- 专利标题: Semiconductor integrated circuit
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申请号: US358262申请日: 1989-05-30
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公开(公告)号: US4924439A公开(公告)日: 1990-05-08
- 发明人: Katsumi Ogiue , Yukio Suzuki , Ikuro Masuda , Masanori Odaka , Hideaki Uchida
- 申请人: Katsumi Ogiue , Yukio Suzuki , Ikuro Masuda , Masanori Odaka , Hideaki Uchida
- 申请人地址: JPX Tokyo
- 专利权人: Hitachi, Ltd.
- 当前专利权人: Hitachi, Ltd.
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX59-22811 19840213
- 主分类号: G11C11/413
- IPC分类号: G11C11/413 ; G11C7/00 ; G11C7/06 ; G11C7/10 ; G11C7/12 ; G11C8/00 ; G11C8/06 ; G11C8/08 ; G11C8/10 ; G11C8/18 ; G11C11/34 ; G11C11/414 ; G11C11/417 ; H03K19/0944
摘要:
In order to provide high speed and low power consumption, a semiconductor integrated circuit is constructed to utilize both CMOS elements and bipolar transistors. The bipolar transistors are used in the output portions to take advantage of their speed of operation to allow rapid charging and discharging of output lines. In the meantime, the principal operating portions of the circuit use CMOS elements of low power consumption. This arrangement is particularly advantageous in memory circuits.
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