公开(公告)号：US07538914B2

公开(公告)日：2009-05-26

申请号：US10962494

申请日：2004-10-13

Applicant: Koichi Ando

Inventor： Koichi Ando

IPC: H04N1/04

CPC classification number: H04N1/1017 ,  F16F15/04 ,  H04N1/192 ,  H04N2201/0422 ,  H04N2201/0428

Abstract: An image reading apparatus includes a scanner which has a document table for loading a document on the upper part of a main body, detects optical image information reflected from the document, and reads the document image, a support member for surrounding the main body, a plurality of cushioning members installed between the main body and the support member at the position for supporting the load of the main body for preventing transfer of vibration from the support member to the main body, and at least one adjustable bracket which is mounted on the main body, can adjust the support height of the main body to the support member, and supports the cushioning members.

Abstract translation: 图像读取装置包括扫描器，该扫描器具有用于将文档装载在主体的上部的文件表，检测从文件反射的光学图像信息，并读取文件图像，用于围绕主体的支撑构件， 多个缓冲构件安装在主体和支撑构件之间，用于支撑主体的负载以防止振动从支撑构件传递到主体的位置;以及至少一个可调节支架，其安装在主体上 可以将主体的支撑高度调节到支撑构件，并且支撑缓冲构件。

公开(公告)号：US20050094218A1

公开(公告)日：2005-05-05

申请号：US10962494

申请日：2004-10-13

Applicant: Koichi Ando

Inventor： Koichi Ando

IPC: G03B27/62 ,  F16F15/04 ,  F16M13/00 ,  G03G15/00 ,  H04N1/00 ,  H04N1/04 ,  H04N1/10 ,  H04N1/107 ,  H04N1/192

CPC classification number: H04N1/1017 ,  F16F15/04 ,  H04N1/192 ,  H04N2201/0422 ,  H04N2201/0428

Abstract: An image reading apparatus includes a scanner which has a document table for loading a document on the upper part of a main body, detects optical image information reflected from the document, and reads the document image, a support member for surrounding the main body, a plurality of cushioning members installed between the main body and the support member at the position for supporting the load of the main body for preventing transfer of vibration from the support member to the main body, and at least one adjustable bracket which is mounted on the main body, can adjust the support height of the main body to the support member, and supports the cushioning members.

Abstract translation: 图像读取装置包括扫描器，该扫描器具有用于将文档装载在主体的上部的文件表，检测从文件反射的光学图像信息，并读取文件图像，用于围绕主体的支撑构件， 多个缓冲构件安装在主体和支撑构件之间，用于支撑主体的负载以防止振动从支撑构件传递到主体的位置;以及至少一个可调节支架，其安装在主体上 可以将主体的支撑高度调节到支撑构件，并且支撑缓冲构件。

公开(公告)号：US06475862B1

公开(公告)日：2002-11-05

申请号：US09636078

申请日：2000-08-10

Applicant: Koichi Ando

Inventor： Koichi Ando

IPC: H01L21336

CPC classification number: H01L21/28202 ,  H01L21/3144 ,  H01L21/31662 ,  H01L21/823857 ,  H01L29/518

Abstract: Field effect transistors of an integrated circuit are fabricated on a silicon substrate, and require gate insulating layers appropriate for the purpose of individual component circuits, the active areas assigned the field effect transistors are sequentially exposed to source gas varied in the ratio between oxygen and nitrogen for growing silicon oxide and/or silicon oxynitride thereon, and the nitrogen serves as a diffusion inhibitor against the oxygen so as to form the gate insulating layers different in thickness of the order of several angstroms.

Abstract translation: 集成电路的场效应晶体管制造在硅衬底上，并且需要适合于单个元件电路目的的栅极绝缘层，分配有场效应晶体管的有源区域依次暴露于以氧和氮之间的比率变化的源气体 用于在其上生长氧化硅和/或氮氧化硅，并且氮充当用于氧的扩散抑制剂，以形成厚度不等于几埃的栅极绝缘层。

公开(公告)号：US06794258B2

公开(公告)日：2004-09-21

申请号：US10606294

申请日：2003-06-26

Applicant: Mariko Makabe ,  Shin Koyama ,  Koichi Ando

Inventor： Mariko Makabe ,  Shin Koyama ,  Koichi Ando

IPC: H01L21336

CPC classification number: H01L21/28202 ,  H01L29/512 ,  H01L29/518 ,  H01L29/6659 ,  H01L29/7833

Abstract: A metal oxide Semiconductor (MOS) transistor includes a gate insulating film disposed on a surface of a silicon substrate. The gate insulating film has a central portion formed on the silicon substrate and comprising a nitride insulating film, and an end portion located on each side of the central portion, the end portion being thicker than the central portion and formed of an oxide insulating film. The MOS transistor also includes a p-type gate electrode formed on the gate insulating film, sidewalls formed on both sides of the gate insulating film and the gate electrode, a pair of p-type source/drain areas formed in surface portions of the silicon substrate, and a channel area located between the pair of source/drain areas.

