发明授权
- 专利标题： Semiconductor field oxidation process
- 专利标题（中）： 半导体场氧化工艺
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申请号： US615445申请日： 1990-11-19
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公开(公告)号： US5091332A公开(公告)日： 1992-02-25
- 发明人: Mark T. Bohr , Lawrence N. Brigham, Jr. , Shahab Hossaini
- 申请人： Mark T. Bohr , Lawrence N. Brigham, Jr. , Shahab Hossaini
- 申请人地址： CA Santa Clara
- 专利权人： Intel Corporation
- 当前专利权人： Intel Corporation
- 当前专利权人地址： CA Santa Clara
- 主分类号： H01L21/761
- IPC分类号： H01L21/761 ; H01L21/266 ; H01L21/316 ; H01L21/76 ; H01L21/762 ; H01L21/8238 ; H01L27/08 ; H01L27/092
摘要：
Front end processing for a CMOS substrate resulting in the formation of n-wells, p-wells, channel stops and field oxide regions. Both the n-type and p-type dopant are implanted through silicon nitride members with one type dopant being first blocked by a first layer of photoresist and the second dopant by a second layer of photoresist. The field oxide regions are grown after the first dopant is implanted. Relatively low level ion implantation is used and additional threshold adjusting implants are not needed.
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