Invention Grant
- Patent Title: Method of manufacturing semiconductor device
- Patent Title (中): 制造半导体器件的方法
-
Application No.: US358624Application Date: 1994-12-14
-
Publication No.: US5492854APublication Date: 1996-02-20
- Inventor: Koichi Ando
- Applicant: Koichi Ando
- Applicant Address: JPX Tokyo
- Assignee: NEC Corporation
- Current Assignee: NEC Corporation
- Current Assignee Address: JPX Tokyo
- Priority: JPX5-318621 19931217
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/02 ; H01L21/3065 ; H01L21/316 ; H01L21/318 ; H01L21/822 ; H01L21/8242 ; H01L27/04 ; H01L27/10 ; H01L27/108 ; H01L21/70
Abstract:
A method of manufacturing a semiconductor device includes the step of forming a capacitor. The step includes the step of forming a lower electrode constituted by a polysilicon film which selectively covers a surface of a predetermined insulating film on a semiconductor substrate, and the step of performing heating in an atmosphere containing an SiH.sub.4 gas and removal of a native oxide film on a surface of the lower electrode, and then performing formation of a silicon nitride film without being exposed to an oxygen atmosphere.
Public/Granted literature
- US4988957A Electronically-tuned thin-film resonator/filter controlled oscillator Public/Granted day:1991-01-29
Information query
IPC分类:
