发明授权
- 专利标题： Storage node process for deep trench-based DRAM
- 专利标题（中）： 深沟槽DRAM的存储节点处理
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申请号： US610912申请日： 1996-03-04
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公开(公告)号： US5656535A公开(公告)日： 1997-08-12
- 发明人: Herbert Ho , Radhika Srinivasan , Scott D. Halle , Erwin Hammerl , David M. Dobuzinsky , Jack A. Mandelman , Mark Anthony Jaso
- 申请人： Herbert Ho , Radhika Srinivasan , Scott D. Halle , Erwin Hammerl , David M. Dobuzinsky , Jack A. Mandelman , Mark Anthony Jaso
- 申请人地址： DEX Munich NY Armonk
- 专利权人： Siemens Aktiengesellschaft,International Business Machines Corporation
- 当前专利权人： Siemens Aktiengesellschaft,International Business Machines Corporation
- 当前专利权人地址： DEX Munich NY Armonk
- 主分类号： H01L27/04
- IPC分类号： H01L27/04 ; H01L21/02 ; H01L21/762 ; H01L21/822 ; H01L21/8242 ; H01L27/108 ; H01L21/70
摘要：
A simplified method of fabricating a storage node for a deep trench-based DRAM on a semiconductor substrate. The method involves the etching a trench in a surface of the substrate and then forming a layer of dielectric material on a sidewall of the trench the top portion of which is subsequently removed from the sidewall. Next, a layer of oxide is grown on the exposed portion of the sidewall. A portion of this layer of oxide is then removed from the sidewall in order to orient the layer of oxide a predetermined distance from the surface of the substrate. Finally, the trench is filled with a semiconductive material.
公开/授权文献
- US5077967A Profile matched diffuser 公开/授权日：1992-01-07
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