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    Method of manufacturing a semiconductor device using an isopropyl alcohol ashing step
    1.
    发明授权
    Method of manufacturing a semiconductor device using an isopropyl alcohol ashing step 失效
    使用异丙醇灰化步骤制造半导体器件的方法

    公开(公告)号：US5227341A

    公开(公告)日：1993-07-13

    申请号：US831846

    申请日：1992-02-06

    申请人： Yukihiro Kamide ,  Shingo Kadomura ,  Tetsuya Tatsumi

    发明人： Yukihiro Kamide ,  Shingo Kadomura ,  Tetsuya Tatsumi

    IPC分类号： H01L21/302 ,  G03F7/42 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213

    CPC分类号： H01L21/02071 ,  G03F7/42 ,  H01L21/31138

    摘要： An improved method of manufacturing a semiconductor device includes forming an insulating layer on a substrate, depositing a metal film layer on the insulating layer and depositing a photoresist layer on the metal film layer. The photoresist layer is formed with openings through which a predetermined surface of the metal film layer is exposed. The predetermined surface of the metal film layer is subjected to dry etching so that an underlying portion of the insulating layer is exposed. The remaining portion of the photoresist layer is then subjected to ashing by using an isopropyl alcohol-containing gas to expose the surface of said metal film layer.

    摘要翻译： 制造半导体器件的改进方法包括在衬底上形成绝缘层，在绝缘层上沉积金属膜层，并在金属膜层上沉积光致抗蚀剂层。 光致抗蚀剂层形成有露出金属膜层的预定表面的开口。 对金属膜层的预定表面进行干蚀刻，以使绝缘层的下面部分露出。 然后通过使用含异丙醇的气体对光致抗蚀剂层的剩余部分进行灰化，以暴露所述金属膜层的表面。

    Dry etching method
    2.
    发明授权
    Dry etching method 失效
    干蚀刻法

    公开(公告)号：US5221430A

    公开(公告)日：1993-06-22

    申请号：US860074

    申请日：1992-03-30

    申请人： Shingo Kadomura ,  Yukihiro Kamide

    发明人： Shingo Kadomura ,  Yukihiro Kamide

    IPC分类号： H01L21/302 ,  H01L21/3065 ,  H01L21/3213

    CPC分类号： H01L21/32136

    摘要： Proposed is a method for improving resist selectivity in dry etching of an aluminum-based material layer. A mixed gas containing a chlorine-based gas and hydrogen iodide (HI) is used as an etching gas. The chlorine-based gas furnishes Cl* as a main etchant for the Al-based material layer, while HI furnishes H*. For anisotropic etching of the Al-based material layer, decomposition products of a resist mask are used as a sidewall protection film. It has been known that deposition of the sidewall protection film is promoted when hydrogen atoms are contained in the sidewall protection film. HI is used in the present invention as a supply source for H* because the interatomic bond energy of its H--I bond is low as compared to that of H.sub.2, HCl or HBr so that HI is superior to the H* yielding efficiency under discharge dissociation conditions. In this manner, the bias power necessary for anisotropic etching may be reduced to inhibit sputtering out of the resist mask. Among practically useful etching gases are BCl.sub.3 /Cl.sub.2 /HI and Cl.sub.2 /HI.

    摘要翻译： 提出了一种改善铝基材料层的干法蚀刻中的抗蚀剂选择性的方法。 使用含有氯系气体和碘化氢（HI）的混合气体作为蚀刻气体。 氯基气体提供Cl *作为Al基材料层的主要蚀刻剂，而HI提供H *。 对于Al基材料层的各向异性蚀刻，使用抗蚀剂掩模的分解产物作为侧壁保护膜。 已知当侧壁保护膜中含有氢原子时，促进侧壁保护膜的沉积。 本发明中使用HI作为H *的供给源，因为与H2，HCl或HBr相比，其HI键的原子间键能低，使得HI在放电解离条件下优于H *产生效率 。 以这种方式，可以减少各向异性蚀刻所需的偏置功率，以防止从抗蚀剂掩模中溅射。 实际有用的蚀刻气体是BCl3 / Cl2 / HI和Cl2 / HI。

