发明授权
US5841611A Magnetoresistance effect device and magnetoresistance effect type head, memory device, and amplifying device using the same 失效
磁阻效应器件和磁阻效应型头,存储器件和使用其的放大器件

Magnetoresistance effect device and magnetoresistance effect type head,
memory device, and amplifying device using the same
摘要:
A magnetoresistance effect device of the invention includes: a substrate; and a multilayer structure formed on the substrate. The multilayer structure includes a hard magnetic film, a soft magnetic film, and a non-magnetic metal film for separating the hard magnetic film from the soft magnetic film. The magnetization curve of the hard magnetic film has a good square feature, and the direction of a magnetization easy axis of the hard magnetic film substantially agrees to the direction of a magnetic field to be detected.
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