公开(公告)号：US5728630A

公开(公告)日：1998-03-17

申请号：US743190

申请日：1996-11-05

申请人： Hiroyuki Nishimura ,  Hiroshi Adachi ,  Etsushi Adachi ,  Shigeyuki Yamamoto ,  Shintaro Minami ,  Shigeru Harada ,  Toru Tajima ,  Kimio Hagi

发明人： Hiroyuki Nishimura ,  Hiroshi Adachi ,  Etsushi Adachi ,  Shigeyuki Yamamoto ,  Shintaro Minami ,  Shigeru Harada ,  Toru Tajima ,  Kimio Hagi

IPC分类号： H01L21/3205 ,  B32B27/08 ,  C08G77/16 ,  H01L21/312 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L21/31

CPC分类号： H01L21/02137 ,  B32B27/08 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/3122 ,  H01L21/76801 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76834 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/12044

摘要： In a semiconductor device and a method of fabrication thereof, a resin film forms an interlayer film of the semiconductor device having a multilayer interconnection structure, and is formed by only one coating using coating liquid containing silicone ladder polymers represented by the chemical formula: (HO).sub.2 (R.sub.2 Si.sub.2 O.sub.3).sub.n H.sub.2. As a result, it is possible to improve long-term reliability of electric characteristics or the like, and simplify a process.

摘要翻译： 在半导体器件及其制造方法中，树脂膜形成具有多层互连结构的半导体器件的中间膜，并且仅使用包含由以下化学式表示的硅树脂聚合物的涂布液形成一个涂层：（HO ）2（R2Si2O3）nH2。 结果，可以提高电特性等的长期可靠性，并且简化工艺。

公开(公告)号：US5604380A

公开(公告)日：1997-02-18

申请号：US401804

申请日：1995-03-10

申请人： Hiroyuki Nishimura ,  Hiroshi Adachi ,  Etsushi Adachi ,  Shigeyuki Yamamoto ,  Shintaro Minami ,  Shigeru Harada ,  Toru Tajima ,  Kimio Hagi

发明人： Hiroyuki Nishimura ,  Hiroshi Adachi ,  Etsushi Adachi ,  Shigeyuki Yamamoto ,  Shintaro Minami ,  Shigeru Harada ,  Toru Tajima ,  Kimio Hagi

IPC分类号： H01L21/3205 ,  B32B27/08 ,  C08G77/16 ,  H01L21/312 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L29/41 ,  H01L29/51

CPC分类号： H01L21/02137 ,  B32B27/08 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/3122 ,  H01L21/76801 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76834 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/12044

摘要： In a semiconductor device and a method of fabrication thereof, a resin film forms an interlayer film of the semiconductor device having a multilayer interconnection structure, and is formed by only one coating using coating liquid containing silicone ladder polymers represented by the chemical formula: (HO).sub.2 (R.sub.2 Si.sub.2 O.sub.3).sub.n H.sub.2. As a result, it is possible to improve long-term reliability of electric characteristics or the like, and simplify a process.

摘要翻译： 在半导体器件及其制造方法中，树脂膜形成具有多层互连结构的半导体器件的中间膜，并且仅使用包含由以下化学式表示的硅树脂聚合物的涂布液形成一个涂层：（HO ）2（R2Si2O3）nH2。 结果，可以提高电特性等的长期可靠性，并且简化工艺。

公开(公告)号：US5889330A

公开(公告)日：1999-03-30

申请号：US987763

申请日：1997-12-09

申请人： Hiroyuki Nishimura ,  Hiroshi Adachi ,  Etsushi Adachi ,  Shigeyuki Yamamoto ,  Shintaro Minami ,  Shigeru Harada ,  Toru Tajima ,  Kimio Hagi

发明人： Hiroyuki Nishimura ,  Hiroshi Adachi ,  Etsushi Adachi ,  Shigeyuki Yamamoto ,  Shintaro Minami ,  Shigeru Harada ,  Toru Tajima ,  Kimio Hagi

IPC分类号： H01L21/312 ,  H01L21/768 ,  H01L23/532 ,  H01L29/41

CPC分类号： H01L21/02137 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/0234 ,  H01L21/02362 ,  H01L21/3122 ,  H01L21/76801 ,  H01L21/76826 ,  H01L23/5329 ,  H01L2924/0002

摘要： In a semiconductor device and a method of fabrication thereof, a resin film forms an interlayer film of the semiconductor device having a multilayer interconnection structure, and is formed by only one coating using coating liquid containing silicone ladder polymers represented by the chemical formula: (HO).sub.2 (R.sub.2 Si.sub.2 O.sub.3).sub.n H.sub.2. As a result, it is possible to improve long-term reliability of electric characteristics or the like, and simplify a process.

摘要翻译： 在半导体器件及其制造方法中，树脂膜形成具有多层互连结构的半导体器件的中间膜，并且仅使用包含由以下化学式表示的硅树脂聚合物的涂布液形成一个涂层：（HO ）2（R2Si2O3）nH2。 结果，可以提高电特性等的长期可靠性，并且简化工艺。

公开(公告)号：US5976626A

公开(公告)日：1999-11-02

申请号：US691043

申请日：1996-08-01

申请人： Junko Matsubara ,  Toru Tajima ,  Shigeru Harada

发明人： Junko Matsubara ,  Toru Tajima ,  Shigeru Harada

IPC分类号： H01L21/3205 ,  H01L21/316 ,  H01L21/768 ,  H01L23/532 ,  B05D3/04

CPC分类号： H01L21/316 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02348 ,  H01L23/5329 ,  H01L2924/0002

摘要： A method of manufacturing a semiconductor device is provided superior in planarization, crack resistance, and moisture resistance, and with no corrosion in wiring while the manufacturing cost is suppressed without increasing the number of manufacturing steps in forming an interlayer film therein. This method includes the step of forming a silicon oxide film on a substrate so as to cover a first wiring formed with a silicon oxide film therebetween. A thick-film inorganic SOG film is coated on the silicon oxide film, and then a thermal treatment is applied. Next, a silicon oxide film is formed, and a via hole is formed according to a predetermined mask. By carrying out a thermal treatment at the temperature of 150.about.550.degree. C. and at the pressure of not more than 10.sup.-3 Torr with a portion of the thick-film inorganic SOG film exposed at a side surface of the via hole, residual gas such as CO.sub.2, and H.sub.2 O adsorbed to the side surface of the via hole is released. Thus, corrosion of a wiring that is subsequently formed will be prevented to obtain a semiconductor device of high reliability.

摘要翻译： 提供了一种制造半导体器件的方法，其在平坦化，抗裂纹性和耐湿性方面优异，并且在不增加在其中形成中间膜的制造步骤数量的同时抑制制造成本的同时，不会发生布线腐蚀。 该方法包括在基板上形成氧化硅膜以覆盖其间形成有氧化硅膜的第一布线的步骤。 将厚膜无机SOG膜涂覆在氧化硅膜上，然后进行热处理。 接着，形成氧化硅膜，根据规定的掩模形成通孔。 通过在150℃的温度和不大于10-3乇的压力下进行热处理，一部分在通孔的侧面暴露的厚膜无机SOG膜，残留 释放吸附在通孔侧面的CO 2，H 2 O等的气体。 因此，可以防止随后形成的布线的腐蚀，从而获得高可靠性的半导体器件。