发明授权
- 专利标题： Method of manufacturing a semiconductor device using an isopropyl alcohol ashing step
- 专利标题（中）： 使用异丙醇灰化步骤制造半导体器件的方法
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申请号： US831846申请日： 1992-02-06
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公开(公告)号： US5227341A公开(公告)日： 1993-07-13
- 发明人: Yukihiro Kamide , Shingo Kadomura , Tetsuya Tatsumi
- 申请人： Yukihiro Kamide , Shingo Kadomura , Tetsuya Tatsumi
- 申请人地址： JPX
- 专利权人： Sony Corporation
- 当前专利权人： Sony Corporation
- 当前专利权人地址： JPX
- 优先权： JPXP020635/91 19910214
- 主分类号： H01L21/302
- IPC分类号： H01L21/302 ; G03F7/42 ; H01L21/02 ; H01L21/3065 ; H01L21/311 ; H01L21/3213
摘要：
An improved method of manufacturing a semiconductor device includes forming an insulating layer on a substrate, depositing a metal film layer on the insulating layer and depositing a photoresist layer on the metal film layer. The photoresist layer is formed with openings through which a predetermined surface of the metal film layer is exposed. The predetermined surface of the metal film layer is subjected to dry etching so that an underlying portion of the insulating layer is exposed. The remaining portion of the photoresist layer is then subjected to ashing by using an isopropyl alcohol-containing gas to expose the surface of said metal film layer.
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