发明授权
- 专利标题： Method of reducing loading variation during etch processing
- 专利标题（中）： 减少蚀刻加工过程中负荷变化的方法
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申请号： US884862申请日： 1997-06-30
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公开(公告)号： US5899706A公开(公告)日： 1999-05-04
- 发明人: Andreas Kluwe , Lars Liebmann , Frank Prein , Thomas Zell
- 申请人： Andreas Kluwe , Lars Liebmann , Frank Prein , Thomas Zell
- 申请人地址： DEX Munich NY Armonk
- 专利权人： Siemens Aktiengesellschaft,International Business Machines Corporation
- 当前专利权人： Siemens Aktiengesellschaft,International Business Machines Corporation
- 当前专利权人地址： DEX Munich NY Armonk
- 主分类号： H01L21/82
- IPC分类号： H01L21/82 ; H01L21/8242 ; H01L23/528 ; H01L27/108
摘要：
In preparation for etch processing a semiconductor chip having areas of little or no pattern and areas that are heavily patterned, adding non-operative patterns to the areas having little or no pattern so that the overall pattern density is about the same across the chip.
公开/授权文献
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