In a semiconductor inner lead bonding process, a connection component having leads is disposed on the chip surface so that the leads lie above the contacts. A bond region of each lead is forced downwardly by a tool into engagement with a contact on the chip while a first or proximal end of the lead remains attached to a dielectric support structure. The lead is deformed into an S-shaped configuration by moving the bonding tool horizontally towards the proximal or first end of the lead, thereby forcing the bonding region towards the first end and bending or buckling the lead. Alternatively, the lead is bent downwardly by a tool and the tool may then be disengaged from the lead, shifted away from the proximal end of the lead and again advanced downwardly to secure the lead to the chip contact.