公开(公告)号：US5696389A

公开(公告)日：1997-12-09

申请号：US402659

申请日：1995-03-13

申请人： Masayuki Ishikawa ,  Hideto Sugawara ,  Yukie Nishikawa ,  Masaaki Onomura ,  Shinji Saito ,  Peter James Parbrook ,  Genichi Hatakoshi ,  Koichi Nitta ,  John Rennie ,  Hiroaki Yoshida ,  Atsushi Kamata

发明人： Masayuki Ishikawa ,  Hideto Sugawara ,  Yukie Nishikawa ,  Masaaki Onomura ,  Shinji Saito ,  Peter James Parbrook ,  Genichi Hatakoshi ,  Koichi Nitta ,  John Rennie ,  Hiroaki Yoshida ,  Atsushi Kamata

IPC分类号： H01L27/15 ,  H01L33/06 ,  H01L33/08 ,  H01L33/10 ,  H01L33/16 ,  H01L33/20 ,  H01L33/28 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01L33/56 ,  H01S5/042 ,  H01S5/183 ,  H01S5/40 ,  H01L29/41 ,  H01S3/19

CPC分类号： H01L33/38 ,  B82Y20/00 ,  H01L33/20 ,  H01S5/18341 ,  H01L27/153 ,  H01L33/0079 ,  H01L33/145 ,  H01L33/382 ,  H01S2301/203 ,  H01S5/0422 ,  H01S5/0425 ,  H01S5/1835 ,  H01S5/347 ,  H01S5/4087

摘要： A light-emitting semiconductor device comprising an n-type cladding layer provided on a surface of a substrate and having concentric first and second parts, a first electrode mounted on the first part of the n-type cladding layer, a p-type cladding layer provided above the surface of the substrate and surrounding the first electrode and the second part of the n-type cladding layer, and a second electrode provided on the p-type cladding layer.

摘要翻译： 一种发光半导体器件，包括设置在基板的表面上并具有同心的第一和第二部分的n型覆层，安装在n型覆层的第一部分上的第一电极，p型覆层 设置在基板的表面上并且包围n型包覆层的第一电极和第二部分，以及设置在p型覆层上的第二电极。

公开(公告)号：US5780873A

公开(公告)日：1998-07-14

申请号：US689689

申请日：1996-08-13

申请人： Kazuhiko Itaya ,  Masahiro Yamamoto ,  Masaaki Onomura ,  Hidetoshi Fujimoto ,  Genichi Hatakoshi ,  Hideto Sugawara ,  Masayuki Ishikawa ,  John Rennie ,  Shinji Saito

发明人： Kazuhiko Itaya ,  Masahiro Yamamoto ,  Masaaki Onomura ,  Hidetoshi Fujimoto ,  Genichi Hatakoshi ,  Hideto Sugawara ,  Masayuki Ishikawa ,  John Rennie ,  Shinji Saito

IPC分类号： H01L27/15 ,  H01L33/06 ,  H01L33/08 ,  H01L33/14 ,  H01L33/16 ,  H01L33/20 ,  H01L33/32 ,  H01S5/00 ,  H01S5/02 ,  H01S5/323 ,  H01S5/343 ,  H01S5/40 ,  H01L33/00 ,  H01L29/04 ,  H01L31/036

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L27/156 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/16 ,  H01S5/0215 ,  H01S5/34333 ,  H01S5/0202 ,  H01S5/0208 ,  H01S5/021 ,  H01S5/0213 ,  H01S5/0217 ,  H01S5/0218 ,  H01S5/2231 ,  H01S5/2232 ,  H01S5/3202 ,  H01S5/32391 ,  H01S5/34326 ,  H01S5/4043 ,  H01S5/4087

摘要： A semiconductor light-emitting device comprises a semiconductor light-emitting device section of a hexagonal type; and an electrically conductive semiconductor substrate of a cubic type combined into the semiconductor light-emitting device, and having an orientation of its cleavage facet conformed to an orientation of the cleavage facet of one of semiconductor layers forming the semiconductor light-emitting device section. The substrate of the cubic type is cleaved so that the semiconductor light-emitting device section of the hexagonal type is induced to be cleaved, and that a mirror surface can be easily formed.

