发明授权
US5528083A Thin film chip capacitor for electrical noise reduction in integrated
circuits
失效
用于集成电路中电噪声降低的薄膜片式电容器
- 专利标题: Thin film chip capacitor for electrical noise reduction in integrated circuits
- 专利标题(中): 用于集成电路中电噪声降低的薄膜片式电容器
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申请号: US317900申请日: 1994-10-04
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公开(公告)号: US5528083A公开(公告)日: 1996-06-18
- 发明人: Deviprasad Malladi , Eric L. Bogatin , Bahram Zand
- 申请人: Deviprasad Malladi , Eric L. Bogatin , Bahram Zand
- 申请人地址: CA Mountain View
- 专利权人: Sun Microsystems, Inc.
- 当前专利权人: Sun Microsystems, Inc.
- 当前专利权人地址: CA Mountain View
- 主分类号: H01G4/33
- IPC分类号: H01G4/33 ; H01L21/60 ; H01L21/822 ; H01L23/495 ; H01L23/50 ; H01L23/64 ; H01L27/04 ; H01L23/12 ; H01L23/14 ; H01L23/522
摘要:
An integrated circuit chip and flat capacitor assembly are connected with short bonding wires to reduce electrical noise. A flat chip capacitor is coupled to the chip and includes a first electrode, a second electrode and a dielectric layer disposed between the electrodes. The ground and power bonding pads of an integrated circuit chip are coupled to a number of terminals arranged in a row near the outer edge of the capacitor, where each of the terminals is coupled to one of the electrodes. The terminals of the capacitor are connected to a number of package leads of a lead frame or a other integrated circuit package. The invention includes embodiments in which the chip is placed on top of the capacitor, the capacitor is placed on top of the chip, and a flex circuit of a micro ball grid array is placed on a capacitor which is positioned on a chip.
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