发明授权
- 专利标题: Light-emitting-diode array and light-emitting-diode element
- 专利标题(中): 发光二极管阵列和发光二极管元件
-
申请号: US924832申请日: 1997-09-05
-
公开(公告)号: US5917227A公开(公告)日: 1999-06-29
- 发明人: Mitsuhiko Ogihara , Yukio Nakamura , Masumi Taninaka , Hiroshi Hamano
- 申请人: Mitsuhiko Ogihara , Yukio Nakamura , Masumi Taninaka , Hiroshi Hamano
- 申请人地址: JPX Tokyo
- 专利权人: Oki Electric Industry Co., Ltd.
- 当前专利权人: Oki Electric Industry Co., Ltd.
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX8-285528 19961028
- 主分类号: H01L27/15
- IPC分类号: H01L27/15 ; H01L31/10 ; H01L33/08 ; H01L33/12 ; H01L33/30 ; H01L33/34 ; H01L33/38 ; H01L27/14
摘要:
A light-emitting-diode array includes a non-doped compound semiconductor layer between a substrate and a first compound semiconductor layer. A plurality of isolation regions extend from the first compound semiconductor layer to the surface of the non-doped compound semiconductor layer, and provide separation into isolated block regions each containing an equal number of diffusion regions. A plurality of shared electrode lines are connected to the diffusion regions in a plurality of the block regions, in such a relationship that diffusion regions selected from each of the block regions are connected to a common shared electrode. At least a surface portion of the substrate is formed of silicon. The density of the diffusion regions can be increased without increasing the number of the electrode pads. Moreover, the substrate is free from breakage or cracks.
公开/授权文献
- US5311760A Method and apparatus for corner bead angle enlargement 公开/授权日:1994-05-17
信息查询
IPC分类: