发明授权
- 专利标题: Method for manufacturing an oxide superconductor thin film
- 专利标题(中): 氧化物超导体薄膜的制造方法
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申请号: US140398申请日: 1993-10-25
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公开(公告)号: US5374613A公开(公告)日: 1994-12-20
- 发明人: Etsuo Noda , Setsuo Suzuki , Osami Morimiya , Kazuo Hayashi
- 申请人: Etsuo Noda , Setsuo Suzuki , Osami Morimiya , Kazuo Hayashi
- 申请人地址: JPX Kawasaki
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JPX Kawasaki
- 优先权: JPX63-60308 19880316; WOXPCT/JP89/00277 19890315
- 主分类号: C23C14/00
- IPC分类号: C23C14/00 ; C23C14/08 ; C23C16/40 ; H01L39/24 ; B05D3/06 ; B05D5/12
摘要:
A method for manufacturing an oxide superconductor thin film is disclosed, which comprises the steps of: (1) preparing a substrate; depositing an oxide superconductor thin film on said substrate by directing a beam containing constituent elements of an oxide superconductor to said substrate; and supplying excited oxygen to or near a thin film deposition site on said substrate during the deposition of said thin film, wherein said beam is selected from the group consisting of an ion beam, neutral particle beam, molecular beam, cluster beam and cluster ion beam, and wherein said excited oxygen is produced by means of generating discharge in an oxygen gas or oxygen-containing gas or by irradiating an oxygen gas or oxygen-containing gas with a beam.
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