发明授权
- 专利标题： Method of prevention of degradation of low dielectric constant gap-fill material
- 专利标题（中）： 防止低介电常数间隙填充材料退化的方法
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申请号： US993119申请日： 1997-12-18
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公开(公告)号： US6043147A公开(公告)日： 2000-03-28
- 发明人: Robert C. Chen , Jeffrey A. Shields , Robert Dawson , Khanh Tran
- 申请人： Robert C. Chen , Jeffrey A. Shields , Robert Dawson , Khanh Tran
- 申请人地址： CA Sunnyvale
- 专利权人： Advanced Micro Devices, Inc.
- 当前专利权人： Advanced Micro Devices, Inc.
- 当前专利权人地址： CA Sunnyvale
- 主分类号： C23C16/40
- IPC分类号： C23C16/40 ; C23C16/56 ; H01L21/3105 ; H01L21/312 ; H01L21/768 ; H01L21/316
摘要：
Patterned metal layers are gap filled with HSQ and passivated to stabilize the dielectric constant of the HSQ substantially at the as-deposited value prior to oxide deposition by PECVD and planarization. Passivation and stabilization are effected by treating the as--deposited HSQ layer in a silane (SiH.sub.4) containing plasma.
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