公开(公告)号：US5151385A

公开(公告)日：1992-09-29

申请号：US252144

申请日：1988-10-03

申请人： Hideaki Yamamoto ,  Koichi Seki ,  Toshihiro Tanaka ,  Akira Sasano ,  Toshihisa Tsukada ,  Yasuharu Shimomoto ,  Toshio Nakano ,  Hideto Kanamori

发明人： Hideaki Yamamoto ,  Koichi Seki ,  Toshihiro Tanaka ,  Akira Sasano ,  Toshihisa Tsukada ,  Yasuharu Shimomoto ,  Toshio Nakano ,  Hideto Kanamori

IPC分类号： H01L31/10 ,  H01L27/14 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/04 ,  H01L31/18 ,  H01L31/20

CPC分类号： H01L31/022466 ,  H01L24/24 ,  H01L31/02164 ,  H01L31/1884 ,  H01L31/202 ,  H01L2924/12032 ,  H01L2924/12043 ,  Y02E10/50 ,  Y02P70/521 ,  Y10S148/147

摘要： A semiconductor device such as a solar cell, photodiode and solid state imaging device comprises a semiconductor layer made of amorphous silicon formed on a given substrate, and a transparent conductive layer formed by an interfacial reaction between the amorphous silicon and a metallic film directly formed on the amorphous silicon. This transparent conductive layer is used as a transparent electrode of the device and if necessary the remainder after having partially removed the metallic film for the transparent conductive layer is used as a conductive layer and light shielding film.

公开(公告)号：US4788582A

公开(公告)日：1988-11-29

申请号：US929056

申请日：1986-11-10

申请人： Hideaki Yamamoto ,  Koichi Seki ,  Toshihiro Tanaka ,  Akira Sasano ,  Toshihisa Tsukada ,  Yasuharu Shimomoto ,  Toshio Nakano ,  Hideto Kanamori

发明人： Hideaki Yamamoto ,  Koichi Seki ,  Toshihiro Tanaka ,  Akira Sasano ,  Toshihisa Tsukada ,  Yasuharu Shimomoto ,  Toshio Nakano ,  Hideto Kanamori

IPC分类号： H01L31/10 ,  H01L27/14 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/04 ,  H01L31/18 ,  H01L31/20 ,  H01L23/48 ,  H01L29/04 ,  H01L45/00

CPC分类号： H01L31/022466 ,  H01L24/24 ,  H01L31/02164 ,  H01L31/1884 ,  H01L31/202 ,  H01L2924/12032 ,  H01L2924/12043 ,  Y02E10/50 ,  Y02P70/521 ,  Y10S148/147

摘要： A semiconductor device such as a solar cell, photodiode and solid state imaging device comprises a semiconductor layer made of amorphous silicon formed on a given substrate, and a transparent conductive layer formed by an interfacial reaction between the amorphous silicon and a metallic film directly formed on the amorphous silicon. This transparent conductive layer is used as a transparent electrode of the device and if necessary the remainder after having partially removed the metallic film for the transparent conductive layer is used as a conductive layer and right shielding film.

摘要翻译： 诸如太阳能电池，光电二极管和固态成像装置的半导体器件包括由给定衬底上形成的非晶硅制成的半导体层和由非晶硅与直接形成在金属膜上的金属膜之间的界面反应形成的透明导电层 非晶硅。 该透明导电层用作器件的透明电极，如果需要，部分除去用于透明导电层的金属膜之后的剩余部分用作导电层和右屏蔽膜。

公开(公告)号：US4430185A

公开(公告)日：1984-02-07

申请号：US245749

申请日：1981-03-20

申请人： Yasuharu Shimomoto ,  Toshihisa Tsukada ,  Akira Sasano ,  Yasuo Tanaka ,  Hideaki Yamamoto ,  Yukio Takasaki

发明人： Yasuharu Shimomoto ,  Toshihisa Tsukada ,  Akira Sasano ,  Yasuo Tanaka ,  Hideaki Yamamoto ,  Yukio Takasaki

