发明授权
US5883828A Low imprint ferroelectric material for long retention memory and method
of making the same
失效
用于长保留记忆的低压刻铁电材料和制造相同的方法
- 专利标题： Low imprint ferroelectric material for long retention memory and method of making the same
- 专利标题（中）： 用于长保留记忆的低压刻铁电材料和制造相同的方法
-
申请号： US19849申请日： 1998-02-06
-
公开(公告)号： US5883828A公开(公告)日： 1999-03-16
- 发明人: Joseph D. Cuchiaro , Narayan Solayappan , Carlos A. Paz de Araujo , Larry D. McMillan
- 申请人： Joseph D. Cuchiaro , Narayan Solayappan , Carlos A. Paz de Araujo , Larry D. McMillan
- 申请人地址： CO Colorado Springs
- 专利权人： Symetrix Corporation
- 当前专利权人： Symetrix Corporation
- 当前专利权人地址： CO Colorado Springs
- 主分类号： C01G35/00
- IPC分类号： C01G35/00 ; G11C11/56 ; H01L21/316 ; H01L21/8242 ; H01L21/8246 ; H01L27/10 ; H01L27/105 ; H01L27/108 ; H01L27/115 ; H01L29/92 ; G11C11/22
摘要：
Thin film ferroelectric materials for use in integrated memory circuits, such as FERAMS and the like, contain strontium bismuth niobium tantalate having an empirical formula SrBi.sub.2+E (Nb.sub.X Ta.sub.2-X)O.sub.9+3E/2, wherein E is a number representing an excess amount of bismuth ranging from zero to 2; and X is a number representing an excess amount of niobium ranging from 0.01 to 0.9. The thin films demonstrate an exceptional resistance to polarization imprinting when challenged with unidirectional voltage pulses.
公开/授权文献
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