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    Method of producing a photoelectric conversion layer
    4.
    发明授权
    Method of producing a photoelectric conversion layer 失效
    光电转换层的制造方法

    公开(公告)号：US4457949A

    公开(公告)日：1984-07-03

    申请号：US388619

    申请日：1982-06-15

    申请人： Yukio Takasaki ,  Yasuharu Shimomoto ,  Yasuo Tanaka ,  Akira Sasano ,  Toshihisa Tsukada

    发明人： Yukio Takasaki ,  Yasuharu Shimomoto ,  Yasuo Tanaka ,  Akira Sasano ,  Toshihisa Tsukada

    IPC分类号： H01L31/0248 ,  H01L31/08 ,  B05D3/14 ,  B05D5/12

    CPC分类号： H01J9/233 ,  H01L31/08

    摘要： A hydrogen-containing amorphous silicon layer is formed on a substrate held below 200.degree. C., in a plasma atmosphere, whereupon the plasma is stopped and the layer is heated in a temperature range of 200.degree. C.-400.degree. C. without cooling the substrate. The saturation field for photocurrent of electrons or holes can be made low. In case of using electrons as major carriers, preferably the heating temperature is set in a temperature range of 200.degree. C.-240.degree. C., and in case of using holes as major carriers, preferably it is set in a range of 270.degree. C.-400.degree. C.

    摘要翻译： 在等离子体气氛中，在200℃以下的基板上形成含氢非晶硅层，停止等离子体，在200〜400℃的温度范围内加热该层 底物。 可以使电子或空穴的光电流的饱和场低。 在使用电子作为主要载体的情况下，优选将加热温度设定在200℃-240℃的温度范围内，在使用空穴作为主要载体的情况下，优选设定在270℃ C.-400℃

    Method of manufacturing photosensors
    5.
    发明授权
    Method of manufacturing photosensors 失效
    制造光电传感器的方法

    公开(公告)号：US4412900A

    公开(公告)日：1983-11-01

    申请号：US357076

    申请日：1982-03-11

    申请人： Yasuo Tanaka ,  Akira Sasano ,  Toshihisa Tsukada ,  Yasuharu Shimomoto

    发明人： Yasuo Tanaka ,  Akira Sasano ,  Toshihisa Tsukada ,  Yasuharu Shimomoto

    IPC分类号： H01L31/10 ,  H01L27/146 ,  C23C15/00

    CPC分类号： H01L27/14665 ,  H01L27/14603 ,  H01L27/14621 ,  H01L27/14692

    摘要： A method of manufacturing photosensors is disclosed which comprises the steps of forming a photo-conductor film made chiefly of silicon and containing hydrogen on a desired substrate, forming a transparent conductive film on the photo-conductor film by sputtering, and heating the photosensor having the sputtered transparent conductive film at least at 140.degree. C. and not higher than 280.degree. C. The heat treatment is performed preferably at a temperature between 170.degree. to 250.degree. C., at which greater effect will be provided. This heat treatment remarkably improves the photo-response speed.

    摘要翻译： 公开了一种制造光电传感器的方法，其包括以下步骤：在期望的衬底上形成主要由硅构成并含有氢的光导体膜，通过溅射在光致导体膜上形成透明导电膜，并加热具有 溅射的透明导电膜至少在140℃且不高于280℃。优选在170-250℃的温度下进行热处理，在该温度下将提供更大的效果。 这种热处理显着提高了光响应速度。

    Photosensor with diode array
    6.
    发明授权
    Photosensor with diode array 失效
    带二极管阵列的光电传感器

    公开(公告)号：US4495409A

    公开(公告)日：1985-01-22

    申请号：US348669

    申请日：1982-02-16

    申请人： Toru Baji ,  Naohiko Koizumi ,  Toshihisa Tsukada ,  Hideaki Yamamoto ,  Yasuharu Shimomoto ,  Yasuo Tanaka

    发明人： Toru Baji ,  Naohiko Koizumi ,  Toshihisa Tsukada ,  Hideaki Yamamoto ,  Yasuharu Shimomoto ,  Yasuo Tanaka