IPC分类号： C23C14/00 ,  C23C16/509 ,  H01L27/146 ,  H01L31/20 ,  H04N5/335 ,  H04N5/357 ,  H04N5/369 ,  H04N5/372 ,  H04N5/374 ,  C23C15/00

CPC分类号： C23C14/0036 ,  C23C16/5096 ,  H01L27/14665 ,  H01L31/202 ,  Y02E10/50 ,  Y02P70/521

摘要： In the method of producing photoelectric transducers having processes for forming a photoconductive layer on a predetermined substrate with an irregular surface by a method of depositing the photoconductive layer in the atmosphere including at least plasma, the predetermined substrate with irregular surface is disposed above a first electrode to which an electrode is opposed, and said photoconductive layer is formed while a negative potential is being applied to the first electrode. This enables the photoconductive layer to be formed without breaks at steps, pinholes and so on due to the irregular surface, and therefore, it is possible to provide good photoelectric transducers with small dark current.

摘要翻译： 在具有通过在包括至少等离子体的气氛中沉积光电导层的方法的具有不规则表面的预定基板上形成光电导层的工艺的方法中，具有不规则表面的预定基板设置在第一电极 电极相对，并且所述光导电层形成，同时向第一电极施加负电位。 这使得光电导层由于不规则的表面而在步骤，针孔等形成而不会发生断裂，因此，可以提供具有小暗电流的良好光电传感器。

公开(公告)号：US4457949A

公开(公告)日：1984-07-03

申请号：US388619

申请日：1982-06-15

申请人： Yukio Takasaki ,  Yasuharu Shimomoto ,  Yasuo Tanaka ,  Akira Sasano ,  Toshihisa Tsukada

发明人： Yukio Takasaki ,  Yasuharu Shimomoto ,  Yasuo Tanaka ,  Akira Sasano ,  Toshihisa Tsukada

IPC分类号： H01L31/0248 ,  H01L31/08 ,  B05D3/14 ,  B05D5/12

CPC分类号： H01J9/233 ,  H01L31/08

摘要： A hydrogen-containing amorphous silicon layer is formed on a substrate held below 200.degree. C., in a plasma atmosphere, whereupon the plasma is stopped and the layer is heated in a temperature range of 200.degree. C.-400.degree. C. without cooling the substrate. The saturation field for photocurrent of electrons or holes can be made low. In case of using electrons as major carriers, preferably the heating temperature is set in a temperature range of 200.degree. C.-240.degree. C., and in case of using holes as major carriers, preferably it is set in a range of 270.degree. C.-400.degree. C.

摘要翻译： 在等离子体气氛中，在200℃以下的基板上形成含氢非晶硅层，停止等离子体，在200〜400℃的温度范围内加热该层 底物。 可以使电子或空穴的光电流的饱和场低。 在使用电子作为主要载体的情况下，优选将加热温度设定在200℃-240℃的温度范围内，在使用空穴作为主要载体的情况下，优选设定在270℃ C.-400℃

公开(公告)号：US4412900A

公开(公告)日：1983-11-01

申请号：US357076

申请日：1982-03-11

申请人： Yasuo Tanaka ,  Akira Sasano ,  Toshihisa Tsukada ,  Yasuharu Shimomoto

发明人： Yasuo Tanaka ,  Akira Sasano ,  Toshihisa Tsukada ,  Yasuharu Shimomoto

IPC分类号： H01L31/10 ,  H01L27/146 ,  C23C15/00

CPC分类号： H01L27/14665 ,  H01L27/14603 ,  H01L27/14621 ,  H01L27/14692

摘要： A method of manufacturing photosensors is disclosed which comprises the steps of forming a photo-conductor film made chiefly of silicon and containing hydrogen on a desired substrate, forming a transparent conductive film on the photo-conductor film by sputtering, and heating the photosensor having the sputtered transparent conductive film at least at 140.degree. C. and not higher than 280.degree. C. The heat treatment is performed preferably at a temperature between 170.degree. to 250.degree. C., at which greater effect will be provided. This heat treatment remarkably improves the photo-response speed.