摘要翻译： 半导体发光器件包括六边形的半导体发光器件部分; 以及组合到半导体发光器件中的立方体的导电半导体衬底，并且其解理面的取向符合形成半导体发光器件部分的半导体层之一的解理面的取向。 立方体的基板被切割，使得六方型的半导体发光器件部分被诱导被切割，并且可以容易地形成镜面。

公开(公告)号：US5202895A

公开(公告)日：1993-04-13

申请号：US695088

申请日：1991-05-03

申请人： Koichi Nitta ,  Masayuki Ishikawa ,  Yukie Nishikawa ,  Hideto Sugawara ,  Minoru Watanabe ,  Masaki Okajima ,  Genichi Hatakoshi

发明人： Koichi Nitta ,  Masayuki Ishikawa ,  Yukie Nishikawa ,  Hideto Sugawara ,  Minoru Watanabe ,  Masaki Okajima ,  Genichi Hatakoshi

IPC分类号： H01S5/22 ,  H01S5/223 ,  H01S5/32 ,  H01S5/323 ,  H01S5/343

CPC分类号： B82Y20/00 ,  H01S5/2231 ,  H01S5/34326 ,  H01S5/2206 ,  H01S5/2209 ,  H01S5/221 ,  H01S5/3201 ,  H01S5/321 ,  H01S5/32325

摘要： A semiconductor laser device comprises a compound semiconductor substrate, a first cladding layer formed on the substrate, an active layer formed on the first cladding layer, made of In.sub.1-y (Ga.sub.1-x Al.sub.x).sub.y P material (0.ltoreq.x

公开(公告)号：US5321712A

公开(公告)日：1994-06-14

申请号：US10844

申请日：1993-01-29

申请人： Kazuhiko Itaya ,  Koichi Nitta ,  Genichi Hatakoshi ,  Yukie Nishikawa ,  Hideto Sugawara ,  Mariko Suzuki

发明人： Kazuhiko Itaya ,  Koichi Nitta ,  Genichi Hatakoshi ,  Yukie Nishikawa ,  Hideto Sugawara ,  Mariko Suzuki

IPC分类号： H01L33/12 ,  H01L33/14 ,  H01L33/30 ,  H01S5/00 ,  H01S5/042 ,  H01S5/223 ,  H01S5/30 ,  H01S5/32 ,  H01S5/323 ,  H01S3/19

CPC分类号： H01L33/30 ,  H01S5/32308 ,  H01S5/223 ,  H01S5/2231 ,  H01S5/3086 ,  H01S5/321 ,  H01S5/3211 ,  H01S5/32325

摘要： A semiconductor light-emitting element includes a semiconductor substrate of a first conductivity type, a lower cladding layer formed on the semiconductor substrate and constituted by an InGaAlP-based compound of the first conductivity type, an active layer formed on the lower cladding layer, and constituted by a material selected from the group consisting of GaAs, GaAlAs, and InGaAs, and an upper cladding layer formed on the active layer, and constituted by the InGaAlP-based compound of a second conductivity type, wherein the InGaAlP-based compound is represented by a formula In.sub.y (Ga.sub.1-x Al.sub.x).sub.y P, where x is in the range of 0.3 to 0.7 and y is in the range of 0.45 to 0.55.

摘要翻译： 半导体发光元件包括第一导电类型的半导体衬底，形成在半导体衬底上并由第一导电类型的InGaAlP基化合物构成的下包层，形成在下敷层上的有源层，以及 由选自GaAs，GaAlAs和InGaAs的材料构成，以及形成在有源层上的上覆层，由第二导电类型的InGaAlP基化合物构成，其中以InGaAlP为基础的化合物被表示 通过式Iny（Ga1-xAlx）yP，其中x在0.3至0.7的范围内，y在0.45至0.55的范围内。

公开(公告)号：US5153889A

公开(公告)日：1992-10-06

申请号：US747128

申请日：1991-08-19

申请人： Hideto Sugawara ,  Masayuki Ishikawa ,  Yoshihiro Kokubun ,  Yukie Nishikawa ,  Shigeya Naritsuka ,  Kazuhiko Itaya ,  Genichi Hatakoshi ,  Mariko Suzuki

发明人： Hideto Sugawara ,  Masayuki Ishikawa ,  Yoshihiro Kokubun ,  Yukie Nishikawa ,  Shigeya Naritsuka ,  Kazuhiko Itaya ,  Genichi Hatakoshi ,  Mariko Suzuki

IPC分类号： H01L33/00 ,  H01L33/10 ,  H01L33/14 ,  H01L33/30 ,  H01S5/042 ,  H01S5/183 ,  H01S5/22 ,  H01S5/30 ,  H01S5/32 ,  H01S5/323 ,  H01S5/343

CPC分类号： H01L33/145 ,  B82Y20/00 ,  H01L33/0025 ,  H01L33/0066 ,  H01L33/10 ,  H01L33/14 ,  H01L33/30

摘要： Disclosed is a semiconductor light emitting device, comprising a semiconductor substrate, a double hetero structure portion formed on the front surface of the substrate and consisting of an InGaAlP active layer and lower and upper clad layers having the active layer sandwiched therebetween, a first electrode formed in a part of the surface of the double hetero structure portion, and a second electrode formed on the back surface of the substrate. A current diffusion layer formed of GaAlAs is interposed between the double hetero structure portion and the first electrode, said current diffusion layer having a thickness of 5 to 30 microns and a carrier concentration of 5.times.10.sup.17 cm.sup.-3 to 5.times.10.sup.18 cm.sup.-3.

