括首先将聚合物膜施加到诸如PDMS的弹性体构件上以形成垫。 然后将该垫施加到在压力下具有变化的形貌的基底。 与PDMS构件的弹性变形相比，由于聚合物膜在压力下的塑性变形，聚合物膜被转移到基底。 因此，在从衬底移除衬垫时，PDMS构件从聚合物层拉开，从而将聚合物层沉积在衬底上。

公开(公告)号：US06860956B2

公开(公告)日：2005-03-01

申请号：US10444505

申请日：2003-05-23

申请人： Lirong Bao ,  Li Tan ,  Xudong Huang ,  Yen Peng Kong ,  Lingjie Jay Guo ,  Stella W. Pang ,  Albert Yee

发明人： Lirong Bao ,  Li Tan ,  Xudong Huang ,  Yen Peng Kong ,  Lingjie Jay Guo ,  Stella W. Pang ,  Albert Yee

IPC分类号： B05D3/10 ,  B29C33/00 ,  B44C1/165 ,  B44C3/08 ,  C03C17/30 ,  G03F20060101 ,  G03F7/00 ,  B32B31/20

CPC分类号： G03F7/0002 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00

摘要： Methods of creating patterns on substrates are presented, and articles of manufacture resulting therefrom. One method comprises applying a first surface energy modifier to an applicator to form a coating on the applicator; contacting the coating with a receiving member, the receiving member having a topography, the coating only contacting and remaining on at least some protrusions; exposing the first modified receiving member to a second surface energy modifier, thereby forming a second modified receiving member having surface modified recesses; applying a composition comprising a polymeric material to the second modified receiving member, the composition substantially conforming to the topography of the surface modified protrusions and the surface modified recesses; and contacting the composition-coated, surface modified protrusions with a substrate for a time and under conditions sufficient to transfer the polymeric material on protrusions to the substrate. Because the surface energy of the sidewalls is lower than that on the protrusions, polymer dewetting from the sidewalls is promoted, which makes the polymer film discontinuous along the edges of patterns. Therefore, inked polymer patterns from the protrusions of the mold show very smooth edges and smaller dimensions compared to that of the mold.

摘要翻译： 提出了在基板上产生图案的方法以及由此产生的制品。 一种方法包括将第一表面能量调节剂施加到施用器以在施用器上形成涂层; 使所述涂层与接收构件接触，所述接收构件具有形貌，所述涂层仅接触并保留在至少一些突起上; 将第一改进的接收构件暴露于第二表面能改变器，由此形成具有表面改性凹槽的第二改进的接收构件; 将包含聚合物材料的组合物施加到所述第二改性接收构件，所述组合物基本上符合所述表面改性突起和所述表面改性凹槽的形貌; 并且将组合物涂覆的表面改性突起与衬底接触足以将聚合物材料在突起上转移到衬底上的时间和条件下。 由于侧壁的表面能低于突起上的表面能，因此促进了从侧壁的聚合物去湿，这使得聚合物膜沿着图案的边缘不连续。 因此，与模具相比，来自模具的凸起的上色聚合物图案显示出非常光滑的边缘和更小的尺寸。

