公开(公告)号：US5699214A

公开(公告)日：1997-12-16

申请号：US665353

申请日：1996-06-17

申请人： Hiroshi Kano ,  Kenji Katori ,  Kazuhiko Hayashi ,  Akihiko Okabe ,  Kiyoshi Kagawa ,  Atsuko Suzuki

发明人： Hiroshi Kano ,  Kenji Katori ,  Kazuhiko Hayashi ,  Akihiko Okabe ,  Kiyoshi Kagawa ,  Atsuko Suzuki

IPC分类号： G01D5/245 ,  G01B7/00 ,  G01D5/14 ,  G01D5/16 ,  G01P3/50 ,  G01R33/09 ,  G11B5/008 ,  G11B5/10 ,  G11B5/37 ,  G11B5/39 ,  G11B5/48 ,  H01L43/06 ,  H01L43/08 ,  G11B5/33 ,  G01P3/42

CPC分类号： B82Y10/00 ,  B82Y25/00 ,  G01B7/003 ,  G01D5/145 ,  G01P3/50 ,  G11B5/008 ,  G11B5/10 ,  G11B5/37 ,  G11B5/39 ,  G11B5/488 ,  G11B2005/3996

摘要： A magnetic information detecting apparatus is disclosed including a recording medium in which magnetic information is recorded and a magnetic field detection unit for detecting the magnetic information, the magnetic field detection unit having its magnetic field detecting section formed of a magnetoresistive element or a Hall element, the magnetic field detecting section surrounding peripheries of the recording medium. The recording medium has a substantially circular cross section. The magnetoresistive element has a structure of an artificial multilayer film formed by alternately stacking a conductor layer and a magnetic layer. The magnetic field detection unit has a soft magnetic body for conducting a magnetic field to the magnetic field detecting section.

摘要翻译： 公开了一种磁信息检测装置，其包括记录有磁信息的记录介质和用于检测磁信息的磁场检测单元，该磁场检测单元具有由磁阻元件或霍尔元件形成的磁场检测部， 所述磁场检测部分围绕所述记录介质的周边。 记录介质具有大致圆形的横截面。 磁阻元件具有通过交替层叠导体层和磁性层而形成的人造多层膜的结构。 磁场检测单元具有用于对磁场检测部进行磁场的软磁体。

公开(公告)号：US5568115A

公开(公告)日：1996-10-22

申请号：US356588

申请日：1994-12-15

申请人： Hiroshi Kano ,  Atsuko Suzuki ,  Kiyoshi Kagawa ,  Akihiko Okabe

发明人： Hiroshi Kano ,  Atsuko Suzuki ,  Kiyoshi Kagawa ,  Akihiko Okabe

IPC分类号： G11B5/39 ,  H01F10/08 ,  H01F10/14 ,  H01F10/32 ,  H01L43/08 ,  H01L43/10 ,  H01L43/00

CPC分类号： B82Y25/00 ,  H01F10/324 ,  H01L43/10

摘要： An artificial lattice film is constituted as a multilayered film in which magnetic layers containing Cu of 1.about.50 atomic percentage and at least one component selected from Fe, Ni and Co and conductive layers are stacked one after another. By forming such an artificial lattice film on a non-magnetic substrate, a magneto-resistance effect element having excellent characteristic for use as magnetic head or magnetic sensor is provided.

摘要翻译： 人造晶格膜构成为多层膜，其中含有1％F原子百分比的Cu和至少一种选自Fe，Ni和Co的组分和导电层的磁性层的层叠在一起。 通过在非磁性基板上形成这样的人造晶格膜，提供了具有优异的用作磁头或磁传感器的特性的磁阻效应元件。

公开(公告)号：US5828526A

公开(公告)日：1998-10-27

申请号：US690756

申请日：1996-08-01

申请人： Kiyoshi Kagawa ,  Yoichi Negoro ,  Akihiko Okabe ,  Hiroshi Kano

发明人： Kiyoshi Kagawa ,  Yoichi Negoro ,  Akihiko Okabe ,  Hiroshi Kano

IPC分类号： G11B5/39 ,  H01L43/08 ,  H01L43/10 ,  H01L43/00

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B5/3932 ,  H01L43/10 ,  G11B2005/3996 ,  Y10S428/90 ,  Y10T428/1129

摘要： A magnetoresistance effect element is provided with a magnetoresistance effect film (MR film) formed of alternative laminations of magnetic layers (for example, soft magnetic layers such as Fe--Ni--Co alloy layers) which are coupled anti-ferromagnetically with each other between adjacent magnetic layers and non-magnetic layers (for example, non-magnetic layers such as Cu layers) and provided with a bias soft magnetic layer (for example, SAL layer) for application of a bias magnetic filed to the magnetoresistance effect film, where the anisotropic magnetic field (Hk) in the plane of the bias medium layer is 5 Oe.ltoreq.Hk.ltoreq.15 Oe.

