- 专利标题： Process for fabricating an integrated circuit with a self-aligned contact
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申请号： US49517申请日： 1998-03-27
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公开(公告)号： US5907781A公开(公告)日： 1999-05-25
- 发明人: Hung-Sheng Chen , Unsoon Kim , Yu Sun , Chi Chang , Mark Ramsbey , Mark Randolph , Tatsuya Kajita , Angela Hui , Fei Wang , Mark Chang
- 申请人： Hung-Sheng Chen , Unsoon Kim , Yu Sun , Chi Chang , Mark Ramsbey , Mark Randolph , Tatsuya Kajita , Angela Hui , Fei Wang , Mark Chang
- 申请人地址： CA Sunnyvale JPX Kanagawa JPX Fukushima
- 专利权人： Advanced Micro Devices, Inc.,Fujitsu Limited,Fujitsu AMD Semiconductor Limited
- 当前专利权人： Advanced Micro Devices, Inc.,Fujitsu Limited,Fujitsu AMD Semiconductor Limited
- 当前专利权人地址： CA Sunnyvale JPX Kanagawa JPX Fukushima
- 主分类号： H01L21/60
- IPC分类号： H01L21/60 ; H01L21/768 ; H01L21/8247 ; H01L27/115 ; H01L21/335
摘要：
A method of forming a contact in a flash memory device utilizes a local interconnect process technique. The local interconnect process technique allows the contact to butt against or overlap a stacked gate associated with the memory cell. The contact can include tungsten. The stacked gate is covered by a barrier layer which also covers the insulative spacers.