Invention Grant
- Patent Title: Structure for controlling threshold voltage of MOSFET
- Patent Title (中): 控制MOSFET阈值电压的结构
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Application No.: US664440Application Date: 1996-06-18
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Publication No.: US5793088APublication Date: 1998-08-11
- Inventor: Jeong Yeol Choi , Chung-Jen Chien , Chung Chyung Han , Chuen-Der Lien
- Applicant: Jeong Yeol Choi , Chung-Jen Chien , Chung Chyung Han , Chuen-Der Lien
- Applicant Address: CA Santa Clara
- Assignee: Integrated Device Technology, Inc.
- Current Assignee: Integrated Device Technology, Inc.
- Current Assignee Address: CA Santa Clara
- Main IPC: H01L21/266
- IPC: H01L21/266 ; H01L21/336 ; H01L21/8238 ; H01L27/092 ; H01L29/10 ; H01L29/76 ; H01L29/94 ; H01L31/062 ; H01L31/113
Abstract:
A method and structure for controlling the threshold voltage of a MOSFET is provided. The method compensates for the edge effect associated with prior art halo implants by providing an edge threshold voltage implant (the VT implant) which passes impurities through dielectric spacers, through the underlying source/drain regions and into the edges of the halo regions which lie in the channel. The VT implant reduces junction capacitance and does not degrade punchthrough voltage.
Public/Granted literature
- US5192507A Receptor-based biosensors Public/Granted day:1993-03-09
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