    Dry etching method
    3.
    发明授权
    Dry etching method 失效
    干蚀刻方法

    公开(公告)号：US5180464A

    公开(公告)日：1993-01-19

    申请号：US644014

    申请日：1991-01-22

    申请人： Tetsuya Tatsumi ,  Shingo Kadomura

    发明人： Tetsuya Tatsumi ,  Shingo Kadomura

    IPC分类号： H01L21/3213

    CPC分类号： H01L21/32137

    摘要： Disclosed is a dry etching method by which a polycide film consisting of a refractory metal silicide layer and a polysilicon layer are stacked one upon the other may be etched with high anisotropy, low pollution, high selectivity and high speed without using flon gases.According to the method of the present invention, an etching gas containing a fluorine base gas mixed at least with HBr is used for etching the polycide film for realizing anisotropic processing under sidewall protection by a reaction product of mainly the resist material and Br.Overetching for uniform processing in the wafer plane is performed with the use approximately solely of the fluorine base gas or HBr for realizing a high speed and improving substrate selectivity.The overetching step is preceded by oxygen plasma treatment for oxidizing the reaction product and intensifying side wall protective effects while improving anisotropy.Finally, the changes in the emission spectrum intensity during the etching are monitored for determining the end point of etching of the refractory metal silicide layer to enable more accurate setting of the etching conditions.

    Dry etching method
    4.
    发明授权
    Dry etching method 失效
    干蚀刻法

    公开(公告)号：US5354421A

    公开(公告)日：1994-10-11

    申请号：US824130

    申请日：1992-01-22

    申请人： Tetsuya Tatsumi ,  Shingo Kadomura ,  Tetsuji Nagayama

    发明人： Tetsuya Tatsumi ,  Shingo Kadomura ,  Tetsuji Nagayama

    IPC分类号： C23F4/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/3213 ,  H01L21/00

    CPC分类号： H01L21/32137 ,  H01L21/3065

    摘要： A dry etching method for performing anisotropic etching of a layer of a silicon based material without using a chlorofluorocarbon gas, is proposed. Sulfur halides yielding free sulfur (S) into a plasma under conditions of dissociation by electrical discharge, such as S.sub.2 F.sub.2 or S.sub.2 Cl.sub.2, are used as main components of the etching gas. This S is used for sidewall protection and for improving selectivity during etching, and is removed by sublimation by heating the wafer after etching. Although etching may be achieved by S.sub.2 F.sub.2 alone, suitable measures may preferably be used to increase the S/X ratio of an etching reaction system, which is a ratio of the number of atoms of S to that of X or a halogen, because the layer of the silicon based material is highly susceptible to halogen radicals. Specifically, optimum results may be obtained by (a) adding H.sub.2, H.sub.2 S or SiH.sub.4 to the etching gas, (b) introducing hydrogen in advance into an area for etching by ion implantation, (c) using a silicon-containing resist mask, or (d) by coating the surface of a wafer cover with an amorphous silicon layer.

    摘要翻译： 提出了不使用氯氟烃气体进行硅基材料层的各向异性蚀刻的干式蚀刻方法。 作为蚀刻气体的主要成分，使用通过放电解离的条件（如S2F2或S2Cl2）在游离硫（S）中产生游离硫（S）的硫化物。 该S用于侧壁保护和用于在蚀刻期间提高选择性，并且通过在蚀刻之后加热晶片而通过升华除去。 虽然可以仅通过S2F2实现蚀刻，但是优选地可以采用适当的措施来提高蚀刻反应体系的S / X比，其是S的原子数与X或卤素的原子数之比，因为层 的硅基材料对卤素自由基非常敏感。 具体地，可以通过（a）向蚀刻气体中添加H2，H2S或SiH4，（b）预先将氢引入到通过离子注入蚀刻的区域中，（c）使用含硅抗蚀剂掩模或 （d）通过用非晶硅层涂覆晶片盖的表面。

