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    Method of manufacturing a semiconductor device using an isopropyl alcohol ashing step
    1.
    发明授权
    Method of manufacturing a semiconductor device using an isopropyl alcohol ashing step 失效
    使用异丙醇灰化步骤制造半导体器件的方法

    公开(公告)号：US5227341A

    公开(公告)日：1993-07-13

    申请号：US831846

    申请日：1992-02-06

    申请人： Yukihiro Kamide ,  Shingo Kadomura ,  Tetsuya Tatsumi

    发明人： Yukihiro Kamide ,  Shingo Kadomura ,  Tetsuya Tatsumi

    IPC分类号： H01L21/302 ,  G03F7/42 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213

    CPC分类号： H01L21/02071 ,  G03F7/42 ,  H01L21/31138

    摘要： An improved method of manufacturing a semiconductor device includes forming an insulating layer on a substrate, depositing a metal film layer on the insulating layer and depositing a photoresist layer on the metal film layer. The photoresist layer is formed with openings through which a predetermined surface of the metal film layer is exposed. The predetermined surface of the metal film layer is subjected to dry etching so that an underlying portion of the insulating layer is exposed. The remaining portion of the photoresist layer is then subjected to ashing by using an isopropyl alcohol-containing gas to expose the surface of said metal film layer.

    摘要翻译： 制造半导体器件的改进方法包括在衬底上形成绝缘层，在绝缘层上沉积金属膜层，并在金属膜层上沉积光致抗蚀剂层。 光致抗蚀剂层形成有露出金属膜层的预定表面的开口。 对金属膜层的预定表面进行干蚀刻，以使绝缘层的下面部分露出。 然后通过使用含异丙醇的气体对光致抗蚀剂层的剩余部分进行灰化，以暴露所述金属膜层的表面。

    Dry etching method
    2.
    发明授权
    Dry etching method 失效
    干蚀刻方法

    公开(公告)号：US5180464A

    公开(公告)日：1993-01-19

    申请号：US644014

    申请日：1991-01-22

    申请人： Tetsuya Tatsumi ,  Shingo Kadomura

    发明人： Tetsuya Tatsumi ,  Shingo Kadomura

    IPC分类号： H01L21/3213

    CPC分类号： H01L21/32137

    摘要： Disclosed is a dry etching method by which a polycide film consisting of a refractory metal silicide layer and a polysilicon layer are stacked one upon the other may be etched with high anisotropy, low pollution, high selectivity and high speed without using flon gases.According to the method of the present invention, an etching gas containing a fluorine base gas mixed at least with HBr is used for etching the polycide film for realizing anisotropic processing under sidewall protection by a reaction product of mainly the resist material and Br.Overetching for uniform processing in the wafer plane is performed with the use approximately solely of the fluorine base gas or HBr for realizing a high speed and improving substrate selectivity.The overetching step is preceded by oxygen plasma treatment for oxidizing the reaction product and intensifying side wall protective effects while improving anisotropy.Finally, the changes in the emission spectrum intensity during the etching are monitored for determining the end point of etching of the refractory metal silicide layer to enable more accurate setting of the etching conditions.

    Dry etching method
    3.
    发明授权
    Dry etching method 失效
    干蚀刻法

    公开(公告)号：US5354421A

    公开(公告)日：1994-10-11

    申请号：US824130

    申请日：1992-01-22

    申请人： Tetsuya Tatsumi ,  Shingo Kadomura ,  Tetsuji Nagayama

    发明人： Tetsuya Tatsumi ,  Shingo Kadomura ,  Tetsuji Nagayama

    IPC分类号： C23F4/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/3213 ,  H01L21/00

    CPC分类号： H01L21/32137 ,  H01L21/3065

    摘要： A dry etching method for performing anisotropic etching of a layer of a silicon based material without using a chlorofluorocarbon gas, is proposed. Sulfur halides yielding free sulfur (S) into a plasma under conditions of dissociation by electrical discharge, such as S.sub.2 F.sub.2 or S.sub.2 Cl.sub.2, are used as main components of the etching gas. This S is used for sidewall protection and for improving selectivity during etching, and is removed by sublimation by heating the wafer after etching. Although etching may be achieved by S.sub.2 F.sub.2 alone, suitable measures may preferably be used to increase the S/X ratio of an etching reaction system, which is a ratio of the number of atoms of S to that of X or a halogen, because the layer of the silicon based material is highly susceptible to halogen radicals. Specifically, optimum results may be obtained by (a) adding H.sub.2, H.sub.2 S or SiH.sub.4 to the etching gas, (b) introducing hydrogen in advance into an area for etching by ion implantation, (c) using a silicon-containing resist mask, or (d) by coating the surface of a wafer cover with an amorphous silicon layer.