公开(公告)号：US06429458B1

公开(公告)日：2002-08-06

申请号：US09628905

申请日：2000-07-31

申请人： Jason W. Weigold ,  Stella W. Pang

发明人： Jason W. Weigold ,  Stella W. Pang

IPC分类号： H01L27108

CPC分类号： B81C1/00246 ,  B81B2201/0271 ,  B81C2201/0136 ,  B81C2203/0735

摘要： A monolithic sensor including a doped mechanical structure is movably supported by but electrically isolated from a single crystal semiconductor substrate of the sensor through a relatively simple process. The sensor is preferably made from a single crystal silicon substrate using front-side release etch-diffusion. Thick single crystal Si micromechanical devices are combined with a conventional bipolar complimentary metal oxide semiconductor (BiCMOS) integrated circuit process. This merged process allows the integration of Si mechanical resonators as thick as 15 &mgr;m thick or more with any conventional integrated circuit process with the addition of only a single masking step. The process does not require the use of Si on insulator wafers or any type of wafer bonding. The Si resonators are etched in an inductively coupled plasma source which allows deep trenches to be fabricated with high aspect ratios and smooth sidewall surfaces. Clamped-clamped beam Si resonators 500 &mgr;m long, 5 &mgr;m wide, and 11 &mgr;m thick are disclosed. A typical resonator had a resonance frequency of 28.9 kHz and an amplitude of vibration at resonance of 4.6 &mgr;m in air. Working NMOS transistors are fabricated on the same chip as the resonator with measured threshold voltages of 0.6 V and an output conductance of 2.0×10−5&OHgr;−1 for a gage voltage of 4 V.

摘要翻译： 包括掺杂机械结构的单片传感器通过相对简单的过程可移动地支撑，但是与传感器的单晶半导体衬底电隔离。 该传感器优选由使用前侧释放蚀刻扩散的单晶硅衬底制成。 厚单晶Si微机械器件与传统的双极互补金属氧化物半导体（BiCMOS）集成电路工艺相结合。 这种合并过程允许将Si机械谐振器与任何传统的集成电路过程一体化，厚度为15μm或更大，仅添加单个掩蔽步骤。 该方法不需要使用绝缘体上硅晶片或任何类型的晶片接合。 Si谐振器在电感耦合等离子体源中蚀刻，其允许以高纵横比和平滑的侧壁表面制造深沟槽。 公开了500毫米长，5微米宽和11微米厚的夹紧夹紧光束Si谐振器。 典型的谐振器的共振频率为28.9kHz，共振振幅在空气中为4.6mum。 工作的NMOS晶体管制造在与谐振器相同的芯片上，测量的阈值电压为0.6 V，输出电导率为2.0x10-5OMEGA-1，表示电压为4 V.

公开(公告)号：US6136630A

公开(公告)日：2000-10-24

申请号：US325204

申请日：1999-06-03

申请人： Jason W. Weigold ,  Stella W. Pang

发明人： Jason W. Weigold ,  Stella W. Pang

IPC分类号： B81B3/00 ,  H01L21/00

CPC分类号： B81C1/00246 ,  B81B2201/0271 ,  B81C2201/0136 ,  B81C2203/0735

摘要： A monolithic sensor including a doped mechanical structure is movably supported by but electrically isolated from a single crystal semiconductor substrate of the sensor through a relatively simple process. The sensor is preferably made from a single crystal silicon substrate using front-side release etch-diffusion. Thick single crystal Si micromechanical devices are combined with a conventional bipolar complimentary metal oxide semiconductor (BiCMOS) integrated circuit process. This merged process allows the integration of Si mechanical resonators as thick as 15 .mu.m thick or more with any conventional integrated circuit process with the addition of only a single masking step. The process does not require the use of Si on insulator wafers or any type of wafer bonding. The Si resonators are etched in an inductively coupled plasma source which allows deep trenches to be fabricated with high aspect ratios and smooth sidewall surfaces. Clamped-clamped beam Si resonators 500 .mu.m long, 5 .mu.m wide, and 11 .mu.m thick are disclosed. A typical resonator had a resonance frequency of 28.9 kHz and an amplitude of vibration at resonance of 4.6 .mu.m in air. Working NMOS transistors are fabricated on the same chip as the resonator with measured threshold voltages of 0.6 V and an output conductance of 2.0.times.10.sup.-5 .OMEGA..sup.-1 for a gage voltage of 4 V.

摘要翻译： 包括掺杂机械结构的单片传感器通过相对简单的过程可移动地支撑，但是与传感器的单晶半导体衬底电隔离。 该传感器优选由使用前侧释放蚀刻扩散的单晶硅衬底制成。 厚单晶Si微机械器件与传统的双极互补金属氧化物半导体（BiCMOS）集成电路工艺相结合。 这种合并过程允许将Si机械谐振器与任何传统的集成电路工艺一样厚到15微米或更厚，只加上一个掩蔽步骤。 该方法不需要使用绝缘体上硅晶片或任何类型的晶片接合。 Si谐振器在电感耦合等离子体源中蚀刻，其允许以高纵横比和平滑的侧壁表面制造深沟槽。 公开了长500米，宽5微米，厚11微米的夹紧束式Si共振器。 典型的谐振器的共振频率为28.9kHz，共振振幅为4.6μm。 工作的NMOS晶体管制造在与谐振器相同的芯片上，其测量的阈值电压为0.6V，输出电导为2.0×10-5ΩEGA-1，对于量具电压为4V。