    IPC分类号： H01L27/146 ,  H04N1/031 ,  H04N1/193 ,  H01J40/14

    CPC分类号： H04N1/031 ,  H01L27/14643 ,  H01L27/14665 ,  H04N1/1931

    摘要： A photosensor comprising an array of a plurality of unit picture elements each of which is constituted by a serial connection of a photoconductor film and a diode or a combination of a photodiode and a diode connected in series to the photodiode in the opposite rectifying direction, wherein the plurality of unit picture elements being divided into at least two groups, the unit picture elements belonging to the respective groups being connected to corresponding first group of wiring conductors provided in association with the groups, respectively, while the unit picture elements belonging to the different groups and located at same positions in the different groups relative to one another are connected together to respective second group of wiring conductors, including a first biasing controller for applying a voltage to the first group of wiring conductor connected to the picture element from which a signal is to be read out, the voltage serving for biasing forward the diode of the picture element to be read out, while no forward bias voltage is applied to the first group of wiring conductors connected to the unit picture elements from which signals are not to be read out; and a second biasing controller provided for one of the second group of wiring conductor connected to the unit picture element to be read out for grounding or biasing forward the diode of the picture element to be read out through a capacitance, whereby electric charges stored at nodes located between the photoconductor films and the diodes or between the photodiodes and the diodes, respectively, are sequentially read out as signals.

    摘要翻译： 一种光电传感器，包括多个单元图像的阵列，每个单元图像元素由感光体膜和二极管的串联连接构成，或者在相反的整流方向上与光电二极管串联连接的二极管的组合，其中 多个单位图像元素被划分为至少两组，属于各组的单位图像元素分别连接到与组相关联地设置的相应的第一组布线导体，而属于不同组的单位图像元素 并且相对于彼此位于不同组中的相同位置处连接到相应的第二组布线导体，包括用于向连接到图像元件的第一组布线导体施加电压的第一偏置控制器， 要读出，用于偏压图像的二极管的电压 同时没有正向偏置电压施加到连接到不读出信号的单元图像的第一组布线导体; 以及第二偏置控制器，被设置为连接到要读出的单元像素的第二组布线导体中的一个，用于通过电容接地或偏置要读出的像素的二极管，从而存储在节点 分别位于光电导体膜和二极管之间或者位于光电二极管和二极管之间的光信号作为信号被依次读出。

    Thin film transistor substrate, manufacturing method thereof, liquid crystal display panel and liquid crystal display equipment
    7.
    发明授权
    Thin film transistor substrate, manufacturing method thereof, liquid crystal display panel and liquid crystal display equipment 失效
    薄膜晶体管基板，其制造方法，液晶显示面板和液晶显示设备

    公开(公告)号：US5889573A

    公开(公告)日：1999-03-30

    申请号：US928719

    申请日：1997-09-12

    申请人： Hideaki Yamamoto ,  Haruo Matsumaru ,  Yasuo Tanaka ,  Ken Tsutsui ,  Toshihisa Tsukada ,  Kazuo Shirahashi ,  Akira Sasano ,  Yuka Matsukawa

    发明人： Hideaki Yamamoto ,  Haruo Matsumaru ,  Yasuo Tanaka ,  Ken Tsutsui ,  Toshihisa Tsukada ,  Kazuo Shirahashi ,  Akira Sasano ,  Yuka Matsukawa

    IPC分类号： G02F1/1343 ,  G02F1/1345 ,  G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  G09F9/30 ,  G09G3/36 ,  H01L21/3205 ,  H01L21/336 ,  H01L27/12 ,  H01L29/49 ,  H01L29/78 ,  H01L29/786 ,  H01L29/04