摘要翻译： 磁阻效应元件设置有由磁性层（例如Fe-Ni-Co合金层的软磁性层）的替代叠层形成的磁阻效应膜（MR膜），它们在相邻之间相互反铁磁结合 磁性层和非磁性层（例如，诸如Cu层的非磁性层），并且设置有偏置软磁层（例如，SAL层），用于向磁阻效应膜施加偏置磁场，其中 偏置介质层平面内的各向异性磁场（Hk）为5Oe / Hk 15 Oe。

公开(公告)号：US5903708A

公开(公告)日：1999-05-11

申请号：US453788

申请日：1995-05-30

申请人： Hiroshi Kano ,  Atsuko Suzuki ,  Toshihiko Yaoi

发明人： Hiroshi Kano ,  Atsuko Suzuki ,  Toshihiko Yaoi

IPC分类号： G01R33/09 ,  H01L43/00

CPC分类号： B82Y25/00 ,  G01R33/093

摘要： A magneto-resistance effect film of an artificial lattice film structure having an alternate lamination of a conductor layer and a magnetic layer, or a magneto-resistance effect film of a spin bulb structure having a lamination of a magnetic layer, a conductor layer and a magnetic layer in that order. The conducting layer is mainly composed of an element selected from the group consisting of Cu, Ag and Cr and also contains 0.1 to 30 atomic percent of an addition element having an upper limit of solid solution at room temperature with respect to the element as the main component of not more than 1 percent. Alternatively, the magnetic layer is mainly composed of Fe, Co or Ni and also contains 0.1 to 30 atomic percent of an addition element having an upper limit of solid solution at room temperature with respect to the element as the main component of not more than 1%. Additionally, the thermal resistance can be improved by utilizing a base plate with a heat conductivity of not less than 2 W/mK.

摘要翻译： 具有导体层和磁性层的交替叠层的人造晶格膜结构的磁阻效应膜或具有磁性层，导体层和导体层的层叠的自旋电极结构的磁阻效应膜 磁层。 导电层主要由选自Cu，Ag和Cr的元素组成，并且相对于作为主要元素，在室温下还含有0.1至30原子％的具有固溶上限的添加元素 组成部分不超过1％。 或者，磁性层主要由Fe，Co或Ni组成，并且相对于作为主要成分的元素的室温下，还含有0.1〜30原子％的相对于作为主成分的元素的固溶上限的添加元素 ％。 此外，通过利用导热率不低于2W / mK的基板可以提高耐热性。

公开(公告)号：US10764495B2

公开(公告)日：2020-09-01

申请号：US16217536

申请日：2018-12-12

申请人： Hiroyasu Uehara ,  Masakazu Terauchi ,  Masashi Miyata ,  Hiroshi Kano ,  Akira Nakano ,  Takeyoshi Nishimura

发明人： Hiroyasu Uehara ,  Masakazu Terauchi ,  Masashi Miyata ,  Hiroshi Kano ,  Akira Nakano ,  Takeyoshi Nishimura

IPC分类号： H04N5/262 ,  H04N5/232 ,  H04N5/347 ,  H04N5/349

摘要： An image processing apparatus includes processing circuitry. The processing circuitry is configured to detect a positional shift amount of each of a plurality of images; select a composite target image from the plurality of images based on the detected positional shift amount; and obtain a composite image based on the positional shift amount and the selected composite target image.

