发明授权
- 专利标题： Method for manufacturing a semiconductor device utilizing an anodic oxidation
- 专利标题（中）： 利用阳极氧化制造半导体器件的方法
-
申请号： US401698申请日： 1995-03-10
-
公开(公告)号： US5595638A公开(公告)日： 1997-01-21
- 发明人: Toshimitsu Konuma , Akira Sugawara , Yukiko Uehara
- 申请人： Toshimitsu Konuma , Akira Sugawara , Yukiko Uehara
- 申请人地址： JPX Atsugi
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JPX Atsugi
- 优先权： JPX6-074024 19940317
- 主分类号： C25D11/04
- IPC分类号： C25D11/04 ; C25D11/02 ; H01L21/28 ; H01L21/316 ; H01L21/3205 ; H01L21/321 ; H01L21/336 ; H01L21/768 ; H01L23/52 ; H01L23/522 ; H01L29/78 ; H01L29/786 ; C25D5/00 ; C25D5/18 ; C25D5/48 ; C25D11/00
摘要：
An anodic oxide containing impurities at a low concentration and thereby improved in film quality, and a process for fabricating the same. The process comprises increasing the current between a metallic thin film and a cathode until a voltage therebetween reaches a predetermined value, and maintaining the voltage at the predetermined value thereafter.
公开/授权文献
信息查询
