公开(公告)号：US5728630A

公开(公告)日：1998-03-17

申请号：US743190

申请日：1996-11-05

申请人： Hiroyuki Nishimura ,  Hiroshi Adachi ,  Etsushi Adachi ,  Shigeyuki Yamamoto ,  Shintaro Minami ,  Shigeru Harada ,  Toru Tajima ,  Kimio Hagi

发明人： Hiroyuki Nishimura ,  Hiroshi Adachi ,  Etsushi Adachi ,  Shigeyuki Yamamoto ,  Shintaro Minami ,  Shigeru Harada ,  Toru Tajima ,  Kimio Hagi

IPC分类号： H01L21/3205 ,  B32B27/08 ,  C08G77/16 ,  H01L21/312 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L21/31

CPC分类号： H01L21/02137 ,  B32B27/08 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/3122 ,  H01L21/76801 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76834 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/12044

摘要： In a semiconductor device and a method of fabrication thereof, a resin film forms an interlayer film of the semiconductor device having a multilayer interconnection structure, and is formed by only one coating using coating liquid containing silicone ladder polymers represented by the chemical formula: (HO).sub.2 (R.sub.2 Si.sub.2 O.sub.3).sub.n H.sub.2. As a result, it is possible to improve long-term reliability of electric characteristics or the like, and simplify a process.

摘要翻译： 在半导体器件及其制造方法中，树脂膜形成具有多层互连结构的半导体器件的中间膜，并且仅使用包含由以下化学式表示的硅树脂聚合物的涂布液形成一个涂层：（HO ）2（R2Si2O3）nH2。 结果，可以提高电特性等的长期可靠性，并且简化工艺。

公开(公告)号：US5604380A

公开(公告)日：1997-02-18

申请号：US401804

申请日：1995-03-10

申请人： Hiroyuki Nishimura ,  Hiroshi Adachi ,  Etsushi Adachi ,  Shigeyuki Yamamoto ,  Shintaro Minami ,  Shigeru Harada ,  Toru Tajima ,  Kimio Hagi

发明人： Hiroyuki Nishimura ,  Hiroshi Adachi ,  Etsushi Adachi ,  Shigeyuki Yamamoto ,  Shintaro Minami ,  Shigeru Harada ,  Toru Tajima ,  Kimio Hagi

IPC分类号： H01L21/3205 ,  B32B27/08 ,  C08G77/16 ,  H01L21/312 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L29/41 ,  H01L29/51

CPC分类号： H01L21/02137 ,  B32B27/08 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/3122 ,  H01L21/76801 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76834 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/12044

摘要： In a semiconductor device and a method of fabrication thereof, a resin film forms an interlayer film of the semiconductor device having a multilayer interconnection structure, and is formed by only one coating using coating liquid containing silicone ladder polymers represented by the chemical formula: (HO).sub.2 (R.sub.2 Si.sub.2 O.sub.3).sub.n H.sub.2. As a result, it is possible to improve long-term reliability of electric characteristics or the like, and simplify a process.

摘要翻译： 在半导体器件及其制造方法中，树脂膜形成具有多层互连结构的半导体器件的中间膜，并且仅使用包含由以下化学式表示的硅树脂聚合物的涂布液形成一个涂层：（HO ）2（R2Si2O3）nH2。 结果，可以提高电特性等的长期可靠性，并且简化工艺。

公开(公告)号：US5889330A

公开(公告)日：1999-03-30

申请号：US987763

申请日：1997-12-09

申请人： Hiroyuki Nishimura ,  Hiroshi Adachi ,  Etsushi Adachi ,  Shigeyuki Yamamoto ,  Shintaro Minami ,  Shigeru Harada ,  Toru Tajima ,  Kimio Hagi

发明人： Hiroyuki Nishimura ,  Hiroshi Adachi ,  Etsushi Adachi ,  Shigeyuki Yamamoto ,  Shintaro Minami ,  Shigeru Harada ,  Toru Tajima ,  Kimio Hagi

IPC分类号： H01L21/312 ,  H01L21/768 ,  H01L23/532 ,  H01L29/41

CPC分类号： H01L21/02137 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/0234 ,  H01L21/02362 ,  H01L21/3122 ,  H01L21/76801 ,  H01L21/76826 ,  H01L23/5329 ,  H01L2924/0002

摘要： In a semiconductor device and a method of fabrication thereof, a resin film forms an interlayer film of the semiconductor device having a multilayer interconnection structure, and is formed by only one coating using coating liquid containing silicone ladder polymers represented by the chemical formula: (HO).sub.2 (R.sub.2 Si.sub.2 O.sub.3).sub.n H.sub.2. As a result, it is possible to improve long-term reliability of electric characteristics or the like, and simplify a process.

