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    Semiconductor light-emitting device with compound semiconductor layer
    2.
    发明授权
    Semiconductor light-emitting device with compound semiconductor layer 失效
    具有化合物半导体层的半导体发光器件

    公开(公告)号：US5488233A

    公开(公告)日：1996-01-30

    申请号：US208850

    申请日：1994-03-11

    申请人： Masayuki Ishikawa ,  Yukie Nishikawa ,  Shinji Saito ,  Peter J. Parbrook ,  Masaaki Onomura ,  Koichi Nitta ,  Genichi Hatakoshi

    发明人： Masayuki Ishikawa ,  Yukie Nishikawa ,  Shinji Saito ,  Peter J. Parbrook ,  Masaaki Onomura ,  Koichi Nitta ,  Genichi Hatakoshi

    IPC分类号： H01L33/00 ,  H01L33/28 ,  H01S5/20 ,  H01S5/223 ,  H01S5/30 ,  H01S5/347

    CPC分类号： H01L33/28 ,  B82Y20/00 ,  H01L33/0087 ,  H01S5/347 ,  H01S5/209 ,  H01S5/2238 ,  H01S5/3077

    摘要： This invention provides a semiconductor light-emitting device including a semiconductor substrate consisting of a compound semiconductor of elements in the third and fifth groups of the period table, a first compound semiconductor layer formed directly on at least a portion of the semiconductor substrate and consisting of a compound semiconductor containing at least In and P, and a second compound semiconductor formed directly on the first compound semiconductor layer and consisting of a compound semiconductor of elements in the second and sixth groups of the periodic table. With this arrangement, it is possible to sufficiently prevent the occurrence of defects in the interface between the semiconductor substrate and the second compound semiconductor layer consisting of the compound semiconductor of the elements in the second and sixth groups of the periodic table.

    摘要翻译： 本发明提供了一种半导体发光器件，其包括由周期表的第三和第五组中的元件的化合物半导体构成的半导体衬底，直接形成在半导体衬底的至少一部分上并由 至少含有In和P的化合物半导体和直接形成在第一化合物半导体层上并由元素周期表的第二和第六组元素的化合物半导体构成的第二化合物半导体。 通过这种布置，可以充分地防止半导体衬底与由周期表的第二组和第六组中的元件的化合物半导体组成的第二化合物半导体层之间的界面中的缺陷的发生。

    Light emitter with lowered heterojunction interface barrier
    5.
    发明授权
    Light emitter with lowered heterojunction interface barrier 失效
    具有降低的异质结界面屏障的发光体

    公开(公告)号：US6005263A

    公开(公告)日：1999-12-21

    申请号：US976916

    申请日：1997-11-24

    申请人： Shinji Saito ,  Masaaki Onomura ,  Yukie Nishikawa ,  Masayuki Ishikawa ,  Peter James Parbrook

    发明人： Shinji Saito ,  Masaaki Onomura ,  Yukie Nishikawa ,  Masayuki Ishikawa ,  Peter James Parbrook

    IPC分类号： H01L33/00 ,  H01L33/02

    CPC分类号： H01L33/025 ,  H01L33/007 ,  H01L33/0087

    摘要： A semiconductor device includes a first semiconductor layer formed of first semiconductor, a second semiconductor layer formed on the first semiconductor layer and formed of second semiconductor of a group different from a group to which the first semiconductor belongs, and a third semiconductor layer formed between the first and second semiconductor layers, the third semiconductor layer being one of a layer formed of third semiconductor of the same group as the first semiconductor and having an impurity concentration higher than the first semiconductor layer and a layer formed of fourth semiconductor of the same group as the second semiconductor and having an impurity concentration higher than the second semiconductor layer.

    摘要翻译： 半导体器件包括由第一半导体形成的第一半导体层，形成在第一半导体层上并由不同于第一半导体所属的基团的第二半导体形成的第二半导体层以及形成在第一半导体之间的第三半导体层 第一和第二半导体层，第三半导体层是由与第一半导体相同的组的第三半导体形成的层，其杂质浓度高于第一半导体层，由与第一半导体层相同的第四半导体形成的层 所述第二半导体具有高于所述第二半导体层的杂质浓度。

    Semicoductor device having a hetero interface with a lowered barrier
    6.
    发明授权
    Semicoductor device having a hetero interface with a lowered barrier 失效
    具有低阻挡层的异质界面的半导体器件

    公开(公告)号：US5821555A

    公开(公告)日：1998-10-13

    申请号：US618823

    申请日：1996-03-20

    申请人： Shinji Saito ,  Masaaki Onomura ,  Yukie Nishikawa ,  Masayuki Ishikawa ,  Peter James Parbrook

    发明人： Shinji Saito ,  Masaaki Onomura ,  Yukie Nishikawa ,  Masayuki Ishikawa ,  Peter James Parbrook

    IPC分类号： H01L33/00 ,  H01L33/02 ,  H01L29/26

    CPC分类号： H01L33/025 ,  H01L33/007 ,  H01L33/0087

    摘要： A semiconductor device includes a first semiconductor layer formed of first semiconductor, a second semiconductor layer formed on the first semiconductor layer and formed of second semiconductor of a group different from a group to which the first semiconductor belongs, and a third semiconductor layer formed between the first and second semiconductor layers, the third semiconductor layer being one of a layer formed of third semiconductor of the same group as the first semiconductor and having an impurity concentration higher than the first semiconductor layer and a layer formed of fourth semiconductor of the same group as the second semiconductor and having an impurity concentration higher than the second semiconductor layer.

    摘要翻译： 半导体器件包括由第一半导体形成的第一半导体层，形成在第一半导体层上并由不同于第一半导体所属的基团的第二半导体形成的第二半导体层以及形成在第一半导体之间的第三半导体层 第一和第二半导体层，第三半导体层是由与第一半导体相同的组的第三半导体形成的层，其杂质浓度高于第一半导体层，由与第一半导体层相同的第四半导体形成的层 所述第二半导体具有高于所述第二半导体层的杂质浓度。