    摘要翻译： 提出了不使用氯氟烃气体进行硅基材料层的各向异性蚀刻的干式蚀刻方法。 作为蚀刻气体的主要成分，使用通过放电解离的条件（如S2F2或S2Cl2）在游离硫（S）中产生游离硫（S）的硫化物。 该S用于侧壁保护和用于在蚀刻期间提高选择性，并且通过在蚀刻之后加热晶片而通过升华除去。 虽然可以仅通过S2F2实现蚀刻，但是优选地可以采用适当的措施来提高蚀刻反应体系的S / X比，其是S的原子数与X或卤素的原子数之比，因为层 的硅基材料对卤素自由基非常敏感。 具体地，可以通过（a）向蚀刻气体中添加H2，H2S或SiH4，（b）预先将氢引入到通过离子注入蚀刻的区域中，（c）使用含硅抗蚀剂掩模或 （d）通过用非晶硅层涂覆晶片盖的表面。

    Simulator, processing system, damage evaluation method and damage evaluation program
    4.
    发明授权
    Simulator, processing system, damage evaluation method and damage evaluation program 有权
    模拟器，处理系统，损伤评估方法和损伤评估程序

    公开(公告)号：US09411914B2

    公开(公告)日：2016-08-09

    申请号：US13323373

    申请日：2011-12-12

    申请人： Nobuyuki Kuboi ,  Tetsuya Tatsumi

    发明人： Nobuyuki Kuboi ,  Tetsuya Tatsumi

    IPC分类号： G06F7/60 ,  G06F17/10 ,  G06F17/50

    CPC分类号： G06F17/5009 ,  G06F2217/16

    摘要： Disclosed herein is a simulator including: an input section adapted to acquire processing conditions for a given process performed on a workpiece; and a damage calculation section adapted to acquire the damage of the workpiece, based on the processing conditions, by calculating, using a Flux method, the relationship between the amount of a first substance externally injected onto a given evaluation point on the workpiece during the given process and the amount of a second substance released from the given evaluation point on the workpiece as a result of the injection of the first substance.

    摘要翻译： 这里公开了一种模拟器，其包括：适于获取对工件执行的给定处理的处理条件的输入部分; 以及破坏计算部，根据加工条件，通过使用通量法计算在给定的工件上向外注入到工件上的给定评价点上的第一物质的量之间的关系，适于获取工件的损伤 过程和由于注入第一物质而从工件上的给定评估点释放的第二物质的量。

    Method of producing semiconductor device
    6.
    发明授权
    Method of producing semiconductor device 失效
    半导体器件的制造方法

    公开(公告)号：US5378311A

    公开(公告)日：1995-01-03

    申请号：US156902

    申请日：1993-11-24

    申请人： Tetsuji Nagayama ,  Tetsuya Tatsumi

    发明人： Tetsuji Nagayama ,  Tetsuya Tatsumi

    IPC分类号： H01L21/302 ,  H01J37/32 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/677 ,  H01L21/683 ,  H05H1/46 ,  H01L21/306 ,  B44C1/22

    CPC分类号： H01L21/02071 ,  H01J37/32834 ,  H01J37/32862 ,  H01L21/31138

    摘要： A method in which in case different kinds of processing are consecutively conducted in a single chamber of a plasma device, a residual portion of a processing gas used in one process is prevented from affecting a next process, is disclosed. A chemical species resulting from the processing gas in one process is prevented from being generated in forming a plasma in the next processing, by introducing an inactive gas after the processing gas used in one processing is exhausted once, or by introducing the inactive gas while exhausting the processing gas, or by cyclically repeating exhaust of the processing gas and introduction of the inactive gas, prior to the next process. The degree of exhaust may be monitored on the basis of an emission spectrum of the plasma. If the exhaust is carried out between a dry etching process conducted while holding a substrate on a single electrode electrostatic chuck and a process of removing residual charge of the chuck in a state of non-bias application to the substrate, or between a just etching process and an over etching process, deterioration of an etching shape due to radicals in the plasma may be prevented.

    摘要翻译： 公开了一种方法，其中在等离子体装置的单个室中连续执行不同种类的处理的情况下，防止在一个处理中使用的处理气体的残留部分影响下一个处理。 在一次处理中由处理气体产生的化学物质在下一个处理中通过在一个处理中使用的处理气体耗尽一次之后引入惰性气体，或通过在排出时引入惰性气体来防止在形成等离子体时产生 处理气体，或者在下一个处理之前循环重复处理气体的排气和惰性气体的引入。 可以基于等离子体的发射光谱监测排气度。 如果在将基板保持在单电极静电卡盘上进行的干蚀刻工艺和在基板的非偏压施加状态下去除卡盘的剩余电荷的过程之间进行排气，或者在刚刚蚀刻工艺 和过蚀刻工艺，可以防止由于等离子体中的自由基导致的蚀刻形状的劣化。