公开(公告)号：US20130082659A1

公开(公告)日：2013-04-04

申请号：US13614602

申请日：2012-09-13

申请人： Hiroshi Kano

发明人： Hiroshi Kano

IPC分类号： H02J7/00 ,  H02J9/00 ,  H01M2/10 ,  B60L1/00

CPC分类号： H01M2/105 ,  Y10T307/625

摘要： Provided is a battery pack including: an exterior case formed with one or more hole sections; a battery cell in which a positive electrode terminal section is formed on one end surface thereof and a negative electrode terminal section is formed on the other end surface thereof; a battery holder having a plurality of battery cell receiving sections receiving the battery cell; and a metal plate joined to the battery holder and formed with a terminal contact section.

摘要翻译： 提供一种电池组，其包括：形成有一个或多个孔部分的外壳; 在其一个端面形成有正极端子部的电池单元，在其另一端面上形成负极端子部; 电池座，具有接收所述电池单元的多个电池单元容纳部; 以及与电池座连接并形成有端子接触部的金属板。

公开(公告)号：US08093301B2

公开(公告)日：2012-01-10

申请号：US12064917

申请日：2006-08-25

申请人： Hiroshi Kano ,  Syuji Ikegami

发明人： Hiroshi Kano ,  Syuji Ikegami

IPC分类号： A61K31/192 ,  A61K31/136 ,  A61K31/122 ,  A61P37/08

CPC分类号： A61K31/122 ,  A61K31/135 ,  A61K31/136 ,  A61K31/192 ,  A61K31/196

摘要： The inventors have found that vitamin K3 and vitamin K5 which may be used in pharmaceuticals and foods or ACNQ, DHNA, or the like which can stimulate the growth of bifidobacteria can inhibit degranulation of basophil-like cells, exhibit a potent degranulation-inhibiting effect, and are useful anti-allergic agents or foods. The present invention provides an anti-allergic agent containing, as an active ingredient, one or more species selected from among 2-amino-3-carboxy-1,4-naphthoquinone, 1,4-dihydroxy-2-naphthoic acid, 1,4-naphthoquinone, 4-amino-2-methyl-1-naphthol, 2-methyl-1,4-naphthoquinone, 2-amino-3-chloro-1,4-naphthoquinone, and a salt thereof.

摘要翻译： 本发明人发现可用于药物和食品中的维生素K 3和维生素K5或可刺激双歧杆菌生长的ACNQ，DHNA等可以抑制嗜碱性粒细胞的脱颗粒，显示出有效的脱颗粒抑制作用， 并且是有用的抗过敏剂或食物。 本发明提供一种抗过敏剂，其含有选自2-氨基-3-羧基-1,4-萘醌，1,4-二羟基-2-萘甲酸，1,6-己二醇， 4-萘基醌，4-氨基-2-甲基-1-萘酚，2-甲基-1,4-萘醌，2-氨基-3-氯-1,4-萘醌及其盐。

公开(公告)号：US20100328992A1

公开(公告)日：2010-12-30

申请号：US12817327

申请日：2010-06-17

申请人： Hiroshi Kano ,  Yutaka Higo ,  Tetsuya Yamamoto ,  Hiroyuki Ohmori ,  Masanori Hosomi ,  Shinichiro Kusunoki ,  Yuki Oishi ,  Kazutaka Yamane ,  Kazuhiro Bessho ,  Minoru Ikarashi

发明人： Hiroshi Kano ,  Yutaka Higo ,  Tetsuya Yamamoto ,  Hiroyuki Ohmori ,  Masanori Hosomi ,  Shinichiro Kusunoki ,  Yuki Oishi ,  Kazutaka Yamane ,  Kazuhiro Bessho ,  Minoru Ikarashi

IPC分类号： G11C11/00

CPC分类号： H01L43/08 ,  G11C11/005 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1673 ,  G11C17/16 ,  G11C29/50 ,  G11C2029/4402 ,  Y10S977/935

摘要： A memory includes: a plurality of memory devices, each including a tunnel magnetic resistance effect device containing a magnetization free layer in which a direction of magnetization can be reversed, a tunnel barrier layer including an insulating material, and a magnetization fixed layer provided with respect to the magnetization free layer via the tunnel barrier layer with a fixed direction of magnetization; a random access memory area in which information is recorded using the direction of magnetization of the magnetization free layer of the memory device; and a read only memory area in which information is recorded depending on whether there is breakdown of the tunnel barrier layer of the memory device or not.