摘要翻译： 公开了一种制造光电传感器的方法，其包括以下步骤：在期望的衬底上形成主要由硅构成并含有氢的光导体膜，通过溅射在光致导体膜上形成透明导电膜，并加热具有 溅射的透明导电膜至少在140℃且不高于280℃。优选在170-250℃的温度下进行热处理，在该温度下将提供更大的效果。 这种热处理显着提高了光响应速度。

公开(公告)号：US5889573A

公开(公告)日：1999-03-30

申请号：US928719

申请日：1997-09-12

申请人： Hideaki Yamamoto ,  Haruo Matsumaru ,  Yasuo Tanaka ,  Ken Tsutsui ,  Toshihisa Tsukada ,  Kazuo Shirahashi ,  Akira Sasano ,  Yuka Matsukawa

发明人： Hideaki Yamamoto ,  Haruo Matsumaru ,  Yasuo Tanaka ,  Ken Tsutsui ,  Toshihisa Tsukada ,  Kazuo Shirahashi ,  Akira Sasano ,  Yuka Matsukawa

IPC分类号： G02F1/1343 ,  G02F1/1345 ,  G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  G09F9/30 ,  G09G3/36 ,  H01L21/3205 ,  H01L21/336 ,  H01L27/12 ,  H01L29/49 ,  H01L29/78 ,  H01L29/786 ,  H01L29/04

CPC分类号： G02F1/136286 ,  G02F1/1345 ,  G02F1/136213 ,  H01L29/4908 ,  H01L2924/0002

摘要： The present invention concerns an active-matrix addressed TFT substrate using a thin film transistor, a manufacturing method and an anodic oxidation method thereof, a liquid crystal display panel using the TFT substrate and a liquid crystal display equipment using the liquid crystal display panel and, more in particular, it relates to a structure and a manufacturing method which enables to improve the characteristics thereof.In the present invention, Cr or Ta is used for gate terminals, aluminum or a metal mainly composed of aluminum is used for gate bus-lines extended therefrom, gate electrodes and thin film capacitances (additional capacitance, storage capacitance) and an anodic oxidized film composed of the metal and free from defect is used for at least one of gate insulators, dielectric films of the thin film capacitances and interlayer insulation films for the intersections between the bus-lines. In a more preferred structure, the anodic oxidized film is used for all of the gate insulators, the dielectric films for the thin film capacitances and the interlayer insulation films for the intersections between the bus-lines.The present invention also relates to a method of selectively forming an anodic oxidized film on an aluminum pattern. That is, in a case of forming a selective oxidation mask to a desired region on the aluminum pattern with a positive type photoresist, in the present invention, an angle (.theta.) formed between the selective oxidation mask and the aluminum pattern is made as: .theta..gtoreq.110-20T (T: film thickness of the positive type photoresist).

摘要翻译： 本发明涉及使用薄膜晶体管的有源矩阵寻址TFT基板，其制造方法和阳极氧化方法，使用TFT基板的液晶显示面板和使用该液晶显示面板的液晶显示设备， 更具体地，涉及能够改善其特性的结构和制造方法。 在本发明中，Cr或Ta用于栅极端子，铝或主要由铝组成的金属用于从其延伸的栅极总线，栅电极和薄膜电容（附加电容，存储电容）和阳极氧化膜 由金属构成并且没有缺陷用于栅极绝缘体，薄膜电容的介电膜和用于总线之间的交叉点的层间绝缘膜中的至少一个。 在更优选的结构中，阳极氧化膜用于所有栅极绝缘体，用于薄膜电容的介电膜和用于总线之间的交叉点的层间绝缘膜。 本发明还涉及在铝图案上选择性地形成阳极氧化膜的方法。 也就是说，在使用正型光致抗蚀剂在铝图案上的期望区域上形成选择性氧化掩模的情况下，在本发明中，在选择性氧化掩模和铝图案之间形成的角度（θ）为： θ= 110-20T（T：正型光致抗蚀剂的膜厚度）。