Abstract translation: 金属氧化物半导体（MOS）晶体管包括设置在硅衬底的表面上的栅极绝缘膜。 栅极绝缘膜具有形成在硅衬底上并包括氮化物绝缘膜的中心部分和位于中心部分的每一侧上的端部，其端部比中心部分厚，并由氧化物绝缘膜形成。 MOS晶体管还包括形成在栅极绝缘膜上的p型栅极电极，形成在栅极绝缘膜和栅电极两侧的侧壁，形成在硅的表面部分中的一对p型源极/漏极区域 衬底和位于一对源/漏区之间的沟道区。

公开(公告)号：US06258731B1

公开(公告)日：2001-07-10

申请号：US09294101

申请日：1999-04-19

Applicant: Koichi Ando

Inventor： Koichi Ando

IPC: H01L2131

CPC classification number: H01L21/28211 ,  C23C8/10 ,  H01L21/31662

Abstract: A method for fabricating a very thin oxide film, such as a gate oxide film of a MOS transistor, by oxidizing a substrate, which method can accurately and easily control the thickness of the oxide film to a desired value. The method comprises controlling thickness of the oxide film to be formed, by adjusting partial pressure of oxygen in an ambient including oxygen, without changing temperature of oxidation of said substrate and time of oxidation of said substrate. Alternatively, the method comprises controlling thickness of the oxide film to be formed, by adjusting only pressure of an oxidizing ambient, without changing temperature of oxidation of said substrate and time of oxidation of said substrate.

Abstract translation: 通过氧化衬底来制造非常薄的氧化膜的方法，例如MOS晶体管的栅极氧化膜，该方法可以将氧化膜的厚度精确地和容易地控制到期望的值。 该方法包括通过调节包含氧气的环境中的氧的分压来控制所形成的氧化膜的厚度，而不改变所述衬底的氧化温度和所述衬底的氧化时间。 或者，该方法包括通过仅调节氧化环境的压力来控制所形成的氧化膜的厚度，而不改变所述衬底的氧化温度和所述衬底的氧化时间。

公开(公告)号：US5438541A

公开(公告)日：1995-08-01

申请号：US301589

申请日：1994-09-07

Applicant: Koichi Ando

Inventor： Koichi Ando

IPC: H01L27/04 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/10 ,  H01L27/108 ,  G11C13/00

CPC classification number: H01L27/10805

Abstract: A storage capacitor incorporate in a semiconductor dynamic random access memory cell has an accumulating electrode of p-type polysilicon electricaly conencted to an n-type drain region of an associated switching transistor, a dielectric film structure covering the accumulating electrode and a counter electrode opposed through the dielectric film structure and formed of a p-type polysilicon, and the dielectric film structure is thinner than a critical thickness for a direct tunneling current by virtue of the wide potential barrier between the dielectric film structure and the p-type polysilicon and the Fermi level of the p-type polysilicon falling into the forbidden band of the other p-type polyslicon.

Abstract translation: 包含在半导体动态随机存取存储单元中的存储电容器具有与相关的开关晶体管的n型漏极区域相连的p型多晶硅的积聚电极，覆盖积聚电极的电介质膜结构和相对的 电介质膜结构并由p型多晶硅形成，并且由于介电膜结构和p型多晶硅和费米之间的宽势垒，电介质膜结构比用于直接隧道电流的临界厚度薄 p型多晶硅的等级下降到另一个p型多晶硅的禁带中。

公开(公告)号：US5182472A

公开(公告)日：1993-01-26

申请号：US651802

申请日：1991-02-07

Applicant: Koichi Ando

Inventor： Koichi Ando

IPC: H03K19/0944

CPC classification number: H03K19/09448

Abstract: A logic circuit has a logic circuit portion which includes a first MOS transistor circuit, a second MOS transistor circuit and a third MOS transistor circuit for conducting a logical operation. The logic circuit also has a first and a second bipolar transistor for driving a next stage logic circuit and an N-channel MOS transistor for discharging the charge in the base of the second bipolar transistor. There is provided an inverter circuit whose input terminal is connected either to the output terminal or the base of the first bipolar transistor. An input to the gate of the N-channel MOS transistor is supplied from the output terminal of the inverter circuit so that, when the output changes from its high level to its low level, there is no possiblity for the first and second bipolar transistors to turn to their ON-state at the same time. Consequently, all of the current which is to be supplied from the third MOS transistor circuit to the base of the second bipolar transistor flows thereto without by-passing and, as a result, there is no reduction in the collector current of the second bipolar transistor. Thus, it is possible to have the load capacitance at the next stage discharged at a high speed and hence to have the circuit operate at a high speed.

