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US5051377A Method for forming a thin dielectric layer on a substrate 失效
在基板上形成薄介电层的方法

Method for forming a thin dielectric layer on a substrate
摘要:
Disclosed is a thin dielectric inorganic layer overlaying a substrate, and having a thickness of .ltoreq. about 20 nm and a defect density of .ltoreq. about 0.6 defects/cm.sup.2 determined by BV measurements.Also disclosed is a method of forming such a layer, according to which a layer having the desired composition and thickness is formed on a substrate, followed by an ion implanatation into the substrate through the layer with a dose of .gtoreq. about 10.sup.15 ions/cm.sup.2 and a subsequence anneal at a temperature of .gtoreq. about 500.degree. C. for a predetermined time.
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