摘要翻译： 公开了一种半导体发光器件，包括半导体衬底，形成在衬底的前表面上并由InGaAlP有源层组成的双异质结构部分和其间夹有有源层的下和上和外包层，形成的第一电极 在双异质结构部分的表面的一部分中，以及形成在基板的背面上的第二电极。 由GaAlAs形成的电流扩散层介于双异质结构部分和第一电极之间，所述电流扩散层的厚度为5至30微米，载流子浓度为5×10 17 cm -3至5×10 18 cm -3。

公开(公告)号：US5048035A

公开(公告)日：1991-09-10

申请号：US530120

申请日：1990-05-29

申请人： Hideto Sugawara ,  Masayuki Ishikawa ,  Yoshihiro Kokubun ,  Yukie Nishikawa ,  Shigeya Naritsuka

发明人： Hideto Sugawara ,  Masayuki Ishikawa ,  Yoshihiro Kokubun ,  Yukie Nishikawa ,  Shigeya Naritsuka

IPC分类号： H01L33/00 ,  H01L33/14 ,  H01L33/30 ,  H01L33/38 ,  H01S5/042 ,  H01S5/183 ,  H01S5/22 ,  H01S5/30 ,  H01S5/32 ,  H01S5/343

CPC分类号： H01L33/38 ,  B82Y20/00 ,  H01L33/0025 ,  H01L33/14 ,  H01L33/145 ,  H01L33/30 ,  H01L33/387

摘要： A semiconductor light emitting device, especially, a light emitting diode includes a compound semiconductor substrate of a first conductivity type, an InGaAlP layer formed on the substrate and having a light emitting region, a GaAlAs layer of a second conductivity type formed on the InGaAlP layer and having a larger band gap than that of the InGaAlP layer, and an electrode formed on a part of the GaAlAs layer. The light emitting diode emits light from a surface at the electrode side except for the electrode. A current from the electrode is widely spread by the GaAlAs layer to widely spread a light emitting region.

摘要翻译： 一种半导体发光器件，特别是发光二极管，包括第一导电类型的化合物半导体衬底，形成在衬底上并具有发光区域的InGaAlP层，形成在InGaAlP层上的第二导电类型的GaAlAs层 并且具有比InGaAlP层更大的带隙，以及形成在GaAlAs层的一部分上的电极。 发光二极管从除了电极之外的电极侧的表面发光。 来自电极的电流被GaAlAs层广泛扩散，以广泛扩散发光区域。

公开(公告)号：US5034957A

公开(公告)日：1991-07-23

申请号：US307278

申请日：1989-02-07

申请人： Yasuo Ohba ,  Yukie Nishikawa ,  Hajime Okuda ,  Masayuki Ishikawa ,  Hideto Sugawara ,  Hideo Shiozawa ,  Yoshihiro Kokubun

发明人： Yasuo Ohba ,  Yukie Nishikawa ,  Hajime Okuda ,  Masayuki Ishikawa ,  Hideto Sugawara ,  Hideo Shiozawa ,  Yoshihiro Kokubun

IPC分类号： H01L33/00 ,  H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/30 ,  H01S5/323

CPC分类号： H01S5/20 ,  H01L33/0062 ,  H01S5/305 ,  H01S5/32325 ,  H01S5/2059 ,  H01S5/2206 ,  H01S5/2231 ,  H01S5/3054

摘要： A semiconductor laser device using double heterostructure comprised of In.sub.x Ga.sub.y Al.sub.1-x-y P (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1), capable of preventing the leakage of the carriers and thereby reducing the threshold current, being operative with small threshold current density and at high temperature, and having a long lifetime. The device may include a double heterostructure formed on the GaAs substrate, comprised of In.sub.x Ga.sub.y Al.sub.1-x-y P (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1) including an active layer, the active layer having an impurity concentration not greater than 5.times.10.sup.16 cm.sup.-3. The device may include a double heterostructure formed on the GaAs substrate, comprised of InGaP active layer and p-type In.sub.q (Ga.sub.1-z Al.sub.z).sub.q P (0.ltoreq.q.ltoreq.1, 0.ltoreq.z.ltoreq.1) cladding layer with a value of z between 0.65 and 0.75. The device may include a double heterostructure formed on the GaAs substrate, comprised of In.sub.x Ga.sub.y Al.sub.1-x-y P (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1) including an n-type cladding layer and an p-type cladding layer, one of the n-type cladding layer and the p-type cladding layer being Si-doped. A method of manufacturing the device is also disclosed.