Abstract translation: 逻辑电路具有包括第一MOS晶体管电路，第二MOS晶体管电路和用于进行逻辑运算的第三MOS晶体管电路的逻辑电路部分。 逻辑电路还具有用于驱动下一级逻辑电路的第一和第二双极晶体管和用于对第二双极晶体管的基极中的电荷进行放电的N沟道MOS晶体管。 提供了一个反相器电路，其输入端连接到第一双极晶体管的输出端或基极。 从逆变器电路的输出端子向N沟道MOS晶体管的栅极提供输入，使得当输出从高电平变为低电平时，不可能将第一和第二双极晶体管 同时转为ON状态。 因此，从第三MOS晶体管电路向第二双极型晶体管的基极供给的电流全部流过，而不会产生旁路，结果，第二双极型晶体管的集电极电流不降低 。 因此，可以使下一级的负载电容高速放电，从而使电路高速工作。

公开(公告)号：US4267155A

公开(公告)日：1981-05-12

申请号：US67772

申请日：1979-08-20

Applicant: Yoshio Kobayashi ,  Koichi Ando ,  Susumu Hyodo

Inventor： Yoshio Kobayashi ,  Koichi Ando ,  Susumu Hyodo

IPC: B01D53/60 ,  B01D53/34

CPC classification number: B01D53/60

Abstract: A flue gas containing SO.sub.x, NO.sub.x and O.sub.2 is washed with an alkaline aqueous solution containing a NO.sub.x removal catalyst to form the salts of a dithionate, a sulfate and an imidobissulfate. The salts are crystallized, separated and heated for pyrolysis by a pneumatic conveying pyrolysis unit whereby a gas containing higher concentration of SO.sub.2 is obtained. The gas is fed into the alkaline aqueous solution together with the flue gas so as to improve the efficiency.

Abstract translation: 含有SO x，NO x和O 2的烟道气用含有除去NOx的催化剂的碱性水溶液洗涤以形成连二硫酸盐，硫酸盐和亚氨基二硫酸盐的盐。 盐通过气动输送热解单元结晶，分离和加热以进行热解，从而获得含有较高浓度的SO 2的气体。 气体与烟道气一起进料到碱性水溶液中以提高效率。

公开(公告)号：US07345795B2

公开(公告)日：2008-03-18

申请号：US10617022

申请日：2003-07-11

Applicant: Koichi Ando

Inventor： Koichi Ando

IPC: H04N1/04 ,  H04N1/46

CPC classification number: H04N1/00005 ,  H04N1/00037 ,  H04N1/0005 ,  H04N1/00795 ,  H04N1/00822 ,  H04N1/486 ,  H04N2201/0416 ,  H04N2201/33378

Abstract: A system and method for scanning a document having a plurality of pages includes scanning a first page in the document at a first scanning speed, the first scanning speed being one of a color speed and a monochromatic speed, and determining if the first page is color or monochrome based on a result of the scan of the first page. If the first speed is the monochromatic speed and the first page is determined to be color, or if the first speed is the color speed and the first page is determined to be monochrome, then the first page is rescanned at a second scanning speed, the second scanning speed being the other of a color speed and a monochromatic speed.

Abstract translation: 用于扫描具有多页的文档的系统和方法包括以第一扫描速度扫描文档中的第一页，第一扫描速度是色速和单色速度之一，以及确定第一页是否是彩色 或基于第一页扫描的结果的单色。 如果第一速度是单色速度并且第一页面被确定为颜色，或者如果第一速度是颜色速度并且第一页面被确定为单色，则第一页面以第二扫描速度被重新扫描， 第二扫描速度是色速和单色速度中的另一个。

公开(公告)号：US5492854A

公开(公告)日：1996-02-20

申请号：US358624

申请日：1994-12-14

Applicant: Koichi Ando

Inventor： Koichi Ando

IPC: H01L21/302 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/316 ,  H01L21/318 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/04 ,  H01L27/10 ,  H01L27/108 ,  H01L21/70

CPC classification number: H01L27/1085 ,  H01L28/40 ,  H01L21/3185 ,  H01L28/60 ,  Y10S148/014 ,  Y10S148/017 ,  Y10S148/112 ,  Y10S438/913 ,  Y10S438/974

Abstract: A method of manufacturing a semiconductor device includes the step of forming a capacitor. The step includes the step of forming a lower electrode constituted by a polysilicon film which selectively covers a surface of a predetermined insulating film on a semiconductor substrate, and the step of performing heating in an atmosphere containing an SiH.sub.4 gas and removal of a native oxide film on a surface of the lower electrode, and then performing formation of a silicon nitride film without being exposed to an oxygen atmosphere.

Abstract translation: 制造半导体器件的方法包括形成电容器的步骤。 该步骤包括形成由选择性地覆盖半导体衬底上的预定绝缘膜的表面的多晶硅膜构成的下电极的步骤，以及在含有SiH 4气体的气氛中进行加热并除去天然氧化物膜的步骤 在下电极的表面上，然后在不暴露于氧气氛下进行氮化硅膜的形成。