公开(公告)号：US5359206A

公开(公告)日：1994-10-25

申请号：US674328

申请日：1991-04-15

申请人： Hideaki Yamamoto ,  Haruo Matsumaru ,  Yasuo Tanaka ,  Ken Tsutsui ,  Toshihisa Tsukada ,  Kazuo Shirahashi ,  Akira Sasano ,  Yuka Matsukawa

发明人： Hideaki Yamamoto ,  Haruo Matsumaru ,  Yasuo Tanaka ,  Ken Tsutsui ,  Toshihisa Tsukada ,  Kazuo Shirahashi ,  Akira Sasano ,  Yuka Matsukawa

IPC分类号： G02F1/1343 ,  G02F1/1345 ,  G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  G09F9/30 ,  G09G3/36 ,  H01L21/3205 ,  H01L21/336 ,  H01L27/12 ,  H01L29/49 ,  H01L29/78 ,  H01L29/786 ,  H01L29/04 ,  H01L23/48 ,  H01L27/01 ,  H01L31/036

CPC分类号： G02F1/136286 ,  G02F1/1345 ,  G02F1/136213 ,  H01L29/4908 ,  H01L2924/0002

摘要： Disclosed is an active-matrix addressed TFT substrate using a thin film transistor, a manufacturing method and an anodic oxidation method thereof, a liquid crystal display panel using the TFT substrate and a liquid crystal display equipment using the liquid crystal display panel. In the TFT substrate, Cr or Ta is used for gate terminals, aluminum or a metal mainly composed of aluminum is used for gate bus-lines extending therefrom, for gate electrodes, and for electrodes of thin film capacitors (additional capacitance, storage capacitance), and an anodic oxidized film composed of the metal and free from defect is used for at least one of gate insulators, dielectric films of the thin film capacitances and interlayer insulating films for the intersections between the bus-lines. Also disclosed is a method of selectively forming an anodic oxidized film on an aluminum pattern. That is, in a case of forming a selective oxidation mask to a desired region on the aluminum pattern with a positive type photoresist, in the present invention, an angle (.theta.) formed between the selective oxidation mask and the aluminum pattern is made as: .theta..gtoreq.110-20T (T: film thickness of the positive type photoresist).

摘要翻译： PCT No.PCT / JP90 / 01039 Sec。 371日期：1991年4月15日 102（e）日期1991年4月15日PCT提交1990年8月13日PCT公布。 WO91 / 02999 PCT出版物 1991年3月7日公开。公开是使用薄膜晶体管的有源矩阵寻址TFT基板，其制造方法和阳极氧化方法，使用TFT基板的液晶显示面板和使用液体的液晶显示设备 水晶显示面板。 在TFT基板中，使用Cr或Ta作为栅极端子，铝或主要由铝构成的金属用于从栅极电极延伸的栅极总线，以及用于薄膜电容器的电极（附加电容，存储电容） 并且由金属构成并且没有缺陷的阳极氧化膜用于栅极绝缘体，薄膜电容的介电膜和用于总线之间的交叉点的层间绝缘膜中的至少一种。 还公开了在铝图案上选择性地形成阳极氧化膜的方法。 也就是说，在使用正型光致抗蚀剂在铝图案上的期望区域上形成选择性氧化掩模的情况下，在本发明中，在选择性氧化掩模和铝图案之间形成的角度（θ）为： θ= 110-20T（T：正型光致抗蚀剂的膜厚度）。

公开(公告)号：US5672523A

公开(公告)日：1997-09-30

申请号：US451209

申请日：1995-05-26

申请人： Hideaki Yamamoto ,  Haruo Matsumaru ,  Yasuo Tanaka ,  Ken Tsutsui ,  Toshihisa Tsukada ,  Kazuo Shirahashi ,  Akira Sasano ,  Yuka Matsukawa

