发明授权
- 专利标题： Process for manufacturing vertical dynamic random access memories
- 专利标题（中）： 制造垂直动态随机存取存储器的过程
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申请号： US564470申请日： 1990-07-30
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公开(公告)号： US5106775A公开(公告)日： 1992-04-21
- 发明人: Toru Kaga , Yoshifumi Kawamoto , Hideo Sunami
- 申请人： Toru Kaga , Yoshifumi Kawamoto , Hideo Sunami
- 申请人地址： JPX Tokyo
- 专利权人： Hitachi, Ltd.
- 当前专利权人： Hitachi, Ltd.
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX62-310821 19871210
- 主分类号： H01L27/04
- IPC分类号： H01L27/04 ; H01L21/28 ; H01L21/311 ; H01L21/334 ; H01L21/762 ; H01L21/822 ; H01L21/8242 ; H01L27/10 ; H01L27/108 ; H01L29/06 ; H01L29/51 ; H01L29/78
摘要：
A semiconductor memory comprises a switching device and a charge-storage device disposed at the upper and lower sides, respectively, of each of semiconductor islands. The islands are formed on a semiconductor substrate that is completely isolated from the semiconductor substrate by an insulator. The switching device and charge-storage device are substantially the same width. The memory cell structure is extremely small. The cell structure is highly resistant to alpha-particles and is formed self-aligned. During manufacture, the SiO.sub.2 island is oxidized adjacent its lower end to insulate the island from the substrate.
公开/授权文献
- US5653191A Pressure indicator 公开/授权日：1997-08-05
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