    Plasma processing apparatus and plasma processing method
    5.
    发明申请
    Plasma processing apparatus and plasma processing method 审中-公开
    等离子体处理装置和等离子体处理方法

    公开(公告)号：US20050263247A1

    公开(公告)日：2005-12-01

    申请号：US11060598

    申请日：2005-02-18

    申请人： Seiji Samukawa ,  Satoshi Nishikawa ,  Shingo Kadomura

    发明人： Seiji Samukawa ,  Satoshi Nishikawa ,  Shingo Kadomura

    IPC分类号： H05H1/00 ,  C23F1/00 ,  G01R31/12 ,  H01J37/32 ,  H01L21/205 ,  H01L21/3065

    CPC分类号： H01J37/32935 ,  G01R31/1263 ,  H01J2237/0206

    摘要： In a plasma processing apparatus which includes a chamber (1) equipped with a wafer stage (3) for mounting thereon a substrate (2) to be processed, and which processes the substrate (2) by exposure to a plasma (4), a photon detection sensor (5) for measuring an ultraviolet-light-induced current is placed on a circumferential portion of a substrate mounting surface (3a) of the wafer stage (3) so that the occurrence of an abnormal discharge can be detected, in real time, from a change in the output of the photon detection sensor (5).

    摘要翻译： 在一种等离子体处理装置中，其包括配备有用于在其上安装待处理的基板（2）并通过暴露于等离子体（4）来处理基板（2）的晶片台（3）的室（1）， 将用于测量紫外光感应电流的光子检测传感器（5）放置在晶片台（3）的基板安装表面（3a）的周向部分上，从而可以检测出异常放电的发生 来自光子检测传感器（5）的输出的变化的实时的。

    Dry etching method
    7.
    发明授权
    Dry etching method 失效
    干蚀刻法

    公开(公告)号：US5994226A

    公开(公告)日：1999-11-30

    申请号：US712572

    申请日：1996-09-13

    申请人： Shingo Kadomura

    发明人： Shingo Kadomura

    IPC分类号： H01L21/302 ,  H01L21/3065 ,  H01L21/3213

    CPC分类号： H01L21/32139

    摘要： A dry etching method for a conductive material layer is disclosed. The dry etching method has the steps of: forming an oxygen-containing antireflection film on a surface of a conductive material layer; forming a patterned mask layer on the antireflection film; forming a sidewall protection film on a sidewall of the mask layer; and etching the conductive material layer using the mask layer having the sidewall protection film formed thereon. The sidewall protection film is formed after the antireflection film is patterned using the mask layer. The antireflection film is patterned after the sidewall protection film is formed, with the sidewall protection film left on the sidewall of the antireflection film. The sidewall protection film is formed by using at least one of sulfur based compound and sulfur nitride based compound. The antireflection film is composed of an SiON based material. The conductive material layer is composed of a material selected from the group consisting of a polycide film, an Al based alloy material layer, a Cu based alloy material layer and a refractory metal layer. The conductive material layer is formed on a semiconductor substrate having an insulating film formed on a surface thereof. The conductive material layer is formed on an insulating film having a barrier metal layer formed on a surface thereof.