    CPC分类号： G02F1/136286 ,  G02F1/1345 ,  G02F1/136213 ,  H01L29/4908 ,  H01L2924/0002

    摘要： The present invention concerns an active-matrix addressed TFT substrate using a thin film transistor, a manufacturing method and an anodic oxidation method thereof, a liquid crystal display panel using the TFT substrate and a liquid crystal display equipment using the liquid crystal display panel and, more in particular, it relates to a structure and a manufacturing method which enables to improve the characteristics thereof.In the present invention, Cr or Ta is used for gate terminals, aluminum or a metal mainly composed of aluminum is used for gate bus-lines extended therefrom, gate electrodes and thin film capacitances (additional capacitance, storage capacitance) and an anodic oxidized film composed of the metal and free from defect is used for at least one of gate insulators, dielectric films of the thin film capacitances and interlayer insulation films for the intersections between the bus-lines. In a more preferred structure, the anodic oxidized film is used for all of the gate insulators, the dielectric films for the thin film capacitances and the interlayer insulation films for the intersections between the bus-lines.The present invention also relates to a method of selectively forming an anodic oxidized film on an aluminum pattern. That is, in a case of forming a selective oxidation mask to a desired region on the aluminum pattern with a positive type photoresist, in the present invention, an angle (.theta.) formed between the selective oxidation mask and the aluminum pattern is made as: .theta..gtoreq.110-20T (T: film thickness of the positive type photoresist).

    摘要翻译： 本发明涉及使用薄膜晶体管的有源矩阵寻址TFT基板，其制造方法和阳极氧化方法，使用TFT基板的液晶显示面板和使用该液晶显示面板的液晶显示设备， 更具体地，涉及能够改善其特性的结构和制造方法。 在本发明中，Cr或Ta用于栅极端子，铝或主要由铝组成的金属用于从其延伸的栅极总线，栅电极和薄膜电容（附加电容，存储电容）和阳极氧化膜 由金属构成并且没有缺陷用于栅极绝缘体，薄膜电容的介电膜和用于总线之间的交叉点的层间绝缘膜中的至少一个。 在更优选的结构中，阳极氧化膜用于所有栅极绝缘体，用于薄膜电容的介电膜和用于总线之间的交叉点的层间绝缘膜。 本发明还涉及在铝图案上选择性地形成阳极氧化膜的方法。 也就是说，在使用正型光致抗蚀剂在铝图案上的期望区域上形成选择性氧化掩模的情况下，在本发明中，在选择性氧化掩模和铝图案之间形成的角度（θ）为： θ= 110-20T（T：正型光致抗蚀剂的膜厚度）。

    Thin film transistor substrate, liquid crystal display panel and liquid crystal display equipment
    8.
    发明授权
    Thin film transistor substrate, liquid crystal display panel and liquid crystal display equipment 失效
    薄膜晶体管基板，液晶显示面板和液晶显示设备

    公开(公告)号：US5359206A

    公开(公告)日：1994-10-25

    申请号：US674328

    申请日：1991-04-15

    申请人： Hideaki Yamamoto ,  Haruo Matsumaru ,  Yasuo Tanaka ,  Ken Tsutsui ,  Toshihisa Tsukada ,  Kazuo Shirahashi ,  Akira Sasano ,  Yuka Matsukawa

    发明人： Hideaki Yamamoto ,  Haruo Matsumaru ,  Yasuo Tanaka ,  Ken Tsutsui ,  Toshihisa Tsukada ,  Kazuo Shirahashi ,  Akira Sasano ,  Yuka Matsukawa

    IPC分类号： G02F1/1343 ,  G02F1/1345 ,  G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  G09F9/30 ,  G09G3/36 ,  H01L21/3205 ,  H01L21/336 ,  H01L27/12 ,  H01L29/49 ,  H01L29/78 ,  H01L29/786 ,  H01L29/04 ,  H01L23/48 ,  H01L27/01 ,  H01L31/036

