发明授权
- 专利标题： Method of forming a semiconductor memory device
- 专利标题（中）： 形成半导体存储器件的方法
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申请号： US33912申请日： 1998-03-03
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公开(公告)号： US6100201A公开(公告)日： 2000-08-08
- 发明人: Yukihiko Maejima , Jun Kawahara , Shinobu Saitoh , Yoshihiro Hayashi
- 申请人： Yukihiko Maejima , Jun Kawahara , Shinobu Saitoh , Yoshihiro Hayashi
- 申请人地址： JPX Tokyo
- 专利权人： NEC Corporation
- 当前专利权人： NEC Corporation
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX9-049526 19970305
- 主分类号： H01L21/8247
- IPC分类号： H01L21/8247 ; H01L21/02 ; H01L21/302 ; H01L21/3065 ; H01L21/3105 ; H01L21/311 ; H01L21/822 ; H01L21/8242 ; H01L21/8246 ; H01L27/04 ; H01L27/10 ; H01L27/105 ; H01L27/108 ; H01L29/788 ; H01L29/792 ; H01L21/461
摘要：
A method of forming a capacitor by forming a dielectric layer over a bottom electrode layer, forming a top electrode layer over the dielectric layer to form laminations of the bottom electrode layer, the dielectric layer and the top electrode layer, and selectively etching the laminations to form a capacitor, the dielectric layer being etched by a reactive ion etching so that the dielectric layer of the capacitor receives no substantive damage in the etching process.
公开/授权文献
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