摘要翻译： 在半导体器件及其制造方法中，树脂膜形成具有多层互连结构的半导体器件的中间膜，并且仅使用包含由以下化学式表示的硅树脂聚合物的涂布液形成一个涂层：（HO ）2（R2Si2O3）nH2。 结果，可以提高电特性等的长期可靠性，并且简化工艺。

公开(公告)号：US5306947A

公开(公告)日：1994-04-26

申请号：US2398

申请日：1993-01-13

申请人： Hiroshi Adachi ,  Hirozoh Kanegae ,  Hiroshi Mochizuki ,  Masanori Obata ,  Takemi Endoh ,  Kimio Hagi ,  Shigeru Harada ,  Kazuhito Matsukawa ,  Akira Ohhisa ,  Etsushi Adachi

发明人： Hiroshi Adachi ,  Hirozoh Kanegae ,  Hiroshi Mochizuki ,  Masanori Obata ,  Takemi Endoh ,  Kimio Hagi ,  Shigeru Harada ,  Kazuhito Matsukawa ,  Akira Ohhisa ,  Etsushi Adachi

IPC分类号： H01L21/3205 ,  H01L21/3105 ,  H01L21/312 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L23/48 ,  H01L29/46 ,  H01L29/54 ,  H01L29/62

CPC分类号： H01L21/02137 ,  H01L21/02282 ,  H01L21/3105 ,  H01L21/31055 ,  H01L21/31058 ,  H01L21/3122 ,  H01L21/76819 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002

摘要： The present invention is mainly characterized by providing an even surface of an interlayer insulating film for insulating and isolating an upper interconnection and a lower interconnection from each other. A lower interconnection layer is provided on a semiconductor substrate, having a pattern of stepped portions. A silicon type insulating film is provided on the semiconductor substrate so as to cover the lower interconnection layer. A silicon ladder resin film is filled in recessed portions of the surface of the silicon type insulating film for making even the surface of the silicon type insulating film. An upper interconnection layer electrically connected to the lower interconnection layer through a via hole is provided on the silicon type insulating film. The silicon ladder resin film has the structural formula: ##STR1## where R.sub.1 is at least one of a phenyl group and a lower alkyl group, R.sub.2 is at least one of a hydrogen atom and a lower alkyl group, and n is an integer of 20 to 1000.

摘要翻译： 本发明的主要特征在于，提供用于使上部互连和下部互连彼此绝缘和隔离的层间绝缘膜的均匀表面。 下部布线层设置在半导体基板上，具有台阶部分的图案。 在半导体衬底上设置硅绝缘膜，以覆盖下互连层。 硅梯型树脂膜填充在硅型绝缘膜的表面的凹部中，以使硅型绝缘膜的表面均匀。 通过通孔电连接到下互连层的上互连层设置在硅型绝缘膜上。 硅梯树脂膜具有结构式：（*化学结构*）其中R 1为苯基和低级烷基中的至少一个，R 2为氢原子和低级烷基中的至少一个，n为 整数为20〜1000。

公开(公告)号：US5565378A

公开(公告)日：1996-10-15

申请号：US997833

申请日：1992-12-29

申请人： Shigeru Harada ,  Kimio Hagi ,  Kiyoaki Tsumura

发明人： Shigeru Harada ,  Kimio Hagi ,  Kiyoaki Tsumura

IPC分类号： H01L21/321 ,  H01L21/60 ,  H01L23/485 ,  H01L21/228

CPC分类号： H01L24/12 ,  H01L21/321 ,  H01L24/05 ,  H01L24/11 ,  H01L24/48 ,  H01L2224/02166 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05166 ,  H01L2224/05187 ,  H01L2224/05623 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/0567 ,  H01L2224/05671 ,  H01L2224/05681 ,  H01L2224/13099 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48463 ,  H01L2224/48465 ,  H01L2224/85201 ,  H01L2224/85205 ,  H01L2224/85375 ,  H01L2224/8592 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01021 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/0105 ,  H01L2924/01067 ,  H01L2924/01068 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/05042 ,  H01L2924/1305 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043

摘要： A passive state film is formed on a surface of a bonding pad as follows: A silicon substrate 71 is immersed in solution continuously supplied with ozone. Since ozone is continuously supplied, it is possible to maintain the concentration of the dissolved ozone in the solution above a predetermined concentration. Therefore, it is possible to make the speed of formation of the passive state film higher than the speed of fusion of aluminum, which is a main constituent of the bonding pad. Accordingly, it is possible to form a passive state film with no pinholes.

