发明授权
- 专利标题： Apparatus for forming a dielectric layer
- 专利标题（中）： 用于形成电介质层的装置
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申请号： US465015申请日： 1995-06-05
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公开(公告)号： US5560778A公开(公告)日： 1996-10-01
- 发明人: In-Seon Park , Myoung-Bum Lee , Chang-Gee Hong , Chang-Gyu Kim , U-In Chung
- 申请人： In-Seon Park , Myoung-Bum Lee , Chang-Gee Hong , Chang-Gyu Kim , U-In Chung
- 申请人地址： KRX Suwon
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KRX Suwon
- 优先权： KRX93-17552 19930831
- 主分类号： H01L21/205
- IPC分类号： H01L21/205 ; C23C16/02 ; C23C16/40 ; C23C16/44 ; H01L21/31 ; H01L21/3105 ; H01L21/316 ; H01L21/3205 ; C23C16/00
摘要：
A deposition rate of a dielectric material is varied with the electrical polarity of an underlying layer to obtain excellent deposition and planarization characteristics. A conductive layer and the underlying dielectric are surface-treated to have different electrical polarities so that the dielectric is formed by using the difference of deposition rates of the dielectric material between that on the conductive layer and that on the underlying dielectric. A CVD apparatus having a DC power source connected between a susceptor and a gas injection portion thereof is provided. The deposition and planarization can be performed at low temperatures and are simplified in process.
公开/授权文献
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