    CPC分类号： G02F1/136286 ,  G02F1/1345 ,  G02F1/136213 ,  H01L29/4908 ,  H01L2924/0002

    摘要： Disclosed is an active-matrix addressed TFT substrate using a thin film transistor, a manufacturing method and an anodic oxidation method thereof, a liquid crystal display panel using the TFT substrate and a liquid crystal display equipment using the liquid crystal display panel. In the TFT substrate, Cr or Ta is used for gate terminals, aluminum or a metal mainly composed of aluminum is used for gate bus-lines extending therefrom, for gate electrodes, and for electrodes of thin film capacitors (additional capacitance, storage capacitance), and an anodic oxidized film composed of the metal and free from defect is used for at least one of gate insulators, dielectric films of the thin film capacitances and interlayer insulating films for the intersections between the bus-lines. Also disclosed is a method of selectively forming an anodic oxidized film on an aluminum pattern. That is, in a case of forming a selective oxidation mask to a desired region on the aluminum pattern with a positive type photoresist, in the present invention, an angle (.theta.) formed between the selective oxidation mask and the aluminum pattern is made as: .theta..gtoreq.110-20T (T: film thickness of the positive type photoresist).

    摘要翻译： PCT No.PCT / JP90 / 01039 Sec。 371日期：1991年4月15日 102（e）日期1991年4月15日PCT提交1990年8月13日PCT公布。 WO91 / 02999 PCT出版物 1991年3月7日公开。公开是使用薄膜晶体管的有源矩阵寻址TFT基板，其制造方法和阳极氧化方法，使用TFT基板的液晶显示面板和使用液体的液晶显示设备 水晶显示面板。 在TFT基板中，使用Cr或Ta作为栅极端子，铝或主要由铝构成的金属用于从栅极电极延伸的栅极总线，以及用于薄膜电容器的电极（附加电容，存储电容） 并且由金属构成并且没有缺陷的阳极氧化膜用于栅极绝缘体，薄膜电容的介电膜和用于总线之间的交叉点的层间绝缘膜中的至少一种。 还公开了在铝图案上选择性地形成阳极氧化膜的方法。 也就是说，在使用正型光致抗蚀剂在铝图案上的期望区域上形成选择性氧化掩模的情况下，在本发明中，在选择性氧化掩模和铝图案之间形成的角度（θ）为： θ= 110-20T（T：正型光致抗蚀剂的膜厚度）。

    Photosensor
    10.
    发明授权
    Photosensor 失效
    光电传感器

    公开(公告)号：US4855795A

    公开(公告)日：1989-08-08

    申请号：US898540

    申请日：1986-08-21

    申请人： Hideaki Yamamoto ,  Akira Sasano ,  Haruo Matsumaru ,  Yasuo Tanaka ,  Toshihisa Tsukada

    发明人： Hideaki Yamamoto ,  Akira Sasano ,  Haruo Matsumaru ,  Yasuo Tanaka ,  Toshihisa Tsukada

    IPC分类号： H01L27/14 ,  H01L27/146 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/09 ,  H01L31/20 ,  H04N1/028

    CPC分类号： H01L27/14665 ,  H01L31/0216 ,  H01L31/022466 ,  H01L31/095 ,  H01L31/202 ,  Y02E10/50 ,  Y02P70/521

    摘要： A photosensor comprises an insulating substrate, an electrode, a photoconductor layer composed of a hydrogenated amorphous silicon semiconductor layer obtained by the glow discharge decomposition of monosilane gas, a junction stabilizing layer composed of a boron-containing hydrogenated amorphous silicon semiconductor which is obtained by the glow discharge decomposition of a mixed gas of monosilane and diborane, a transparent electrode and a transparent protective layer, these elements being laminated in that order. The insertion of the junction stabilizing layer between the photoconductor layer and the transparent electrode greatly improves the dark current characteristic. The electrode, the photoconductor layer and the junction stabilizing layer can be divided in correspondence with each picture element, thereby improving the resolution of the photosensor.

    摘要翻译： 光传感器包括绝缘基板，电极，由通过单硅烷气体的辉光放电分解获得的氢化非晶硅半导体层构成的感光体层，由含硼氢化非晶硅半导体构成的结稳定层，其由 甲硅烷和乙硼烷的混合气体的辉光放电分解，透明电极和透明保护层，这些元素按顺序层压。 在光电导体层和透明电极之间插入结稳定层极大地改善了暗电流特性。 电极，光电导体层和结稳定层可以与每个像素对应地划分，从而提高光传感器的分辨率。