    摘要翻译： 公开了一种用于导电材料层的干蚀刻方法。 干蚀刻方法具有以下步骤：在导电材料层的表面上形成含氧抗反射膜; 在抗反射膜上形成图案化掩模层; 在所述掩模层的侧壁上形成侧壁保护膜; 并且使用其上形成有侧壁保护膜的掩模层蚀刻导电材料层。 在使用掩模层对防反射膜进行图案化之后形成侧壁保护膜。 在形成侧壁保护膜之后，防反射膜被图案化，侧壁保护膜留在防反射膜的侧壁上。 通过使用硫系化合物和硫化氮类化合物中的至少一种来形成侧壁保护膜。 防反射膜由SiON基材料构成。 导电材料层由选自由多晶硅膜，Al基合金材料层，Cu基合金材料层和难熔金属层组成的组中的材料构成。 导电材料层形成在其表面上形成有绝缘膜的半导体衬底上。 导电材料层形成在其表面上形成有阻挡金属层的绝缘膜上。

    Plasma CVD process and semiconductor device having metal film formed by the process
    8.
    发明授权
    Plasma CVD process and semiconductor device having metal film formed by the process 失效
    具有通过该方法形成的金属膜的等离子体CVD工艺和半导体器件

    公开(公告)号：US5962084A

    公开(公告)日：1999-10-05

    申请号：US770819

    申请日：1996-12-20

    申请人： Takaaki Miyamoto ,  Shingo Kadomura ,  Atsushi Kawashima

    发明人： Takaaki Miyamoto ,  Shingo Kadomura ,  Atsushi Kawashima

    IPC分类号： C23C16/50 ,  C23C16/08 ,  C23C16/511 ,  H01L21/28 ,  H01L21/285 ,  H01L21/768 ,  H05H1/29

    CPC分类号： H01L21/28556 ,  C23C16/08 ,  H01L21/76877

    摘要： A plasma CVD process of forming a metal film containing a residual halogen element in a small amount and a high reliability semiconductor device fabricated by the process. The plasma CVD process includes the step of forming a metal film on a substrate to be processed, using a mixed gas containing a metal halide and hydrogen, wherein the plasma CVD process adopts a plasma CVD condition which is determined in such a manner that emission spectrum intensities of a plasma of the mixed gas are measured; and a mixing ratio of the metal halide in the mixed gas is set to be not more than a value at which a decreasing rate, depending on mixing of the metal halide, of an emission spectrum intensity of a hydrogen spectral line is rapidly changed and also at which an increasing ratio, depending on mixing of the metal halide, of an emission spectrum intensity of a halogen element is rapidly changed.

    摘要翻译： 形成含有少量残留卤素元素的金属膜和通过该工艺制造的高可靠性半导体器件的等离子体CVD工艺。 等离子体CVD工艺包括使用包含金属卤化物和氢气的混合气体在待加工的基板上形成金属膜的步骤，其中等离子体CVD工艺采用等离子体CVD条件，该等离子体CVD条件以发射光谱 测量混合气体的等离子体的强度; 并且将混合气体中的金属卤化物的混合比设定为不大于根据金属卤化物的混合使得氢谱线的发射光谱强度的降低速率迅速变化的值， 其中取决于金属卤化物的混合，卤素元素的发射光谱强度的增加比率迅速变化。

    Interconnection forming method
    9.
    发明授权
    Interconnection forming method 失效
    互连形成方法

    公开(公告)号：US5599742A

    公开(公告)日：1997-02-04

    申请号：US933027

    申请日：1992-08-20

    申请人： Shingo Kadomura

    发明人： Shingo Kadomura

    IPC分类号： H01L21/302 ,  H01L21/3065 ,  H01L21/318 ,  H01L21/3205 ,  H01L21/321 ,  H01L21/768 ,  H01L23/52 ,  H01L21/467

    CPC分类号： H01L21/76885 ,  H01L21/321 ,  Y10S438/902 ,  Y10S438/958

    摘要： A method of forming interconnectors involves the passivation (surface protective) of aluminum interconnector patterns and connection hole surfaces without objectionable particle level problems. Under electrical discharge disassociation conditions, sulphur (S) is liberated and permits the formation of an anti-corrosive polythiazyl in a plasma generated by using gaseous sulphur and nitrogen containing compounds. For example, in order to prevent the exposure of an aluminum interconnector material layer to atmospheric air after it has been resist masked and etched, plasma CVD is used with a gas containing a mixture of S.sub.2 F.sub.2 /H.sub.2 /N.sub.2, to form a protective film on the surfaces of the pattern. In this coated condition, after corrosion is prevented until such time as the next fabrication step which forms an interlayer insulation membrane is carried out. The protective film can be removed by heating the wafer to about 150.degree. C. at which time the protective film readily sublimes or decomposes. Other application come in that, after a natural oxide film is removed from a contact hole surface, until an upper interconnector is formed, the above mentioned protective film is temporarily formed over the exposed surfaces to prevent the reformation of the natural oxide film.

