发明授权
- 专利标题： Semiconductor electron-current generating device having improved cathode efficiency
- 专利标题（中）： 具有改善的阴极效率的半导体电子发生器件
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申请号： US21937申请日： 1987-03-05
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公开(公告)号： US4801994A公开(公告)日： 1989-01-31
- 发明人: Gerardus G. P. Van Gorkom , Arthur M. E. Hoeberechts
- 申请人： Gerardus G. P. Van Gorkom , Arthur M. E. Hoeberechts
- 申请人地址： NY New York
- 专利权人： U.S. Philips Corporation
- 当前专利权人： U.S. Philips Corporation
- 当前专利权人地址： NY New York
- 优先权： NLX8600675 19860317
- 主分类号： H01J1/30
- IPC分类号： H01J1/30 ; H01J1/308 ; H01J29/04 ; H01J31/12 ; H01J31/38 ; H01J37/073 ; H01L21/027 ; H01L33/00 ; H01L29/12 ; H01L29/34
摘要：
By providing an intrinsic semiconductor region in a reverse biased junction cathode between an n-type surface region and a p-type zone, a maximum field is present over the intrinsic region in the operating condition. The efficiency of the cathode is increased because avalanche multiplication can now occur over a greater distance, while in addition electrons to be emitted at a sufficient energy are generated by means of tunneling.
公开/授权文献
- US6033184A Impeller arrangement in a measuring device 公开/授权日：2000-03-07
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