发明授权
- 专利标题： Artificial lattice film and magneto-resistance effect element using the same
- 专利标题（中）： 使用人造晶格膜和磁阻效应元件
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申请号： US356588申请日： 1994-12-15
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公开(公告)号： US5568115A公开(公告)日： 1996-10-22
- 发明人: Hiroshi Kano , Atsuko Suzuki , Kiyoshi Kagawa , Akihiko Okabe
- 申请人： Hiroshi Kano , Atsuko Suzuki , Kiyoshi Kagawa , Akihiko Okabe
- 申请人地址： JPX Tokyo
- 专利权人： Sony Corporation
- 当前专利权人： Sony Corporation
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX5-329317 19931227
- 主分类号： G11B5/39
- IPC分类号： G11B5/39 ; H01F10/08 ; H01F10/14 ; H01F10/32 ; H01L43/08 ; H01L43/10 ; H01L43/00
摘要：
An artificial lattice film is constituted as a multilayered film in which magnetic layers containing Cu of 1.about.50 atomic percentage and at least one component selected from Fe, Ni and Co and conductive layers are stacked one after another. By forming such an artificial lattice film on a non-magnetic substrate, a magneto-resistance effect element having excellent characteristic for use as magnetic head or magnetic sensor is provided.
公开/授权文献
- US6146039A Mud box for joint compound application 公开/授权日：2000-11-14
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