发明授权
US5933726A Method of forming a semiconductor device have a screen stacked cell
capacitor
失效
形成半导体器件的方法具有屏幕堆叠单元电容器
- 专利标题： Method of forming a semiconductor device have a screen stacked cell capacitor
- 专利标题（中）： 形成半导体器件的方法具有屏幕堆叠单元电容器
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申请号： US709203申请日： 1996-08-27
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公开(公告)号： US5933726A公开(公告)日： 1999-08-03
- 发明人: Michio Nishimura , Kazuhiko Saitoh , Masayuki Yasuda , Takashi Hayakawa , Michio Tanaka , Yuji Ezaki , Katsuo Yuhara , Minoru Ohtsuka , Toshikazu Kumai , Songsu Cho , Toshiyuki Kaeriyama , Keizo Kawakita , Toshihiro Sekiguchi , Yoshitaka Tadaki , Jun Murata , Hideo Aoki , Akihiko Konno , Kiyomi Katsuyama , Takafumi Tokunaga , Yoshimi Torii
- 申请人： Michio Nishimura , Kazuhiko Saitoh , Masayuki Yasuda , Takashi Hayakawa , Michio Tanaka , Yuji Ezaki , Katsuo Yuhara , Minoru Ohtsuka , Toshikazu Kumai , Songsu Cho , Toshiyuki Kaeriyama , Keizo Kawakita , Toshihiro Sekiguchi , Yoshitaka Tadaki , Jun Murata , Hideo Aoki , Akihiko Konno , Kiyomi Katsuyama , Takafumi Tokunaga , Yoshimi Torii
- 申请人地址： TX Dallas
- 专利权人： Texas Instruments Incorporated
- 当前专利权人： Texas Instruments Incorporated
- 当前专利权人地址： TX Dallas
- 优先权： JPX7-248499 19950901
- 主分类号： H01L27/04
- IPC分类号： H01L27/04 ; H01L21/822 ; H01L21/8242 ; H01L27/108
摘要：
A semiconductor device, such as a dynamic RAM, and method of making it. A number of stacked cell capacitors are placed at a prescribed spacing in an alignment direction on top of a p.sup.- -type silicon substrate (1). Each capacitor has a nearly perpendicular cylindrical lower electrode (cylindrical polysilicon layer (96)), a dielectric film (silicon nitride film (77)), and upper electrode (plate electrode (78) made of polysilicon). The spacing in the alignment direction is smaller than the inner diameter of the lower electrode.
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