摘要翻译： 存储器包括：多个存储器件，每个存储器件包括隧道磁阻效应器件，其包含磁化方向可反转的磁化自由层，包括绝缘材料的隧道势垒层和与之相关的磁化固定层 经由具有固定的磁化方向的隧道势垒层到达磁化自由层; 使用存储装置的磁化自由层的磁化方向记录信息的随机存取存储区域; 以及根据存储器件的隧道势垒层的故障是否记录信息的只读存储区域。

公开(公告)号：US20100314673A1

公开(公告)日：2010-12-16

申请号：US12796802

申请日：2010-06-09

申请人： Kazutaka Yamane ,  Masanori Hosomi ,  Hiroshi Kano ,  Hiroyuki Ohmori ,  Minoru Ikarashi ,  Tetsuya Yamamoto ,  Kazuhiro Bessho ,  Yutaka Higo ,  Yuki Oishi ,  Shinichiro Kusunoki

发明人： Kazutaka Yamane ,  Masanori Hosomi ,  Hiroshi Kano ,  Hiroyuki Ohmori ,  Minoru Ikarashi ,  Tetsuya Yamamoto ,  Kazuhiro Bessho ,  Yutaka Higo ,  Yuki Oishi ,  Shinichiro Kusunoki

IPC分类号： H01L27/115

CPC分类号： H01L27/228 ,  B82Y25/00 ,  G11C11/161 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3277 ,  H01L43/08 ,  Y10S977/933 ,  Y10S977/935

摘要： A memory device includes: a memory layer that retains information based on a magnetization state of a magnetic material, a first intermediate layer and a second intermediate layer that are provided to sandwich the memory layer and are each formed of an insulator, a first fixed magnetic layer disposed on an opposite side of the first intermediate layer from the memory layer, a second fixed magnetic layer disposed on an opposite side of the second intermediate layer from the memory layer, and a nonmagnetic conductive layer provided between either the first intermediate layer or the second intermediate layer and the memory layer, the memory device being configured so that spin-polarized electrons are injected thereinto in a stacking direction to change the magnetization direction of the memory layer, thereby storing information in the memory layer.

摘要翻译： 存储器件包括：存储层，其基于磁性材料的磁化状态保持信息，第一中间层和第二中间层，其被设置为夹持存储层，并且各自由绝缘体，第一固定磁体 层，设置在与存储层相反的第一中间层的相对侧上;第二固定磁性层，设置在与存储层相反的第二中间层的相反侧;以及非磁性导电层，设置在第一中间层或第二中间层之间 第二中间层和存储层，存储器件被配置为使得自旋极化电子在层叠方向上被注入到其中以改变存储层的磁化方向，从而将信息存储在存储层中。

公开(公告)号：US20100135068A1

公开(公告)日：2010-06-03

申请号：US12629660

申请日：2009-12-02

申请人： Minoru Ikarashi ,  Yutaka Higo ,  Masanori Hosomi ,  Hiroshi Kano ,  Shinichiro Kusunoki ,  Hiroyuki Ohmori ,  Yuki Oishi ,  Tetsuya Yamamoto ,  Kazutaka Yamane

发明人： Minoru Ikarashi ,  Yutaka Higo ,  Masanori Hosomi ,  Hiroshi Kano ,  Shinichiro Kusunoki ,  Hiroyuki Ohmori ,  Yuki Oishi ,  Tetsuya Yamamoto ,  Kazutaka Yamane

IPC分类号： G11C11/02 ,  H01L43/00

CPC分类号： H01L43/08 ,  G11C11/161 ,  H01L27/228

摘要： A resistance-change memory device is provided and includes a stack constituting a tunnel magnetoresistance effect element that has a magnetic layer in which a direction of magnetization is switchable and that is formed on a conductive layer, and the stack is included in a resistance-change memory cell performing data writing utilizing a spin transfer effect caused by current injection. The stack is formed such that a line connecting centers of respective layers of the stack is tilted with respect to a direction perpendicular to a surface of the conductive layer having the stack formed thereon.

摘要翻译： 提供一种电阻变化存储器件，并且包括构成隧道磁阻效应元件的堆叠体，该堆叠层具有其中磁化方向可切换并形成在导电层上的磁性层，并且该堆叠被包括在电阻变化 使用由电流注入引起的自旋转移效应来执行数据写入的存储单元。 堆叠形成为使得连接堆叠的各层的中心的线相对于垂直于其上形成有叠层的导电层的表面的方向倾斜。