发明授权
- 专利标题： Method of producing an oxide superconductor single crystal film
- 专利标题（中）： 氧化物超导体单晶膜的制造方法
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申请号： US304770申请日： 1994-09-12
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公开(公告)号： US5512541A公开(公告)日： 1996-04-30
- 发明人: Masaya Konishi , Kunihiko Hayashi , Youichi Enomoto , Shoji Tanaka , Yasuji Yamada , Kanshi Ohtsu , Yasuo Kanamori , Yuh Shiohara
- 申请人： Masaya Konishi , Kunihiko Hayashi , Youichi Enomoto , Shoji Tanaka , Yasuji Yamada , Kanshi Ohtsu , Yasuo Kanamori , Yuh Shiohara
- 申请人地址： JPX Osaka JPX Tokyo
- 专利权人： Sumitomo Electric Industries, Ltd.,International Superconductivity Technology Center
- 当前专利权人： Sumitomo Electric Industries, Ltd.,International Superconductivity Technology Center
- 当前专利权人地址： JPX Osaka JPX Tokyo
- 优先权： JPX5-252200 19930913
- 主分类号： C23C14/08
- IPC分类号： C23C14/08 ; C30B23/02 ; C30B23/08 ; C30B25/06 ; C30B25/18 ; C30B29/22 ; H01L21/203 ; H01L39/24 ; C30B23/00
摘要：
The present invention is directed to a method for growing a superconductive film on a superconductive substrate in order to produce a bulk single crystal. According to a preferred embodiment, an oxide superconductive film of a material which is the same or similar to the substrate material is epitaxially grown at a temperature between 450.degree. C. and 800.degree. C. so that the film and substrate have the same lattice orientations. According to the present invention, problems associated with conventional films having non-superconductor substrates (e.g., MgO and SrTiO.sub.3) are avoided.
公开/授权文献
- US4928663A Enhanced air-flow convection oven 公开/授权日：1990-05-29
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