    摘要翻译： 形成互连器的方法涉及铝互连器图案和连接孔表面的钝化（表面保护），而没有不利的粒子水平问题。 在放电分解条件下，释放硫（S），并允许在通过使用气态含硫和含氮化合物产生的等离子体中形成抗腐蚀性的聚噻唑。 例如，为了防止铝绝缘体材料层在其被抗蚀剂掩模蚀刻之后暴露于大气中，等离子体CVD与含有S2F2 / H2 / N2混合物的气体一起使用以形成保护膜 图案的表面。 在这种涂覆状态下，防止腐蚀，直到进行形成层间绝缘膜的下一个制造步骤为止。 可以通过将晶片加热至约150℃来除去保护膜，此时保护膜容易升华或分解。 另外的应用是，在从接触孔表面除去自然氧化物膜之后，直到形成上部互连器，上述保护膜暂时形成在露出的表面上，以防止天然氧化物膜的重整。

    Dry etching method
    10.
    发明授权
    Dry etching method 失效
    干蚀刻法

    公开(公告)号：US5312518A

    公开(公告)日：1994-05-17

    申请号：US891448

    申请日：1992-05-29

    申请人： Shingo Kadomura

    发明人： Shingo Kadomura

    IPC分类号： H01L21/302 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/768 ,  H01L21/00

    CPC分类号： H01L21/76802 ,  H01L21/31116 ,  H01L21/31144

    摘要： A dry etching method whereby an SiO.sub.2 layer and an Si.sub.3 N.sub.4 layer may be etched with high selectivity for each other. As etching gas, such sulfur fluorides as S.sub.2 F.sub.2 are used which, when dissociated by electric discharges, will form SF.sub.x.sup.+ as a main etchant for the SiO.sub.2 layer or F* as a main etchant for the Si.sub.3 N.sub.4 layer and release sulfur in the plasma. When the SiO.sub.2 layer is etched on the Si.sub.3 N.sub.4 layer as an underlying layer via a resist mask, nitrogen atoms, removed from the underlying layer upon exposure thereof to the plasma, will combine with sulfur in the plasma to form on the exposed surface thereof such sulfur nitride compounds as polythiazyl (SN).sub.x, which will, in turn, serve to achieve high selectivity for the underlying layer. The SiO.sub.2 layer can also be etched via an Si.sub.3 N.sub.4 mask patterned into a predetermined shape, in which case sulfur nitride compounds formed on the Si.sub.3 N.sub.4 mask will serve to achieve high selectivity therefor.

    摘要翻译： 可以以高选择性彼此蚀刻SiO 2层和Si 3 N 4层的干蚀刻方法。 作为蚀刻气体，使用如S2F2这样的硫化氟，当通过放电解离时，其将形成SF x +作为SiO 2层或F *的主要蚀刻剂，作为Si 3 N 4层的主要蚀刻剂并释放等离子体中的硫。 当通过抗蚀剂掩模在Si 3 N 4层上作为下层蚀刻SiO 2层时，在暴露于等离子体时从底层去除的氮原子将与等离子体中的硫结合，以在暴露的表面上形成这样的硫 氮化物作为聚噻吩（SN）x，其又将用于实现对下层的高选择性。 也可以通过图案化为预定形状的Si 3 N 4掩模蚀刻SiO 2层，在这种情况下，形成在Si 3 N 4掩模上的硫化氮化合物将用于实现高选择性。