摘要翻译： 在接合焊盘的表面上如下形成被动态膜：将硅衬底71浸入连续供给臭氧的溶液中。 由于连续供给臭氧，所以可以将溶解的臭氧浓度保持在规定浓度以上。 因此，可以使被动状态膜的形成速度高于作为接合焊盘的主要成分的铝的熔融速度。 因此，可以形成没有针孔的被动状态膜。

公开(公告)号：US5480836A

公开(公告)日：1996-01-02

申请号：US254085

申请日：1994-06-03

申请人： Shigeru Harada ,  Kazuhiro Ishimaru ,  Kimio Hagi

发明人： Shigeru Harada ,  Kazuhiro Ishimaru ,  Kimio Hagi

IPC分类号： H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L21/44 ,  H01L21/48

CPC分类号： H01L21/76858 ,  H01L21/76805 ,  H01L21/76841 ,  H01L21/76843 ,  H01L21/76886 ,  H01L23/5226 ,  H01L23/53223 ,  H01L2924/0002

摘要： A semiconductor integrated circuit device has an interconnection structure in which multilayer aluminum interconnection layers are connected through connection holes. A first aluminum interconnection layer is formed on a main surface of the semiconductor substrate. The first aluminum interconnection layer has a surface layer which includes any of high melting point metal, high melting point metal compound, high melting point metal silicide, or amorphous silicon. An insulating layer is formed on the first aluminum interconnection layer, and has a through hole if formed extending to a surface of the first aluminum interconnection layer. A second aluminum interconnection layer is formed on the insulating layer and is electrically connected to the surface layer of the first aluminum interconnection layer through the through hole. The second aluminum interconnection layer includes a titanium layer, a titanium nitride layer and an aluminum alloy layer. The titanium layer is formed on the insulating layer to be in contact with the surface of the first aluminum interconnection layer through the through hole. The titanium nitride layer is formed on the titanium layer. The aluminum alloy layer is formed on the titanium nitride layer. An electrical contact resistance between the first and second aluminum interconnection layers is stabilized, and resistance against the electron-migration and stress-migration is improved in the interconnection structure.

摘要翻译： 半导体集成电路器件具有通过连接孔连接多层铝互连层的互连结构。 第一铝互连层形成在半导体衬底的主表面上。 第一铝互连层具有包括高熔点金属，高熔点金属化合物，高熔点金属硅化物或非晶硅中的任何一种的表面层。 绝缘层形成在第一铝互连层上，并且如果形成为延伸到第一铝互连层的表面的通孔。 第二铝互连层形成在绝缘层上，并通过通孔与第一铝互连层的表面层电连接。 第二铝互连层包括钛层，氮化钛层和铝合金层。 在绝缘层上形成钛层，以通过贯通孔与第一铝互连层的表面接触。 在钛层上形成氮化钛层。 在氮化钛层上形成铝合金层。 第一和第二铝互连层之间的电接触电阻是稳定的，并且互连结构中电子迁移和应力迁移的抵抗力得到改善。

公开(公告)号：US5341026A

公开(公告)日：1994-08-23

申请号：US842019

申请日：1992-02-26

申请人： Shigeru Harada ,  Kazuhiro Ishimaru ,  Kimio Hagi

发明人： Shigeru Harada ,  Kazuhiro Ishimaru ,  Kimio Hagi

IPC分类号： H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L23/48 ,  H01L29/46 ,  H01L29/54 ,  H01L29/62

CPC分类号： H01L21/76858 ,  H01L21/76805 ,  H01L21/76841 ,  H01L21/76843 ,  H01L21/76886 ,  H01L23/5226 ,  H01L23/53223 ,  H01L2924/0002

摘要： A semiconductor integrated circuit device has an interconnection structure in which multilayer aluminum interconnection layers are connected through connection holes. A first aluminum interconnection layer is formed on a main surface of the semiconductor substrate. The first aluminum interconnection layer has a surface layer which includes any of high melting point metal, high melting point metal compound, high melting point metal silicide, or amorphous silicon. An insulating layer is formed on the first aluminum interconnection layer, and has a through hole if formed extending to a surface of the first aluminum interconnection layer. A second aluminum interconnection layer is formed on the insulating layer and is electrically connected to the surface layer of the first aluminum interconnection layer through the through hole. The second aluminum interconnection layer includes a titanium layer, a titanium nitride layer and an aluminum alloy layer. The titanium layer is formed on the insulating layer to be in contact with the surface of the first aluminum interconnection layer through the through hole. The titanium nitride layer is formed on the titanium layer. The aluminum alloy layer is formed on the titanium nitride layer. An electrical contact resistance between the first and second aluminum interconnection layers is stabilized, and resistance against the electron-migration and stress-migration is improved in the interconnection structure.

