发明授权
- 专利标题： High dielectric constant thin film structure, method for forming high dielectric constant thin film, and apparatus for forming high dielectric constant thin film
- 专利标题（中）： 高介电常数薄膜结构，形成高介电常数薄膜的方法，以及形成高介电常数薄膜的装置
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申请号： US928083申请日： 1997-09-12
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公开(公告)号： US6101085A公开(公告)日： 2000-08-08
- 发明人: Takaaki Kawahara , Mikio Yamamuka , Tetsuro Makita , Tsuyoshi Horikawa , Akimasa Yuuki , Teruo Shibano
- 申请人： Takaaki Kawahara , Mikio Yamamuka , Tetsuro Makita , Tsuyoshi Horikawa , Akimasa Yuuki , Teruo Shibano
- 申请人地址： JPX Tokyo
- 专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX8-025245 19960213
- 主分类号： C23C16/40
- IPC分类号： C23C16/40 ; C23C16/44 ; C23C16/448 ; C23C16/52 ; C23C16/56 ; H01L21/02 ; H01L21/314 ; H01L21/316 ; H01L21/822 ; H01L21/8242 ; H01L27/04 ; H01L27/108 ; H01G4/06 ; H01G4/232
摘要：
There is provided a (Ba, Sr) TiO.sub.3 film of higher dielectric constant and less leakage current for serving as a dielectric thin film of a capacitor in a semiconductor memory. DPM (dipivaloylmethanato) compounds of Ba, Sr and Ti are dissolved in THF (tetrahydrofuran) to obtain Ba(DPM).sub.2 /THF, Sr(DPM).sub.2 /THF and TiO(DPM).sub.2 /THF solutions which are used as source material solutions. A (Ba, Sr) TiO.sub.3 film is formed by a CVD method while increasing a relative percentage of a Ti source material flow rate to a sum of Ba source material flow rate and Sr source material flow rate. The film formation is carried out in multiple steps, and annealing is applied in each step after deposition of the film.
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