公开(公告)号：US5693963A

公开(公告)日：1997-12-02

申请号：US526700

申请日：1995-09-11

申请人： Hidetoshi Fujimoto ,  Koichi Nitta ,  Masayuki Ishikawa ,  Hideto Sugawara ,  Yoshihiro Kokubun ,  Masahiro Yamamoto

发明人： Hidetoshi Fujimoto ,  Koichi Nitta ,  Masayuki Ishikawa ,  Hideto Sugawara ,  Yoshihiro Kokubun ,  Masahiro Yamamoto

IPC分类号： H01L33/00 ,  H01L33/32

CPC分类号： H01L33/325 ,  H01L33/007

摘要： A light emitting diode is arranged on a sapphire substrate. The light emitting diode includes an n-GaN layer, an n-InGaN light-emitting layer, a p-AlGaN layer and a P-GaN layer, which are grown through vapor phase growth in this sequence. Within the p-GaN layer and p-AlGaN layer, 1.times.10.sup.20 cm.sup.-3 of Mg and 2.times.10.sup.19 cm.sup.-3 of Mg are contained, respectively. Within each of the n-GaN layer and n-InGaN light-emitting layer, 5.times.10.sup.18 cm.sup.-3 of hydrogen is contained, thereby preventing Mg from diffusing therein from the p-GaN layer and p-AlGaN layer.

摘要翻译： 发光二极管布置在蓝宝石衬底上。 发光二极管包括以这种顺序气相生长生长的n-GaN层，n-InGaN发光层，p-AlGaN层和P-GaN层。 在p-GaN层和p-AlGaN层内，分别含有1×10 20 cm -3的Mg和2×10 19 cm -3的Mg。 在n-GaN层和n-InGaN发光层的每一个中，含有5×10 18 cm -3的氢，从而防止Mg从p-GaN层和p-AlGaN层扩散。

公开(公告)号：US20120153439A1

公开(公告)日：2012-06-21

申请号：US13102204

申请日：2011-05-06

申请人： Hideto Sugawara ,  Masaaki Onomura

发明人： Hideto Sugawara ,  Masaaki Onomura

IPC分类号： H01L29/20 ,  H01L21/20

CPC分类号： H01L33/0025 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02661 ,  H01L29/2003 ,  H01L33/007

摘要： According to one embodiment, stacked layers of a nitride semiconductor include a substrate, a single crystal layer and a nitride semiconductor layer. The substrate does not include a nitride semiconductor and has a protrusion on a major surface. The single crystal layer is provided directly on the major surface of the substrate to cover the protrusion, and includes a crack therein. The nitride semiconductor layer is provided on the single crystal layer.

摘要翻译： 根据一个实施例，氮化物半导体的堆叠层包括衬底，单晶层和氮化物半导体层。 基板不包括氮化物半导体，并且在主表面上具有突起。 单晶层直接设置在基板的主表面上以覆盖突起，并且在其中包括裂纹。 氮化物半导体层设置在单晶层上。

公开(公告)号：US07333523B2

公开(公告)日：2008-02-19

申请号：US11484006

申请日：2006-07-11

申请人： Akira Tanaka ,  Hideto Sugawara ,  Chie Hongo ,  Yoshiyuki Harada ,  Masaaki Onomura

发明人： Akira Tanaka ,  Hideto Sugawara ,  Chie Hongo ,  Yoshiyuki Harada ,  Masaaki Onomura

IPC分类号： H01S5/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/2009 ,  H01S5/22 ,  H01S5/2214 ,  H01S5/3054

摘要： A semiconductor laser device comprising: a first cladding layer of a first conductivity type; an active layer provided on the first cladding layer and having a quantum well structure; an overflow blocking layer of a second conductivity type provided on the overflow blocking layer. The active layer includes a region having an impurity concentration is 3×1017 cm−3 or more and having a thickness of 30 nm or less between the overflow blocking layer and a well layer in the active layer closet to the overflow blocking layer.

摘要翻译： 一种半导体激光装置，包括：第一导电类型的第一包层; 设置在所述第一包层上并具有量子阱结构的有源层; 设置在溢出阻挡层上的第二导电类型的溢出阻挡层。 有源层包括杂质浓度为3×10 -3 -3 -3以上并且在溢流阻挡层和阱层之间具有30nm或更小的厚度的区域 在活动层衣柜中到溢出阻挡层。