发明人： Hideaki Yamamoto ,  Haruo Matsumaru ,  Yasuo Tanaka ,  Ken Tsutsui ,  Toshihisa Tsukada ,  Kazuo Shirahashi ,  Akira Sasano ,  Yuka Matsukawa

IPC分类号： G02F1/1343 ,  G02F1/1345 ,  G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  G09F9/30 ,  G09G3/36 ,  H01L21/3205 ,  H01L21/336 ,  H01L27/12 ,  H01L29/49 ,  H01L29/78 ,  H01L29/786 ,  H01L21/84

CPC分类号： G02F1/136286 ,  G02F1/1345 ,  G02F1/136213 ,  H01L29/4908 ,  H01L2924/0002

摘要： The present invention concerns an active-matrix addressed TFT substrate using a thin film transistor, a manufacturing method and an anodic oxidation method thereof, a liquid crystal display panel using the TFT substrate and a liquid crystal display equipment using the liquid crystal display panel. Cr or Ta is used for gate terminals; aluminum or a metal composed mainly of aluminum is used for gate bus-lines extended therefrom, gate electrodes and thin film capacitances (additional capacitance, storage capacitance); and an anodic oxidized film composed of the metal and free from defect is used for at least one of gate insulators, dielectric films of the thin film capacitances and interlayer insulation films for the intersections between the bus-lines. In forming a selective oxidation mask to a desired region on the aluminum pattern with a positive type photoresist, for the anodic oxidation, an angle (.theta.) formed between the selective oxidation mask and the aluminum pattern is made as: .beta..gtoreq.110-20T(T: film thickness of the positive type photoresist). The photoresist is subjected to a heat treatment prior to and after exposure, preferably the after-treatment being performed before developing. The anodic oxidation film is heat-treated after formation, to reduce the leak current.

摘要翻译： 本发明涉及使用薄膜晶体管的有源矩阵寻址TFT基板，其制造方法和阳极氧化方法，使用该TFT基板的液晶显示面板和使用该液晶显示面板的液晶显示装置。 Cr或Ta用于栅极端子; 铝或主要由铝组成的金属用于从其延伸的栅极总线，栅电极和薄膜电容（附加电容，存储电容）; 并且由金属构成并且没有缺陷的阳极氧化膜用于栅极绝缘体，薄膜电容的介电膜和用于总线之间的交叉点的层间绝缘膜中的至少一种。 在用正型光致抗蚀剂形成选择性氧化掩模到铝图案上的所需区域时，为了阳极氧化，在选择性氧化掩模和铝图案之间形成的角度（θ）被制成： 20T（T：正型光致抗蚀剂的膜厚）。 在曝光之前和之后对光致抗蚀剂进行热处理，优选在显影之前进行后处理。 阳极氧化膜在形成后进行热处理，以减少漏电流。

公开(公告)号：US5719408A

公开(公告)日：1998-02-17

申请号：US803011

申请日：1997-02-21

申请人： Hideaki Yamamoto ,  Haruo Matsumaru ,  Yasuo Tanaka ,  Ken Tsutsui ,  Toshihisa Tsukada ,  Kazuo Shirahashi ,  Akira Sasano ,  Yuka Matsukawa

发明人： Hideaki Yamamoto ,  Haruo Matsumaru ,  Yasuo Tanaka ,  Ken Tsutsui ,  Toshihisa Tsukada ,  Kazuo Shirahashi ,  Akira Sasano ,  Yuka Matsukawa

IPC分类号： G02F1/1343 ,  G02F1/1345 ,  G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  G09F9/30 ,  G09G3/36 ,  H01L21/3205 ,  H01L21/336 ,  H01L27/12 ,  H01L29/49 ,  H01L29/78 ,  H01L29/786 ,  H01L29/04 ,  H01L27/108 ,  H01L31/036

