发明授权
- 专利标题： Light-emitting semiconductor device
- 专利标题（中）： 发光半导体器件
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申请号： US402659申请日： 1995-03-13
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公开(公告)号： US5696389A公开(公告)日： 1997-12-09
- 发明人: Masayuki Ishikawa , Hideto Sugawara , Yukie Nishikawa , Masaaki Onomura , Shinji Saito , Peter James Parbrook , Genichi Hatakoshi , Koichi Nitta , John Rennie , Hiroaki Yoshida , Atsushi Kamata
- 申请人： Masayuki Ishikawa , Hideto Sugawara , Yukie Nishikawa , Masaaki Onomura , Shinji Saito , Peter James Parbrook , Genichi Hatakoshi , Koichi Nitta , John Rennie , Hiroaki Yoshida , Atsushi Kamata
- 申请人地址： JPX Kawasaki
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JPX Kawasaki
- 优先权： JPX6-044451 19940315
- 主分类号： H01L27/15
- IPC分类号： H01L27/15 ; H01L33/06 ; H01L33/08 ; H01L33/10 ; H01L33/16 ; H01L33/20 ; H01L33/28 ; H01L33/32 ; H01L33/38 ; H01L33/40 ; H01L33/56 ; H01S5/042 ; H01S5/183 ; H01S5/40 ; H01L29/41 ; H01S3/19
摘要：
A light-emitting semiconductor device comprising an n-type cladding layer provided on a surface of a substrate and having concentric first and second parts, a first electrode mounted on the first part of the n-type cladding layer, a p-type cladding layer provided above the surface of the substrate and surrounding the first electrode and the second part of the n-type cladding layer, and a second electrode provided on the p-type cladding layer.
公开/授权文献
- US4503006A Method and apparatus for manufacturing tag pin assemblies 公开/授权日：1985-03-05
信息查询
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