公开(公告)号：US5151385A

公开(公告)日：1992-09-29

申请号：US252144

申请日：1988-10-03

申请人： Hideaki Yamamoto ,  Koichi Seki ,  Toshihiro Tanaka ,  Akira Sasano ,  Toshihisa Tsukada ,  Yasuharu Shimomoto ,  Toshio Nakano ,  Hideto Kanamori

发明人： Hideaki Yamamoto ,  Koichi Seki ,  Toshihiro Tanaka ,  Akira Sasano ,  Toshihisa Tsukada ,  Yasuharu Shimomoto ,  Toshio Nakano ,  Hideto Kanamori

IPC分类号： H01L31/10 ,  H01L27/14 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/04 ,  H01L31/18 ,  H01L31/20

CPC分类号： H01L31/022466 ,  H01L24/24 ,  H01L31/02164 ,  H01L31/1884 ,  H01L31/202 ,  H01L2924/12032 ,  H01L2924/12043 ,  Y02E10/50 ,  Y02P70/521 ,  Y10S148/147

摘要： A semiconductor device such as a solar cell, photodiode and solid state imaging device comprises a semiconductor layer made of amorphous silicon formed on a given substrate, and a transparent conductive layer formed by an interfacial reaction between the amorphous silicon and a metallic film directly formed on the amorphous silicon. This transparent conductive layer is used as a transparent electrode of the device and if necessary the remainder after having partially removed the metallic film for the transparent conductive layer is used as a conductive layer and light shielding film.

公开(公告)号：US4788582A

公开(公告)日：1988-11-29

申请号：US929056

申请日：1986-11-10

申请人： Hideaki Yamamoto ,  Koichi Seki ,  Toshihiro Tanaka ,  Akira Sasano ,  Toshihisa Tsukada ,  Yasuharu Shimomoto ,  Toshio Nakano ,  Hideto Kanamori

发明人： Hideaki Yamamoto ,  Koichi Seki ,  Toshihiro Tanaka ,  Akira Sasano ,  Toshihisa Tsukada ,  Yasuharu Shimomoto ,  Toshio Nakano ,  Hideto Kanamori

IPC分类号： H01L31/10 ,  H01L27/14 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/04 ,  H01L31/18 ,  H01L31/20 ,  H01L23/48 ,  H01L29/04 ,  H01L45/00

CPC分类号： H01L31/022466 ,  H01L24/24 ,  H01L31/02164 ,  H01L31/1884 ,  H01L31/202 ,  H01L2924/12032 ,  H01L2924/12043 ,  Y02E10/50 ,  Y02P70/521 ,  Y10S148/147

摘要： A semiconductor device such as a solar cell, photodiode and solid state imaging device comprises a semiconductor layer made of amorphous silicon formed on a given substrate, and a transparent conductive layer formed by an interfacial reaction between the amorphous silicon and a metallic film directly formed on the amorphous silicon. This transparent conductive layer is used as a transparent electrode of the device and if necessary the remainder after having partially removed the metallic film for the transparent conductive layer is used as a conductive layer and right shielding film.

摘要翻译： 诸如太阳能电池，光电二极管和固态成像装置的半导体器件包括由给定衬底上形成的非晶硅制成的半导体层和由非晶硅与直接形成在金属膜上的金属膜之间的界面反应形成的透明导电层 非晶硅。 该透明导电层用作器件的透明电极，如果需要，部分除去用于透明导电层的金属膜之后的剩余部分用作导电层和右屏蔽膜。