CPC分类号： G02F1/136286 ,  G02F1/1345 ,  G02F1/136213 ,  H01L29/4908 ,  H01L2924/0002

摘要： In the present invention, Cr or Ta is used for gate terminals, aluminum or a metal mainly composed of aluminum is used for gate bus-lines extended therefrom, gate electrodes and thin film capacitances (additional capacitance, storage capacitance) and an anodic oxidized film composed of the metal and free from defect is used for at least one of gate insulators, dielectric films of the thin film capacitances and interlayer insulation films for the intersections between the bus-lines. In a more preferred structure, the anodic oxidized film is used for all of the gate insulators, the dielectric films for the thin film capacitances and the interlayer insulation films for the intersections between the bus lines. The present invention also relates to a method of selectively forming an anodic oxidized film on an aluminum pattern. That is, in a case of forming a selective oxidation mask to a desired region on the aluminum pattern with a positive type photoresist, in the present invention, an angle (.theta.) formed between the selective oxidation mask and the aluminum pattern is made as: .theta..gtoreq.110-20T (T: film thickness of the positive type photoresist).

摘要翻译： 在本发明中，Cr或Ta用于栅极端子，铝或主要由铝组成的金属用于从其延伸的栅极总线，栅电极和薄膜电容（附加电容，存储电容）和阳极氧化膜 由金属构成并且没有缺陷用于栅极绝缘体，薄膜电容的介电膜和用于总线之间的交叉点的层间绝缘膜中的至少一个。 在更优选的结构中，阳极氧化膜用于所有栅极绝缘体，用于薄膜电容的介电膜和用于总线之间的交叉点的层间绝缘膜。 本发明还涉及在铝图案上选择性地形成阳极氧化膜的方法。 也就是说，在使用正型光致抗蚀剂在铝图案上的期望区域上形成选择性氧化掩模的情况下，在本发明中，在选择性氧化掩模和铝图案之间形成的角度（θ）为： θ= 110-20T（T：正型光致抗蚀剂的膜厚度）。

公开(公告)号：US4855795A

公开(公告)日：1989-08-08

申请号：US898540

申请日：1986-08-21

申请人： Hideaki Yamamoto ,  Akira Sasano ,  Haruo Matsumaru ,  Yasuo Tanaka ,  Toshihisa Tsukada

发明人： Hideaki Yamamoto ,  Akira Sasano ,  Haruo Matsumaru ,  Yasuo Tanaka ,  Toshihisa Tsukada

IPC分类号： H01L27/14 ,  H01L27/146 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/09 ,  H01L31/20 ,  H04N1/028

CPC分类号： H01L27/14665 ,  H01L31/0216 ,  H01L31/022466 ,  H01L31/095 ,  H01L31/202 ,  Y02E10/50 ,  Y02P70/521

摘要： A photosensor comprises an insulating substrate, an electrode, a photoconductor layer composed of a hydrogenated amorphous silicon semiconductor layer obtained by the glow discharge decomposition of monosilane gas, a junction stabilizing layer composed of a boron-containing hydrogenated amorphous silicon semiconductor which is obtained by the glow discharge decomposition of a mixed gas of monosilane and diborane, a transparent electrode and a transparent protective layer, these elements being laminated in that order. The insertion of the junction stabilizing layer between the photoconductor layer and the transparent electrode greatly improves the dark current characteristic. The electrode, the photoconductor layer and the junction stabilizing layer can be divided in correspondence with each picture element, thereby improving the resolution of the photosensor.

摘要翻译： 光传感器包括绝缘基板，电极，由通过单硅烷气体的辉光放电分解获得的氢化非晶硅半导体层构成的感光体层，由含硼氢化非晶硅半导体构成的结稳定层，其由 甲硅烷和乙硼烷的混合气体的辉光放电分解，透明电极和透明保护层，这些元素按顺序层压。 在光电导体层和透明电极之间插入结稳定层极大地改善了暗电流特性。 电极，光电导体层和结稳定层可以与每个像素对应地划分，从而提高光传感器的分辨率。