    Dry etching method by sulfur conditioning
    7.
    发明授权
    Dry etching method by sulfur conditioning 失效
    干蚀刻法通过硫磺调理

    公开(公告)号：US5211790A

    公开(公告)日：1993-05-18

    申请号：US841946

    申请日：1992-02-26

    申请人： Tetsuya Tatsumi

    发明人： Tetsuya Tatsumi

    IPC分类号： H01L21/302 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/3213 ,  H05H1/46

    CPC分类号： H01L21/32137 ,  H01L21/3065 ,  H01L21/3086 ,  H01L21/32139 ,  Y10S438/909

    摘要： A method for anisotropic etching of a layer of a silicon-based material, using an SF.sub.6 gas, a versatile etching gas, is proposed. Sulfur (S) is used as a sidewall protection substance. This sulfur is not supplied into an etching reaction system on discharge dissociation of the etching gas, but is supplied by being sublimed off on heating from the inner wall surface of the etching chamber on which it is previously grown from a gaseous phase. Specifically, the S.sub.2 F.sub.2 gas is introduced while a predetermined region of the inner wall surface of the etching chamber is cooled, and preliminary discharge is carried out to deposit sulfur on the region. A SF.sub.6 containing etching gas is introduced into the chamber and the above mentioned region is heated for subliming S and simultaneously etching the layer of the silicon-based material. With this method, there is no necessity of using a specific etching gas capable of yielding free S in the plasma under discharge dissociating conditions. The present invention has an important significance as post-CFC (chlorofluorocarbon) gas measures. After end of etching, sulfur may be easily sublimed off by heating the wafer without the risk of pollution by particles.

    摘要翻译： 提出了使用SF6气体，多功能蚀刻气体对硅系材料层进行各向异性蚀刻的方法。 硫（S）用作侧壁保护物质。 在蚀刻气体的放电解离时，这种硫没有被供给到蚀刻反应系统中，而是通过从其预先从气相生长的蚀刻室的内壁表面加热而提供。 具体地说，在蚀刻室的内壁面的规定区域被冷却的同时导入S2F2气体，进行初步排出以在该区域上沉积硫。 将含有SF6的蚀刻气体引入到室中，并且将上述区域加热以升华S并同时蚀刻硅基材料层。 通过该方法，不需要在放电解离条件下使用能够在等离子体中产生游离S的特定蚀刻气体。 本发明作为后氟氯化碳（氟氯化碳）气体措施具有重要意义。 在蚀刻结束后，通过加热晶片可以容易地升高硫，而不会有颗粒污染的风险。

    Solid-state imaging device, fabrication method thereof, imaging apparatus, and fabrication method of anti-reflection structure
    8.
    发明授权
    Solid-state imaging device, fabrication method thereof, imaging apparatus, and fabrication method of anti-reflection structure 失效
    固态成像装置及其制造方法，成像装置及防反射结构的制造方法

    公开(公告)号：US08685856B2

    公开(公告)日：2014-04-01

    申请号：US12728448

    申请日：2010-03-22

    申请人： Kensaku Maeda ,  Kaoru Koike ,  Tohru Sasaki ,  Tetsuya Tatsumi

    发明人： Kensaku Maeda ,  Kaoru Koike ,  Tohru Sasaki ,  Tetsuya Tatsumi

    IPC分类号： H01L31/0236

    CPC分类号： G02B1/118 ,  G02F1/133528 ,  H01L21/0335 ,  H01L21/31144 ,  H01L27/1462 ,  H01L27/14685 ,  H01L31/02363 ,  Y02E10/50

    摘要： A fabrication method of an anti-reflection structure includes the steps of: forming a resin film having micro-particles dispersed therein on a surface of a substrate; forming a protrusion dummy pattern on the resin film by etching the resin film using the micro-particles in the resin film as a mask while gradually etching the micro-particles; and forming a protrusion pattern on the surface of the substrate by etching back the surface of the substrate together with the resin film having the protrusion dummy pattern formed thereon, and transferring a surface shape of the protrusion dummy pattern formed on a surface of the resin film to the surface of the substrate.

    摘要翻译： 防反射结构的制造方法包括以下步骤：在基板的表面上形成分散有微粒的树脂膜; 通过在树脂膜中的微粒子作为掩模蚀刻树脂膜，同时逐渐蚀刻微粒，从而在树脂膜上形成突起虚拟图案; 以及通过在其上形成有突起虚拟图案的树脂膜与衬底的表面一起蚀刻而在衬底的表面上形成突起图案，并且转印形成在树脂膜的表面上的突起假图形的表面形状 到基底的表面。