发明授权
- 专利标题： Method of making a semiconductor device
- 专利标题（中）： 制造半导体器件的方法
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申请号： US743190申请日： 1996-11-05
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公开(公告)号： US5728630A公开(公告)日： 1998-03-17
- 发明人: Hiroyuki Nishimura , Hiroshi Adachi , Etsushi Adachi , Shigeyuki Yamamoto , Shintaro Minami , Shigeru Harada , Toru Tajima , Kimio Hagi
- 申请人： Hiroyuki Nishimura , Hiroshi Adachi , Etsushi Adachi , Shigeyuki Yamamoto , Shintaro Minami , Shigeru Harada , Toru Tajima , Kimio Hagi
- 申请人地址： JPX Tokyo
- 专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址： JPX Tokyo
- 主分类号： H01L21/3205
- IPC分类号： H01L21/3205 ; B32B27/08 ; C08G77/16 ; H01L21/312 ; H01L21/768 ; H01L23/522 ; H01L23/532 ; H01L21/31
摘要：
In a semiconductor device and a method of fabrication thereof, a resin film forms an interlayer film of the semiconductor device having a multilayer interconnection structure, and is formed by only one coating using coating liquid containing silicone ladder polymers represented by the chemical formula: (HO).sub.2 (R.sub.2 Si.sub.2 O.sub.3).sub.n H.sub.2. As a result, it is possible to improve long-term reliability of electric characteristics or the like, and simplify a process.
公开/授权文献
- US5305143A Inorganic thin film polarizer 公开/授权日：1994-04-19
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