摘要翻译： 半导体集成电路器件具有通过连接孔连接多层铝互连层的互连结构。 第一铝互连层形成在半导体衬底的主表面上。 第一铝互连层具有包括高熔点金属，高熔点金属化合物，高熔点金属硅化物或非晶硅中的任何一种的表面层。 绝缘层形成在第一铝互连层上，并且如果形成为延伸到第一铝互连层的表面的通孔。 第二铝互连层形成在绝缘层上，并通过通孔与第一铝互连层的表面层电连接。 第二铝互连层包括钛层，氮化钛层和铝合金层。 在绝缘层上形成钛层，以通过贯通孔与第一铝互连层的表面接触。 在钛层上形成氮化钛层。 在氮化钛层上形成铝合金层。 第一和第二铝互连层之间的电接触电阻是稳定的，并且互连结构中电子迁移和应力迁移的抵抗力得到改善。

公开(公告)号：US06778377B2

公开(公告)日：2004-08-17

申请号：US09732891

申请日：2000-12-11

申请人： Kimio Hagi

发明人： Kimio Hagi

IPC分类号： H01T2300

CPC分类号： H01L21/67248 ,  B23Q3/154 ,  H01L21/6833 ,  H02N13/00

摘要： A voltage is applied to an electrode of an electrostatic chuck for chucking a semiconductor substrate, and the application voltage is controlled stepwise by means of a voltage control section. In the electrostatic chucking system, a temperature sensor may be provided for detecting the temperature of the semiconductor substrate held by the electrostatic chuck, wherein a signal output from the temperature sensor is input to the voltage control section to thereby control the applied voltage.

摘要翻译： 电压被施加到用于夹持半导体衬底的静电吸盘的电极，并且施加电压通过电压控制部分逐步控制。 在静电吸盘系统中，可以设置温度传感器，用于检测由静电卡盘保持的半导体衬底的温度，其中从温度传感器输出的信号被输入到电压控制部分，从而控制施加的电压。

公开(公告)号：US06414395B1

公开(公告)日：2002-07-02

申请号：US09398475

申请日：1999-09-17

申请人： Yuuko Ookuma ,  Kimio Hagi

发明人： Yuuko Ookuma ,  Kimio Hagi

IPC分类号： H01L2348

CPC分类号： H01L21/76805 ,  H01L21/76804 ,  H01L21/76831

摘要： A through hole passes through an interlayer isolation film and an antireflection film, to partially expose a surface of a first wiring layer. A clearance filling member fills up a clearance under an inner edge of the antireflection film. A barrier metal film continuously covers the exposed surface of the first wiring layer, an inner wall surface of the through hole and a surface of the interlayer isolation film. Passing through the through hole, a second wiring layer is connected with the first wiring layer through the barrier metal film. Thus provided is a method of fabricating a semiconductor device improved to be capable of avoiding disconnection of a wire in a through hole.

摘要翻译： 通孔穿过层间隔离膜和抗反射膜，以部分地暴露第一布线层的表面。 间隙填充构件在防反射膜的内缘下方填充间隙。 阻挡金属膜连续地覆盖第一布线层的露出表面，通孔的内壁表面和层间隔离膜的表面。 通过通孔，第二布线层通过阻挡金属膜与第一布线层连接。 因此，提供了一种制造半导体器件的方法，该半导体器件被改进以能够避免导线在通孔中断开。

公开(公告)号：US5859478A

公开(公告)日：1999-01-12

申请号：US797447

申请日：1997-02-06

申请人： Kimio Hagi

发明人： Kimio Hagi

IPC分类号： G03F7/20 ,  H01L21/027 ,  H01L23/544

CPC分类号： H01L23/544 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2924/0002

摘要： In a semiconductor device having alignment marks formed on a semiconductor substrate, the alignment marks include a main convex or concave alignment mark formed on said semiconductor substrate; and a plurality of minute alignment marks formed on the periphery of the main alignment mark. In areas where the minute alignment marks are formed, even when a film of aluminum or its alloy is stacked on the semiconductor substrate by high temperature sputtering, grains will not grow so as to have a large diameter. Thus, the grains created on the periphery of the main alignment mark are not erroneously recognized as the main alignment mark, thereby realizing accurate alignment.

摘要翻译： 在具有形成在半导体衬底上的对准标记的半导体器件中，对准标记包括形成在所述半导体衬底上的主凸起或凹形对准标记; 以及形成在主对准标记的周边上的多个微小对准标记。 在形成微小对准标记的区域中，即使通过高温溅射在半导体衬底上层叠铝或其合金膜，晶粒也不会生长，从而具有大的直径。 因此，在主对准标记的周围产生的晶粒不被错误地识别为主对准标记，从而实现精确的对准。