发明授权
- 专利标题： Semiconductor device and method of manufacturing the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US929056申请日： 1986-11-10
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公开(公告)号： US4788582A公开(公告)日： 1988-11-29
- 发明人: Hideaki Yamamoto , Koichi Seki , Toshihiro Tanaka , Akira Sasano , Toshihisa Tsukada , Yasuharu Shimomoto , Toshio Nakano , Hideto Kanamori
- 申请人： Hideaki Yamamoto , Koichi Seki , Toshihiro Tanaka , Akira Sasano , Toshihisa Tsukada , Yasuharu Shimomoto , Toshio Nakano , Hideto Kanamori
- 申请人地址： JPX Tokyo
- 专利权人： Hitachi, Ltd.
- 当前专利权人： Hitachi, Ltd.
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX57-220641 19821216
- 主分类号： H01L31/10
- IPC分类号： H01L31/10 ; H01L27/14 ; H01L31/0216 ; H01L31/0224 ; H01L31/04 ; H01L31/18 ; H01L31/20 ; H01L23/48 ; H01L29/04 ; H01L45/00
摘要：
A semiconductor device such as a solar cell, photodiode and solid state imaging device comprises a semiconductor layer made of amorphous silicon formed on a given substrate, and a transparent conductive layer formed by an interfacial reaction between the amorphous silicon and a metallic film directly formed on the amorphous silicon. This transparent conductive layer is used as a transparent electrode of the device and if necessary the remainder after having partially removed the metallic film for the transparent conductive layer is used as a conductive layer and right shielding film.
公开/授权文献
- US4202475A Method and apparatus for cutting optical fibers 公开/授权日：1980-05-13
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