公开(公告)号：US06914220B2

公开(公告)日：2005-07-05

申请号：US10396929

申请日：2003-03-25

申请人： Wei-Cheng Tian ,  Stella W. Pang ,  Edward T. Zellers

发明人： Wei-Cheng Tian ,  Stella W. Pang ,  Edward T. Zellers

IPC分类号： F27B17/00 ,  F27D11/00 ,  H05B3/26 ,  F27B11/02

CPC分类号： F27B17/0025 ,  H05B3/26 ,  H05B2203/003 ,  H05B2203/005 ,  H05B2203/007 ,  H05B2203/013 ,  H05B2203/017

摘要： A microelectromechanical heating apparatus and fluid preconcentrator device utilizing same wherein heating elements of the apparatus are sized and spaced to substantially uniformly heat a heating chamber within a heater of the apparatus. Tall, thermally-isolated heating elements are fabricated in Si using high aspect ratio etching technology. These tall heating elements have large surface area to provide large adsorbent capacity needed for high efficiency preconcentrators in a micro gas chromatography system (μGC). The tall heating elements are surrounded by air gaps to provide good thermal isolation, which is important for a low power preconcentrator in the μGC system.

摘要翻译： 一种微机电加热装置和利用其的流体预浓缩器装置，其中装置的加热元件的尺寸和间隔尺寸以基本均匀地加热装置的加热器内的加热室。 使用高纵横比蚀刻技术在Si中制造高，热隔离的加热元件。 这些高加热元件具有较大的表面积，以提供微气相色谱系统（muGC）中高效预浓缩器所需的大的吸附剂能力。 高温加热元件被气隙包围以提供良好的热隔离，这对于muGC系统中的低功率预浓缩器是重要的。

公开(公告)号：US4734152A

公开(公告)日：1988-03-29

申请号：US73905

申请日：1987-07-13

申请人： Michael W. Geis ,  Nikolay N. Efremow ,  Stella W. Pang

发明人： Michael W. Geis ,  Nikolay N. Efremow ,  Stella W. Pang

IPC分类号： H01L21/306 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/465 ,  B44C1/22 ,  C03C15/00 ,  C23F1/02

CPC分类号： H01L21/30621 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32135 ,  H01L21/32136 ,  H01L21/465

摘要： A new anisotropic dry etching system using a hot jet tube to heat and dissociate non-reactive source gas to form a directed flux of reactive specie or radicals for etching materials through openings in a resist or a reusable stencil of SiN.sub.x wherein x is in the range of 1.5 to 0.5. Si and GaAs may be etched using Cl.sub.2, F.sub.3, Br.sub.2 or SF.sub.6 source gasses. Pb or Hg, Cd, Te may be etched using n-butane, dimethyl ether or acetone as a source gas for CH.sub.3 radicals. The tube may be formed of tungsten or where fluorine is used as a source gas, an irridium tube is preferred. Alternatively, a tube formed of rhenium or an alloy of rhenium and tungsten is preferred for some applications.

摘要翻译： 一种新的各向异性干蚀刻系统，其使用热喷射管来加热和解离非反应性源气体，以形成反应物质或自由基的定向通量，以通过SiN x的抗蚀剂或可再利用的模板中的开口蚀刻材料，其中x在 为1.5〜0.5。 可以使用Cl2，F3，Br2或SF6源气体来蚀刻Si和GaAs。 可以使用正丁烷，二甲醚或丙酮作为CH3自由基的源气体来蚀刻Pb或Hg，Cd，Te。 管可以由钨形成或者使用氟作为原料气体，优选为铱管。 或者，对于一些应用，优选由铼或铼和钨的合金形成的管。